Ordering number : ENA1074A 2SC5245A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features • • • • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : ⏐S21e⏐2=5.5dB typ (f=1.5GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO 20 V 10 V VEBO IC 1.5 V 30 mA PC Tj 150 mW Junction Temperature Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7023A-009 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 2SC5245A-4-TL-E 0.2 0.15 3 0.9 Packing Type: TL 1.25 0 to 0.08 Marking LOT No. MN 1 2 0.65 R A N K LOT No. TL 0.3 Electrical Connection 0.3 0.425 2.1 0.425 2.0 1 : Base 2 : Emitter 3 : Collector MCP 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 71812 TKIM/O2908AB MSIM TC-00001685 No. A1074-1/8 2SC5245A Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO VCB=10V, IE=0A VEB=1V, IC=0A hFE fT1 VCE=5V, IC=10mA VCE=5V, IC=10mA fT2 VCE=1V, IC=1mA Output Capacitance Cob Reverse Transfer Capacitance Cre Forward Transfer Gain Noise Figure Ratings Conditions min typ Unit max 60* 1.0 μA 10 μA 270* 5 8 GHz 3.5 GHz 0.45 VCB=10V, f=1MHz 0.7 pF 0.30 pF 10 dB 2 ⏐S21e⏐ 1 VCE=5V, IC=10mA, f=1.5GHz 2 ⏐S21e⏐ 2 VCE=1V, IC=1mA, f=1.5GHz 5.5 NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 NF2 VCE=2V, IC=3mA, f=1GHz 0.9 8 dB 3.0 dB dB * : The 2SC5245A is classified by 10mA hFE as follows : Rank hFE 3 60 to 120 4 90 to 180 5 135 to 270 Ordering Information Device Package Shipping memo MCP 3,000pcs./reel Pb Free 2SC5245A-4-TL-E hFE -- IC 5 Gain-Bandwidth Product, fT -- GHz 3 DC Current Gain, hFE 2 100 7 5 3 2 10 fT -- IC 2 VCE=5V 10 =5V VCE =1V VCE 7 5 3 2 7 5 0.1 1.0 2 3 5 7 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 7 100 ITR07984 1.0 2 3 5 7 10 Collector Current, IC -- mA 2 3 5 IT14098 No. A1074-2/8 2SC5245A Cob -- VCB 5 Reverse Transfer Capacitance, Cre -- pF Output Capacitance, Cre -- pF 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 5 3 2 7 1.0 5 3 2 7 10 3 2 Collector-to-Base Voltage, VCB -- V f=1MHz 3 2 1.0 7 5 3 2 0.1 7 5 5 7 0.1 5 3 2 7 1.0 5 3 2 7 10 VCE=2V f=1GHz 10 Noise Figure, NF -- dB 10 8 1V VC E=5V 6 4 V CE = Noise Figure, NF -- dB 5 ITR07987 NF -- IC 12 f=1.5GHz 2 8 6 4 2 0 0.1 2 3 5 7 1.0 2 3 7 10 5 2 Collector Current, IC -- mA ⏐S21e⏐2 -- I 3 0 1.0 5 2 3 5 7 1.0 2 3 5 7 2 10 Collector Current, IC -- mA ⏐S21e⏐2 -- I ITR07990 C 16 f=1GHz Forward Transfer Gain,⏐S21e⏐2 -- dB 2V 1V 8 6 4 2 12 2V 1V =5V V CE 10 14 =5V VCE 12 5 C 16 14 3 ITR07991 f=1.5GHz Forward Transfer Gain,⏐S21e⏐2 -- dB 3 2 Collector-to-Base Voltage, VCB -- V ITR07986 NF -- IC 12 Cre -- VCB 5 f=1MHz 10 8 6 4 2 0 0 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 ITR07988 PC -- Ta 160 3 5 7 1.0 2 3 5 7 10 2 Collector Current, IC -- mA 3 5 7 100 ITR07989 Collector Dissipation, PC -- mW 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR07992 No. A1074-3/8 2SC5245A S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) 90° j50 j100 VC = E 5 IC =10 V mA j150 j200 j250 j10 0.2 G 0.2 Hz GH z --j10 25 2.0GHz 50 100 150 250 .0 2 GHz z VCE=5V 2.0GH IC=5mA 0.2GHz z --j250 H 0.2G Hz G --j200 2.0 V C --j150 IC E =1 =1 V 2V mA V CE= --j100 A --j25 I C=3m 10 V =5 A E V C =10m IC 0 60° 120° j25 150° 0.2GHz VCE=5V IC=5mA 0.2GHz 2.0GHz 2.0GHz V 2 = 0.2GHz 2.0GHz V CE A 8 2.0GHz 4 ±180° I C=3m =1V V CE 0.2GHz A m 1 I C= 16 20 0 --30° --60° --120° --90° ITR07993 ITR07994 S22e f=200MHz to 2000MHz(200MHz Step) 90° j50 60° 120° 2.0GHz 2.0GHz VCE=5V 2.0GHz IC=5mA 2.0GHz VCE=5V 30° IC=10mA VCE=2V VCE=1V 0.2GHz 0.2GHz IC=3mA IC=1mA 0.2GHz 0.2GHz 150° 12 --150° --j50 S12e f=200MHz to 2000MHz(200MHz Step) 30° 0.04 0.08 0.12 0.16 0.2 ±180° 0 j25 j150 j200 j250 j10 0 10 --j10 --30° --150° j100 --j25 25 150 250 CE=5V IC=10mA 0.2GHz 0.2GHz 0.2GHz 0.2GHz 2.0GHz z 2.0GH --j250 --j200 2.0GHz z =1V 2.0GH VCE mA --j150 1 VCE=5V V =2V I C= CE --j100 IC=5mA I =3mA C 50 100 V --60° --120° --90° ITR07995 --j50 ITR07996 No. A1074-4/8 2SC5245A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.763 0.590 0.456 0.374 0.323 0.288 0.264 0.248 0.239 0.235 ∠S11 -37.5 -65.4 -85.5 -102.0 -115.0 -127.5 -137.7 -147.4 -156.9 -165.7 ⏐S21⏐ 11.926 9.202 7.173 5.743 4.785 4.105 3.599 3.213 2.905 2.651 ∠S21 146.9 124.3 109.4 98.7 90.5 83.6 77.5 71.3 66.4 61.3 ⏐S12⏐ 0.036 0.058 0.073 0.086 0.098 0.110 0.123 0.136 0.150 0.165 ∠S12 70.7 60.9 57.4 56.7 56.7 57.2 57.7 57.6 57.6 57.2 ⏐S22⏐ 0.892 0.740 0.631 0.566 0.528 0.505 0.488 0.476 0.466 0.462 ∠S22 -19.1 -29.1 -33.7 -35.8 -37.2 -38.4 -39.6 -41.2 -43.3 -45.4 ∠S11 -52.6 -84.6 -106.3 -124.6 -136.5 -148.9 -158.3 -167.3 -175.6 -177.5 ⏐S21⏐ 16.354 11.011 8.026 6.250 5.115 4.336 3.813 3.365 3.030 2.754 ∠S21 136.2 113.3 100.5 91.3 84.7 78.8 73.4 68.1 63.5 58.9 ⏐S12⏐ 0.031 0.048 0.062 0.076 0.090 0.104 0.119 0.135 0.150 0.166 ∠S12 67.5 62.4 62.2 63.4 64.3 64.4 64.5 63.8 63.1 62.5 ⏐S22⏐ 0.804 0.622 0.533 0.491 0.469 0.458 0.449 0.443 0.436 0.438 ∠S22 -23.9 -30.5 -32.0 -32.4 -33.2 -34.6 -35.8 -37.7 -39.6 -41.9 ∠S11 -30.7 -56.3 -76.1 -93.1 -106.3 -119.6 -130.2 -140.5 -150.0 -160.0 ⏐S21⏐ 8.491 7.161 5.879 4.882 4.154 3.597 3.212 2.875 2.604 2.383 ∠S21 153.0 131.9 116.3 104.2 95.0 87.1 80.2 73.4 67.7 62.1 ⏐S12⏐ 0.044 0.075 0.095 0.109 0.121 0.132 0.143 0.154 0.166 0.179 ∠S12 72.5 60.9 54.1 51.0 49.3 48.7 48.6 48.7 48.6 48.9 ⏐S22⏐ 0.931 0.808 0.696 0.615 0.564 0.526 0.496 0.475 0.461 0.451 ∠S22 -17.1 -28.8 -36.2 -40.6 -43.5 -45.8 -47.5 -49.6 -51.6 -52.9 ∠S11 -18.9 -37.3 -53.6 -69.4 -82.5 -95.8 -106.1 -117.2 -127.5 -137.9 ⏐S21⏐ 3.296 3.206 2.942 2.711 2.449 2.252 2.061 1.909 1.766 1.658 ∠S21 162.5 145.9 131.2 117.8 107.0 96.9 88.1 79.5 72.2 65.2 ⏐S12⏐ 0.054 0.102 0.139 0.166 0.187 0.199 0.207 0.212 0.215 0.217 ∠S12 77.2 65.9 56.3 48.6 42.5 37.3 33.5 30.6 28.6 27.6 ⏐S22⏐ 0.980 0.934 0.870 0.811 0.763 0.715 0.673 0.638 0.611 0.592 ∠S22 -11.0 -20.5 -29.0 -35.5 -40.9 -45.7 -49.4 -53.4 -56.5 -59.9 VCE=5V, IC=10mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.605 0.417 0.319 0.266 0.238 0.225 0.215 0.213 0.212 0.216 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.842 0.704 0.579 0.480 0.417 0.376 0.343 0.319 0.303 0.298 VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ⏐S11⏐ 0.945 0.884 0.810 0.728 0.667 0.605 0.561 0.518 0.492 0.465 No. A1074-5/8 2SC5245A Embossed Taping Specification 2SC5245A-4-TL-E No. A1074-6/8 2SC5245A Outline Drawing 2SC5245A-4-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No. A1074-7/8 2SC5245A ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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