Ordering number : ENA1756A CPH6539 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE(sat) NPN Dual CPH6 Features • Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package • VCEO=30V, IC=1.5A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=0.16V(typ.)@IC=0.75A High-speed switching tf=30ns(typ.)@IC=0.75A Halogen free Compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage 40 V 30 V 5 V 1.5 A Collector Current (Pulse) VEBO IC ICP Base Current IB 300 mA Collector Dissipation PC PT When mounted on ceramic substrate (600mm2×0.8mm) 0.9 W Total Power Dissipation When mounted on ceramic substrate (600mm2×0.8mm) 1.2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Collector Current 3 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7018A-006 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. 4G 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6539-TL-H 0.15 2.9 6 TL 3 0.4 1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 Electrical Connection C1 B2 E2 E1 B1 C2 CPH6 Semiconductor Components Industries, LLC, 2013 August, 2013 62712 TKIM/70710EA TKIM TC-00002405 No. A1756-1/6 CPH6539 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=30V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=100mA VCE=10V, IC=300mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=750mA, IB=15mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 200 0.1 μA 0.1 μA 560 500 MHz 8 IC=750mA, IB=15mA pF 160 250 mV 0.85 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 40 IC=1mA, RBE=∞ 30 V V V(BR)EBO ton IE=10μA, IC=0A 5 V tstg tf See specified Test Circuit. 35 ns 205 ns 30 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 16Ω 50Ω + 100μF + 470μF VBE= --5V VCC=12V 20IB1= --20IB2=IC=750mA Ordering Information Device CPH6539-TL-H Package Shipping memo CPH6 3,000pcs./reel Pb Free and Halogen Free IC -- VCE 2.0 1.2 Collector Current, IC -- A A 50m 1.4 0.7 20mA 15mA 1.6 8mA 10mA 6mA 4mA 1.0 0.8 0.6 2mA 0.4 0.6 0.5 0.4 0.3 Ta=75 °C 25°C --25°C 40mA Collector Current, IC -- A VCE=2V 30mA 1.8 0.2 0.1 0.2 0 IC -- VBE 0.8 IB=0mA 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT15612 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Base-to-Emitter Voltage, VBE -- V 1.0 1.1 IT15613 No. A1756-2/6 CPH6539 hFE -- IC 2 Ta=75°C 7 25°C 5 --25°C 3 2 100 7 0.01 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A Cob -- VCB 100 10 7 5 3 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 100 7 5 3 2 3 5 7 2 0.1 3 5 7 2 1.0 IT01680 VCE(sat) -- IC IC / IB=20 3 2 0.1 7 °C 75 5 = Ta 3 5°C --2 2 7 0.01 5 2 3 °C 25 5 7 2 0.1 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.1 °C 75 7 = Ta 5 C 5° 2 °C --25 3 2 0.01 0.01 2 3 5 7 2 0.1 3 5 IC / IB=50 Collector Current, IC -- A ASO 1.0 IT15616 10 op er 3 2 0m s on ati 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 0.1 25°C 75°C 5 2 3 5 7 2 0.1 3 5 Collector Current, IC -- A Collector Dissipation, PC -- W DC ms s 0μ 10 s 0μ s 50 1m 10 1.0 7 5 3 7 PC -- Ta 7 1.0 IT15617 1.2 IC=1.5A 2 Ta= --25°C 1.4 ICP=3A 2 1.0 3 0.01 7 7 1.0 IT15615 VBE(sat) -- IC IC / IB=50 3 5 Collector Current, IC -- A IT01682 2 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 VCE(sat) -- IC 7 Collector Current, IC -- A 2 0.01 2 --0.1 0.01 3 f=1MHz 2 2 5 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 1.0 IT15614 3 3 7 2 0.01 7 5 3 1000 5 7 10 7 5 VCE=10V 2 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 1000 f T -- IC 3 VCE=2V 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT02326 1.0 0.9 0.8 To tal 1u 0.6 nit Di ss ip ati on 0.4 0.2 0 Mounted on a ceramic board(600mm2✕0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02327 No. A1756-3/6 CPH6539 Embossed Taping Specification CPH6539-TL-H No. A1756-4/6 CPH6539 Outline Drawing CPH6539-TL-H Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1756-5/6 CPH6539 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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