Power MOSFET, 20V, 22mOhm, 8A, Single N

MCH6448
Power MOSFET
20V, 22mΩ, 8A, Single N-Channel
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VDSS
Features
• Low On-Resistance
• 1.2V Drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
RDS(on) Max
22mΩ@ 4.5V
28mΩ@ 2.5V
20V
Electrical Connection
N-Channel
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Unit
Value
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±9
V
Drain Current (DC)
ID
8
A
IDP
32
A
PD
1.5
W
150
°C
−55 to +150
°C
PW≤10μs, duty cycle≤1%
1, 2, 5, 6
3
Power Dissipation
When mounted on ceramic substrate
8A
39mΩ@ 1.8V
124mΩ@ 1.2V
Specifications
Drain Current (Pulse)
ID Max
4
(1200mm2 × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Packing Type : TL
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Marking
Thermal Resistance Ratings
Value
Unit
ZX
LOT No.
Symbol
LOT No.
Parameter
Junction to Ambient
When mounted on ceramic substrate
2
RθJA
83.3
°C/W
TL
(1200mm × 0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
1
Publication Order Number :
MCH6448/D
MCH6448
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Value
min
typ
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±7.2V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=4A
7.7
RDS(on)1
ID=4A, VGS=4.5V
RDS(on)2
RDS(on)3
RDS(on)4
ID=0.5A, VGS=1.2V
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
Unit
max
20
V
1
μA
±10
μA
1.0
V
17
22
mΩ
ID=2A, VGS=2.5V
20
28
mΩ
ID=1A, VGS=1.8V
26
39
mΩ
62
124
mΩ
VDS=10V, f=1MHz
See specified Test Circuit
VDS=10V, VGS=4.5V, ID=8A
0.3
S
705
pF
150
pF
125
pF
6
ns
47
ns
103
ns
81
ns
11.2
nC
1.3
nC
2.8
IS=8A, VGS=0V
0.8
nC
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=4A
RL=2.5Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
50Ω
MCH6448
S
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2
MCH6448
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3
MCH6448
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4
MCH6448
Package Dimensions
MCH6448-TL-H / MCH6448-TL-W
MCPH6
CASE 419AS
ISSUE O
unit : mm
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Recommended
Soldering Footprint
2.1
0.6
0.4
0.65 0.65
ORDERING INFORMATION
Device
MCH6448-TL-H
MCH6448-TL-W
Package
Shipping
Note
MCPH6
SC-88FL,SC-70-6,SOT-363
3,000 pcs. / Tape & Reel
Pb-Free
and Halogen Free
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel
Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
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