PYX28HC64 8K x 8 EEPROM FEATURES Access Times of 70, 90, and 120ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 100,000 Cycles Low Power CMOS: - 40 mA Active Current - 200 µA Standby Current Fast Write Cycle Times DESCRIPTION Data Retention: 100 Years Available in the following packages: – 32-Pin Ceramic LCC (450 x 550 mils) – 28-Pin 600 mil Ceramic DIP Pin ConfigurationS The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating gate CMOS Technology. The device supports 64-byte page write operation. The PYX28HC64 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle. The device also includes user-optional software data protection. Endurance is 100,000 Cycles and Data Retention is 100 Years. The device is available in a 32-Pin LCC package as well as a 28-Pin 600 mil wide Ceramic DIP. Functional Block Diagram DIP (C5-1) LCC (L6) Document # EEPROM107 REV OR Revised August 2011 PYX28HC64 - 8K x 8 EEPROM Maximum Ratings(1) Sym RECOMMENDED OPERATING CONDITIONS Parameter Value Unit Grade(2) Ambient Temp GND VCC Military -55°C to +125°C 0V 5.0V ± 10% VCC Power Supply Pin with Respect to GND -0.3 to +6.25 V VTERM Terminal Voltage with Respect to GND (up to 7.0V) -0.5 to +6.25 V TA Operating Temperature -55 to +125 °C TBIAS Temperature Under Bias -55 to +125 °C TSTG Storage Temperature -65 to +150 °C Sym Parameter CAPACITANCES(4) (VCC = 5.0V, TA = 25°C, f = 1.0MHz) PT Power Dissipation 1.0 W CIN Input Capacitance IOUT DC Output Current 50 mA COUT Output Capacitance Conditions Typ Unit VIN = 0V 10 pF VOUT = 0V 10 pF DC ELECTRICAL CHARACTERISTICS (Over Recommended Operating Temperature & Supply Voltage)(2) Sym Parameter Test Conditions Min Max Unit VIH Input High Voltage 2.0 VCC + 0.5 V VIL Input Low Voltage -0.5(3) 0.8 V VHC CMOS Input High Voltage VCC - 0.2 VCC + 0.5 V VLC CMOS Input Low Voltage -0.5(3) 0.2 V VOL Output Low Voltage (TTL Load) IOL = +5 mA, VCC = Min 0.4 V VOH Output High Voltage (TTL Load) IOH = -5 mA, VCC = Min ILI Input Leakage Current ILO Output Leakage Current VCC = Max VIN = GND to VCC VCC = Max, CE = VIH, VOUT = GND to VCC 2.4 V -10 +10 µA -10 +10 µA — 3 mA — 250 µA — 40 µA CE ≥ VIH, OE = VIL, ISB Standby Power Supply Current (TTL Input Levels) VCC = Max, f = Max, Outputs Open CE ≥ VHC, ISB1 Standby Power Supply Current (CMOS Input Levels) VCC = Max, f = Max, Outputs Open, VIN ≤ VLC or VIN ≥ VHC CE = OE = VIL, ICC Supply Current WE = VIH, All I/O's = Open, Inputs = VCC = 5.5V Notes: 1.Stresses greater than those listed under Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Maximum rating conditions for extended periods may affect reliability. 2.Extended temperature operation guaranteed with 400 linear feet per minute of air flow. Document # EEPROM107 REV OR 3. Transient inputs with VIL and IIL not more negative than -3.0V and -100mA, respectively, are permissible for pulse widths up to 20ns. 4. This parameter is sampled and not 100% tested. Page 2 PYX28HC64 - 8K x 8 EEPROM AC ELECTRICAL CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) -70 -90 -120 Sym Parameter tAVAV Read Cycle Time tAVQV Address Access Time 70 90 120 ns tELQV Chip Enable Access Time 70 90 120 ns tOLQV Output Enable Access Time 40 50 60 ns tELQX Chip Enable to Output in Low Z tEHQZ Chip Disable to to Output in High Z tOLQX Output Enable to Output in Low Z tOHQZ Output Disable to Output in High Z tAVQX Output Hold from Address Change Min Max 70 Min Max 90 10 10 10 0 ns 50 10 50 0 Unit ns 10 50 50 Max 120 10 50 Min ns ns 50 0 ns ns tPU Chip Enable to Power Up Time 90 90 90 ns tPD Chip Disable to Power Down Time 10 10 10 ns TIMING WAVEFORM OF READ CYCLE Document # EEPROM107 REV OR Page 3 PYX28HC64 - 8K x 8 EEPROM AC CHARACTERISTICS—WRITE CYCLE (VCC = 5V ± 10%, All Temperature Ranges)(2) Symbol Parameter -70 Min -90 Max Min -120 Max Min Max Unit tWHWL1 tEHEL1 Write Cycle Time tAVEL tAVWL Address Setup Time 10 10 10 ns tELAX tWLAX Address Hold Time 60 60 60 ns tWLEL tELWL Write Setup Time 0 0 0 ns tWHEH Write Hold Time 0 0 0 ns tOHEL tOHWL OE Setup Time 10 10 10 ns tWHOL OE Hold Time 10 10 10 ns tELEH tWLWH WE Pulse Width 60 60 60 ns tDVEH tDVWH Data Setup Time 50 50 50 ns tEHDX tWHDX Data Hold Time 10 10 10 ns tEHEL2 tWHWL2 Byte Load Cycle Time 0.2 5 2 5 0.2 2 5 0.2 2 ms µs tELWL CE Setup Time 1 1 1 µs tOVHWL Output Setup Time 1 1 1 µs tEHWH CE Hold Time 1 1 1 µs tWHOH OE Hold Time 1 1 1 µs tOHAV Erase Time 200 200 200 ms tWLWH2 Chip Erase Time 150 150 150 ns High Voltage for Chip Clear 12 VH Document # EEPROM107 REV OR 13 12 13 12 13 V Page 4 PYX28HC64 - 8K x 8 EEPROM TIMING WAVEFORM OF BYTE WRITE Cycle (cE Controlled) TIMING WAVEFORM OF BYTE WRITE Cycle (wE Controlled) Document # EEPROM107 REV OR Page 5 PYX28HC64 - 8K x 8 EEPROM TIMING WAVEFORM OF PAGE WRITE CYCLE TIMING WAVEFORM OF CHIP CLEAR CYCLE Document # EEPROM107 REV OR Page 6 PYX28HC64 - 8K x 8 EEPROM WRITE SEQUENCE FOR SOFTWARE DATA PROTECTION Document # EEPROM107 REV OR SOFTWARE SEQUENCE TO DE-ACTIVATE SOFTWARE DATA PROTECTION Page 7 PYX28HC64 - 8K x 8 EEPROM AC TEST CONDITIONS Input Pulse Levels TRUTH TABLE GND to 3.0V Input Rise and Fall Times 10ns Input Timing Reference Level 1.5V Output Timing Reference Level 1.5V Output Load See Figure 1 Mode CE OE WE I/O Read VIL VIL VIH DOUT Chip Clear VIL VIH VIL X Byte Write VIL VIH VIL DIN Write Inhibit X VIL X High Z / DOUT Write Inhibit X X VIH High Z / DOUT Standby VIH X X High Z Figure 1. Output Load Document # EEPROM107 REV OR Page 8 PYX28HC64 - 8K x 8 EEPROM ORDERING INFORMATION Document # EEPROM107 REV OR Page 9 PYX28HC64 - 8K x 8 EEPROM SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils) C5-1 Pkg # # Pins 28 (600 mil) Symbol Min Max A - 0.232 b 0.014 0.026 b2 0.045 0.065 C 0.008 0.018 D - 1.490 E 0.500 0.610 eA 0.600 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 - S2 0.005 - Pkg # L6 # Pins 32 RECTANGULAR LEADLESS CHIP CARRIER Symbol Min Max A 0.060 0.075 A1 0.050 0.065 B1 0.022 0.028 D 0.442 0.458 D1 0.300 BSC D2 0.150 BSC D3 - 0.458 E 0.540 0.560 E1 0.400 BSC E2 0.200 BSC E3 - 0.558 e 0.050 BSC h 0.040 REF j 0.020 REF L 0.045 0.055 L1 0.045 0.055 L2 0.075 0.095 ND 7 NE 9 Document # EEPROM107 REV OR Page 10 PYX28HC64 - 8K x 8 EEPROM REVISIONS DOCUMENT NUMBER EEPROM107 DOCUMENT TITLE PYX28HC64 - 8K x 8 EEPROM REV ISSUE DATE ORIGINATOR OR Aug 2011 JDB Document # EEPROM107 REV OR DESCRIPTION OF CHANGE New Data Sheet Page 11