SCH1430 Power MOSFET 20V, 125mΩ, 2A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features • Low On-Resistance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) www.onsemi.com VDSS RDS(on) Max 125mΩ@ 4.5V ID Max 20V 190mΩ@ 2.5V 2A 310mΩ@ 1.8V ELECTRICAL CONNECTION N-Channel Typical Applications • Load Switch 1, 2, 5, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 2 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 8 A Power Dissipation When mounted on ceramic substrate 2 (900mm × 0.8mm) PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (900mm × 0.8mm) Symbol RθJA © Semiconductor Components Industries, LLC, 2015 August 2015 - Rev. 2 Value 156.2 1 Unit 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 3 4 PACKING TYPE : TL MARKING ZF LOT No. VDSS LOT No. Drain to Source Voltage TL ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : SCH1430/D SCH1430 ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Conditions Value min ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V 20 VDS=10V, ID=1mA 0.4 VDS=10V, ID=1A typ max Unit V 1 μA ±10 μA 1.3 V 1.9 S RDS(on)1 RDS(on)2 ID=1A, VGS=4.5V 93 125 mΩ ID=0.5A, VGS=2.5V 135 190 mΩ RDS(on)3 Ciss ID=0.3A, VGS=1.8V 200 310 mΩ Output Capacitance Coss VDS=10V, f=1MHz 28 pF Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time td(on) 5.1 ns Rise Time tr 11 ns Turn-OFF Delay Time td(off) Fall Time tf Static Drain to Source On-State Resistance Input Capacitance Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd 128 See specified Test Circuit VDS=10V, VGS=4.5V, ID=2A pF 14.5 ns 12 ns 1.8 nC 0.3 nC 0.55 nC VSD Forward Diode Voltage IS=2A, VGS=0V 0.85 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω S SCH1430 www.onsemi.com 2 SCH1430 www.onsemi.com 3 SCH1430 www.onsemi.com 4 SCH1430 PACKAGE DIMENSIONS unit : mm SOT-563 / SCH6 CASE 463AB ISSUE O 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 1.4 0.4 0.3 0.5 0.5 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) ZF SOT-563 / SCH6 (Pb-Free / Halogen Free) 5,000 / Tape & Reel SCH1430-TL-H SCH1430-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the SCH1430 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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