MCH5839 Power MOSFET –20V, 266mΩ, –1.5A, Single P-Channel with Schottky Diode MCH5839 is a P-Channel Power MOSFET, with Schottky Diode for general-purpose switching device applications. Features Composite type with a P-Channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting Pb-Free, Halogen Free and RoHS compliance [MOSFET] Low On-resistance ESD Diode-Protected Gate 1.8V drive [SBD] Short reverse recovery time Low forward voltage MOSFET RDS(on) Max 266mΩ@ 4.5V ID Max 20V 413mΩ@ 2.5V 1.5A SCHOTTKY DIODE VRRM VF Max IFSM 15V 0.46V 3A ELECTRICAL CONNECTION P-Channel SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Symbol VDSS 645mΩ@ 1.8V Typical Applications DC/DC Converter Parameter www.onsemi.com 5 Value 4 Unit 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain [MOSFET] Drain to Source Voltage VDSS 20 Gate to Source Voltage VGSS ID 10 V 1.5 A Drain Current (DC) V 6 A Power Dissipation When mounted on ceramic substrate 2 (1000mm 0.8mm) 1unit PD 0.8 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +125 C 1 2 PACKING TYPE : TL 3 MARKING YD LOT No. IDP LOT No. Drain Current (Pulse) PW 10s, duty cycle 1% TL [SBD] Repetitive Peak Reverse Voltage VRRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V ORDERING INFORMATION Average Output Current IO 1 A Surge Forward Current 50Hz sine wave, 1cycle See detailed ordering and shipping information on page 6 of this data sheet. IFSM 3 A Junction Temperature Tj 55 to +125 C Storage Temperature Tstg 55 to +125 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate 2 (1000mm 0.8mm) 1unit Symbol RJA © Semiconductor Components Industries, LLC, 2015 August 2015 - Rev. 1 Value 156.2 1 Unit C/W Publication Order Number : MCH5839/D MCH5839 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V Gate to Source Leakage Current IGSS VGS=8V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS RDS(on)1 RDS(on)2 VDS=10V, ID=750mA ID=750mA, VGS=4.5V Input Capacitance RDS(on)3 Ciss Output Capacitance Coss VDS=10V, f=1MHz Reverse Transfer Capacitance Value Conditions min typ max Unit [MOSFET] Static Drain to Source On-State Resistance 20 V 1 A 10 A 1.4 V 205 266 m ID=300mA, VGS=2.5V 295 413 m ID=100mA, VGS=1.8V 430 645 m 0.4 1.9 S 120 pF 26 pF Crss 20 pF Turn-ON Delay Time td(on) 5.3 ns Rise Time tr 9.7 ns Turn-OFF Delay Time td(off) 16 ns Fall Time tf Qg Total Gate Charge See specified Test Circuit Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=1.5A, VGS=0V Reverse Voltage VR Forward Voltage VF IR=0.5mA IF=0.5A Reverse Current IR VR=6V Interterminal Capacitance C VR=10V, f=1MHz VDS=10V, VGS=4.5V, ID=1.5A 14 ns 1.7 nC 0.28 nC 0.47 nC 0.89 1.2 0.4 0.46 V 90 A V [SBD] 15 V 13 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit 10 ns Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit trr Test Circuit (MOSFET) (SBD) ID= --750mA RL=13.3 VIN D VOUT PW=10s D.C.≤1% 50 10s 10 --5V G t rr MCH5839 P.G 100 10mA 100mA Duty≤10% VDD= --10V VIN 100mA 0V --4.5V 50 S www.onsemi.com 2 MCH5839 www.onsemi.com 3 MCH5839 www.onsemi.com 4 MCH5839 www.onsemi.com 5 MCH5839 PACKAGE DIMENSIONS unit : mm SC-88AFL / MCPH5 CASE 419AP ISSUE O 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) YD SC-88AFL / MCPH5 (Pb-Free / Halogen Free) 3,000 / Tape & Reel MCH5839-TL-H MCH5839-TL-W † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH5839 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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