SB20-03P-TD-E - ON Semiconductor

Ordering number : EN2985B
SB20-03P
Schottky Barrier Diode
http://onsemi.com
30V, 2A, Low IR, Single PCP
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
• Fast reverse recovery time (trr max=20ns)
Low forward voltage (VF max=0.55V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Conditions
Ratings
VRRM
VRSM
Surge Forward Current
IO
IFSM
Junction Temperature
Storage Temperature
50Hz sine wave, 1 cycle
Unit
30
V
35
V
2
A
20
A
Tj
--55 to +125
°C
Tstg
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-001
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
SB20-03P-TD-E
4.5
1.6
1
2
Marking
SC
Packing Type: TD
4.0
1.0
2.5
1.5
LOT No.
Top View
TD
3
0.4
0.4
0.5
Electrical Connection
1.5
3.0
0.75
1
2
3
1 : Anode
2 : Cathode
3 : No Contact
Bottom View
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/53098HA (KT)/1309TA, TS No.2985-1/6
SB20-03P
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Conditions
VR
VF
IR
Forward Voltage
Reverse Current
IR=500μA
IF=2A
typ
max
30
VR=15V
VR=10V, f=1MHz
Interterminal Capacitance
C
Reverse Recovery Time
trr
Rth(j-a)1
IF=IR=100mA, See specified Test Circuit.
Rth(j-a)2
When mounted on ceramic substrate (250mm2×0.8mm)
Thermal Resistance
Ratings
min
Unit
V
0.55
V
100
μA
70
pF
20
ns
300
°C / W
110
°C / W
trr Test Circuit
50Ω
100Ω
10μs
10Ω
10mA
100mA 100mA
Duty≤10%
--5V
trr
Ordering Information
Device
SB20-03P-TD-E
Package
Shipping
memo
PCP
1,000pcs./reel
Pb Free
No.2985-2/6
SB20-03P
IF -- VF
10
IR -- VR
10
7
5
Ta=125°C
5
Reverse Current, IR -- mA
3
2
1.0
7
5
3
2
25°C
Ta=
125
°C
Forward Current, IF -- A
2
2
75°C
0.1
5
50°C
2
0.01
25°C
5
0.001
7
5
0
0.2
0.4
0.6
0.8
1.0
Forward Voltage, VF -- V
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
15
20
25
30
Reverse Voltage, VR -- V
35
ID00532
C -- VR
5
(4)
(3)
(2)
(1)
θ
1.0
10
f=1MHz
Rectangular
wave
1.5
5
ID00531
PF(AV) -- IO
2.5
2.0
5
0
1.2
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- W
100°C
5
2
0.1
360°
Sine wave
0.5
3
2
100
7
5
3
2
180°
360°
0
0
1.0
0.5
1.5
2.0
2.5
Average Forward Current, IO -- A
3.0
ID00533
IFSM -- t
24
Surge Forward Current, IFSM(Peak) -- A
1.0
10
1.0
2
3
5
7
10
2
3
Reverse Voltage, VR -- V
5
7 100
ID00534
Current waveform 50Hz sine wave
IS
20
20ms
t
16
12
8
4
0
7 0.01
2
3
5
7
0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00535
No.2985-3/6
SB20-03P
Embossed Taping Specification
SB20-03P-TD-E
No.2985-4/6
SB20-03P
Outline Drawing
SB20-03P-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.2985-5/6
SB20-03P
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PS No.2985-6/6