Ordering number : ENA0176C FW216A N-Channel Power MOSFET http://onsemi.com 35V, 4.5A, 64mΩ, Dual SOIC8 Features ON-resistance Nch : RDS(on)1=49mΩ (typ.) 4.0V drive Halogen free compliance Protection diode in • • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 35 V ±20 V 4.5 A Duty cycle≤1% 18 A When mounted on ceramic substrate (2000mm2×0.8mm) 1unit, PW≤10s 1.6 W Total Dissipation PD PT 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7072-001 FW216A-TL-2W 4.9 0.22 5 0.375 1 4 0.445 0.254 (GAGE PLANE) 0.175 1.55 1.375 1.27 Semiconductor Components Industries, LLC, 2013 October, 2013 0.715 Packing Type : TL 3.9 6.0 8 • Package : SOIC8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 2,500 pcs./reel 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Marking FW216 TL A LOT No. Electrical Connection 8 7 6 5 1 2 3 4 SOIC8 O1613 TKIM/61312 TKIM/31412 TKIM/20112PA TKIM TC-00002686 No. A0176-1/5 FW216A Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Unit max 35 VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.5 1 μA ±10 μA 2.5 V RDS(on)1 ID=4.5A, VGS=10V 49 64 mΩ RDS(on)2 ID=2A, VGS=4.5V 80 112 mΩ RDS(on)3 ID=2A, VGS=4.0V 100 140 mΩ Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time S 280 pF 60 pF Crss 30 pF td(on) tr 6 ns 21 ns td(off) tf Fall Time typ 2.6 Ciss Turn-OFF Delay Time ID=1mA, VGS=0V VDS=35V, VGS=0V Ratings min VDS=10V, ID=4.5A Input Capacitance Rise Time Conditions Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=4.5A IS=4.5A, VGS=0V 20 ns 10 ns 5.6 nC 1.2 nC 0.8 nC 0.85 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=4.5A RL=3.3Ω VIN D VOUT PW=10μs D.C.≤1% G FW216A P.G 50Ω S Ordering Information Device FW216A-TL-2W Package Shipping memo SOIC8 2,500pcs./reel Pb Free and Halogen Free No. A0176-2/5 FW216A ID -- VDS V 4.0 7 1.5 2 0.5 1 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ ID=2.0A 4.5A 200 150 100 50 0 0 2 4 6 8 Source Current, IS -- A 25° 2 C 5°C --2 = Ta °C 75 1.0 7 5 3 3 5 7 0.1 2 3 5 7 1.0 2 3 100 50 5.0 IT16698 --40 --20 0 20 40 60 80 100 120 140 160 IT16700 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 5 7 10 IT16701 0 3 td(off) 2 10 tf td(on) 5 tr 3 0.6 0.8 1.0 1.2 IT16702 f=1MHz 7 5 Ciss, Coss, Crss -- pF 5 0.4 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V 7 0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 100 Ciss 3 2 100 7 Coss 5 Crss 3 2 2 1.0 0.1 4.5 0.01 2 Drain Current, ID -- A 7 4.0 3 2 2 0.1 0.01 3.5 2.0A , I D= 4.0V = VGS 2.0A ,I = 4.5V D = VGS .5A , I =4 10.0V D = S VG 10 7 5 5 3 3.0 Ambient Temperature, Ta -- °C VDS=10V 7 2.5 150 IT16699 | yfs | -- ID 10 2.0 RDS(on) -- Ta 0 --60 10 Gate to Source Voltage, VGS -- V 1.5 200 Ta=25°C 250 1.0 Gate to Source Voltage, VGS -- V RDS(on) -- VGS 300 0.5 IT16697 25°C --25° C 0.3 5°C 0.2 Ta= 7 0.1 Drain to Source Voltage, VDS -- V Static Drain to Source On-State Resistance, RDS(on) -- mΩ 3 1.0 0 Forward Transfer Admittance, | yfs | -- S 4 Ta= 75° C VGS=3.0V °C 2.0 5 --2 5 2.5 6 25 °C 3.0 0 Switching Time, SW Time -- ns VDS=10V 8 Drain Current, ID -- A 3.5 ID -- VGS 9 6.0V 10.0V 8.0V 4.0 Drain Current, ID -- A 4.5V 4.5 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT16703 0 10 20 30 Drain to Source Voltage, VDS -- V IT16704 No. A0176-3/5 FW216A VGS -- Qg 10 8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC To tal di ss ip ati 1u nit on 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 1.0 7 5 3 2 0.1 7 5 3 2 140 160 IT16707 10 0 1m μs 10 s 10 ms 0m s DC 10 s op er ati on ID=4.5A Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1unit When mounted on ceramic substrate (2000mm2×0.8mm) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain to Source Voltage, VDS -- V Allowable Power Dissipation(FET1), PD -- W Allowable Power Dissipation, PD -- W 2.0 1.6 1.5 10 7 5 3 2 IT16705 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 2.2 IDP=18A (PW≤10μs) 0.01 0.01 6 PD -- Ta 2.5 ASO 100 7 5 3 2 VDS=10V ID=4.5A 5 7 100 IT16706 PD (FET1) -- PD (FET2) 2.0 When mounted on ceramic substrate (2000mm2×0.8mm), PW≤10s 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation(FET2), PD -- W 2.0 IT16708 No. A0176-4/5 FW216A Outline Drawing FW216A-TL-2W Land Pattern Example Mass (g) Unit 0.082 mm * For reference Unit: mm 5.60 1.75 0.65 1.27 Note on usage : Since the FW216A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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