Ordering number : EN2550B 2SK536 N-Channel MOSFET http://onsemi.com 50V, 100mA, Single CP Features • • • Large | yfs | Enhancement type Low ON-state resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit Gate to Source Voltage VDS VGS ±12 V Drain Current ID 100 mA Drain Current(Pulse) IDP PD 300 mA 200 mW Allowable Power Dissipation 50 V Channel Temperature Tch 125 °C Storage Temperature Tstg --55 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions Device unit : mm (typ) 7013A-010 0.5 2.9 0.1 2SK536-TB-E memo CP SC-59, TO-236, SOT-23, TO-236AB 3,000pcs./reel Pb-Free Packing Type: TB Marking 0.4 1 : Gate 2 : Drain 3 : Source CP 0.3 1.1 0.95 BJ TB 2 0.05 0.5 1 LOT No. 1.5 3 Shipping LOT No. 2.5 2SK536-TB-E Package Electrical Connection 2 1 3 Semiconductor Components Industries, LLC, 2013 July, 2013 71713 TKIM/52899TH (KT)/4237TA, TS No.2550-1/4 2SK536 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DS IGSS IDSS ID=10μA, VGS=0V VGS=10V, VDS=0V VDS=10V, ID=100μA Forward Transfer Admittance IGS(off) | yfs | VDS=10V, ID=50mA, f=1kHz Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Source ON Resistance RDS(on) Gate to Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage 40 2.5V 2.0V 1.5V 4 6 8 10 12 Drain to Source Voltage, VDS -- V ⏐yfs⏐ -- ID 7 5 3 2 10 7 5 5 7 10 2 3 5 7 100 Drain Current, ID -- mA 2 3 20 10 4 pF 0.5 pF 20 Ω 6 8 10 60 40 0 2 12 Gate to Source Voltage, VGS -- V 14 16 ITR00799 4 6 8 10 ITR00796 ⏐yfs⏐ -- VGS 0V 50 V =1 DS 40 3V 30 1V 20 10 0 0.6 1.0 1.4 1.8 2.2 2.6 Gate to Source Voltage, VGS -- V Ciss, Coss, Crss -- VDS 20 Input Capacitance, Ciss -- pF Output Capacitance, Coss -- pF Reverse Transfer Capacitance, Crss -- pF On Resistance, RDS(on) -- Ω 30 2 pF 6 80 ITR00797 40 0 15 V 100 60 5 ID=10mA 0 mS Gate to Source Voltage, VGS -- V RDS(on) -- VGS 50 40 ID -- VGS ITR00795 100 3 25 120 0 14 VDS=10V 2 1.5 20 Forward Transfer Admittance, ⏐yfs⏐ -- mS 20 Forward Transfer Admittance, ⏐yfs⏐ -- mS Drain Current, ID -- mA 3.0V 60 7 1.0 μA 0.9 VDS=10V 80 3 1 0.3 140 3.5V 2 nA 160 4.5V 4.0V 2 V 10 VGS=10V, ID=10mA 100 0 0 Unit max 0.01 VDS=10V, VGS=0V, f=1MHz 5.0 V 120 typ VDS=20V, VGS=0V V GS = Drain Current, ID -- mA 140 min 50 ID -- VDS 160 Ratings Conditions 3.0 ITR00798 18 16 Ciss 14 12 10 8 Coss 6 4 2 Crss 0 0 2 4 6 8 10 12 14 Drain to Source Voltage, VDS -- V 16 ITR00800 No.2550-2/4 2SK536 Outline Drawing 2SK536-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.2550-3/4 2SK536 Note on usage : Since the 2SK536 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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