PY263/PY264 - Pyramid Semiconductor

PY263/PY264
8K x 8 REPROGRAMMABLE PROM
FEATURES
EPROM Technology for reprogramming
Windowed devices for reprogramming
High Speed
Fully TTL Compatible Inputs and Outputs
– 25/35/45/55 ns (Commercial)
– 25/35/45/55 ns (Military)
Low Power Operation:
– 660 mW Commercial
– 770 mW Military
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil Windowed CERDIP (PY263)
– 24-Pin 300 mil Non-Windowed Plastic DIP (PY263)
– 24-Pin 600 mil Windowed CERDIP (PY264)
– 24-Pin 600 mil Non-Windowed Plastic DIP (PY264)
Single 5V±10% Power Supply
DESCRIPTION
The PY263 and PY264 are 8Kx8 CMOS PROMs. The
devices are available in windowed packages which when
exposed to UV light, the memory content in the PROM is
erased and can be reprogrammed. EPROM technology is
used in the memory cells for programming. The EPROM
requires a 12.5V for programming. Devices are tested to
insure that performance of the device meets the DC and
AC specification limits after customer programming.
Functional Block Diagram
To perform a read operation from the device, CS is LOW.
The memory contents in the address established by the
Address pins (A0 to A12) will become available on the outputs (O0 to O7).
The PY263 is available in 24-pin 300 mil Ceramic DIPs
(Windowed) and Plastic DIPs (Non-Windowed).
The PY264 is available in 24-pin 600 mil Ceramic DIPs
(Windowed) and Plastic DIPs (Non-Windowed).
Pin Configuration
DIP (P8, WD2)
Note: Window on
WD2 package only
Document # EPROM102 REV A
Revised March 2009
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
Maximum Ratings(1)
Sym
RECOMMENDED OPERATING CONDITIONS
Parameter
Value
Unit
V
VCC
Power Supply Pin with
Respect to GND
-0.5 to +7
VTERM
Terminal Voltage with
Respect to GND (up to
7.0V)
-0.5 to VCC + 0.5
V
13
V
Grade(2)
Commercial
Military
Ambient Temp
GND
VCC
0°C to 70°C
0V
5.0V ± 10%
-55°C to +125°C
0V
5.0V ± 10%
VPP
Program Voltage
TA
Operating Temperature
-55 to +125
°C
TBIAS
Temperature Under Bias
-55 to +125
°C
Sym
Parameter
TSTG
Storage Temperature
-65 to +150
°C
CIN
Input Capacitance
COUT
Output Capacitance
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
Conditions
Typ
Unit
VIN=0V
10
pF
VOUT=0V
10
pF
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym
Parameter
PY263 / PY264
Test Conditions
Min
Max
Unit
VIH
Input High Voltage
2.0
VCC
V
VIL
Input Low Voltage
-0.5(3)
0.8
V
VHC
CMOS Input High Voltage
VCC - 0.2
VCC + 0.5
V
VLC
CMOS Input Low Voltage
-0.5(3)
0.2
V
VOL
Output Low Voltage (TTL Load)
IOL=+16 mA, VCC = Min.
0.4
V
VOH
Output High Voltage (TTL Load)
IOH = - 4 mA, VCC = Min
ILI
Input Leakage Current
VCC = Max, VIN = GND to VCC
ILO
Output Leakage Current
VCC = Max, CE = VIH,
VOUT = GND to VCC
VPP
Programming Supply Voltage
IPP
Programming Supply Current
VIHP
Input HIGH Programming Voltage
VILP
Input LOW Programming Voltage
2.4
V
COM
-10
+10
µA
MIL
-40
+40
µA
COM
-10
+10
µA
MIL
-40
+40
µA
12
13
V
50
mA
4.75
V
0.4
V
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Sym
Parameter
ICC
Dynamic Operating Current
Temperature Range
-25
-35
-45
-55
Unit
Commercial
120
100
100
100
mA
Military
140
120
120
120
mA
* VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CS = VIL.
Document # EPROM102 REV A
Page 2
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym
tAA
Parameter
-25
Min
-35
Max
Min
-45
Max
Min
-55
Max
Min
Max
Unit
Address to Output Valid
25
35
45
55
ns
tHZCS
Chip Select Inactive to High Z
12
20
30
35
ns
tACS
Chip Select Active to Output Valid
12
20
30
35
ns
tPU
Chip Select Active to Power-Up
0
0
0
0
ns
TIMING WAVEFORM OF READ CYCLE
Notes:
1.Stresses greater than those listed under Maximum Ratings may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to Maximum rating conditions for extended
periods may affect reliability.
Document # EPROM102 REV A
2.Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3.Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4.This parameter is sampled and not 100% tested.
Page 3
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
DEVICE ERASURE
READ MODE
If the device is subjected to wavelengths of light below
4000 Angstroms, device erasure will commence. It is
therefore recommended to use an opaque label over the
window in the event the device will be exposed to lighting for a long time. The UV dose for erasure requires a
wavelength of 2,537 Angstroms for a minimum dose of 25
Wsec/cm2. If using a UV lamp of 12 mW/cm2, the exposure time is estimated to be 35 minutes. Devices should
be positioned within 1 inch of the lamp during the erasure
process. Permanent damage can occur to the devices if
exposed to UV light for an extended period of time.
Reading the addressed content is the normal operating
mode for a programmed device. Signals are at normal
TTL levels. Addressing is applied to the 13 address pins
and CS is LOW. Under these conditions, the addressed
location contents are presented to the output pins.
MODE SELECTION
Pin Function
Read or Output Disable
A12
A11
A10
A9
A8
CS
O7-O0
Program
NA
VPP
LATCH
PGM
VFY
CS
D7-D0
Read
A12
A11
A10
A9
A8
VIL
O7-O0
Output Disable
A12
A11
A10
A9
A8
VIH
High Z
Program
VILP
VPP
VILP
VILP
VIHP
VILP
D7-D0
Program Inhibit
VILP
VPP
VILP
VIHP
VIHP
VILP
High Z
Program Verify
VILP
VPP
VILP
VIHP
VILP
VILP
O7-O0
Blank Check
VILP
VPP
VILP
VIHP
VILP
VILP
O7-O0
Mode
PROGRAMMING PINOUTS
Document # EPROM102 REV A
Page 4
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
3ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
Output Load
1.5V
See Figures 1 and 2
Figure 1. Output Load
Figure 2. Thevenin Equivalent
Note:
Because of the ultra-high speed of the PY263/PY264, care must be
taken when testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads that
cause supply bounce must be avoided by bringing the VCC and ground
planes directly up to the contactor fingers. A 0.01 µF high frequency
capacitor is also required between VCC and ground.
* including scope and test fixture.
Document # EPROM102 REV A
Page 5
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
ORDERING INFORMATION
Document # EPROM102 REV A
Page 6
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
CERAMIC DUAL INLINE PACKAGE (WINDOWED)
WD1
Pkg #
# Pins
24 (300 mil)
Symbol
Min
Max
A
-
0.200
b
0.014
0.026
b2
0.045
0.065
C
0.008
0.018
D
-
1.280
E
0.220
0.310
eA
0.300 BSC
e
0.100 BSC
L
0.125
0.200
Q
0.015
0.060
S1
0.005
-
α
0°
15°
WD
0.175
Pkg #
WD2
# Pins
24 (600 mil)
Symbol
Min
Max
A
0.175
0.225
b
0.015
0.020
b2
0.045
0.065
C
0.009
0.012
D
-
1.280
E
0.505
0.550
CERAMIC DUAL INLINE PACKAGE (WINDOWED)
eA
0.600 BSC
e
0.100 BSC
L
0.125
0.200
Q
0.015
0.060
S1
0.005
-
α
0°
15°
WD
0.280
Document # EPROM102 REV A
Page 7
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
PLASTIC DUAL INLINE PACKAGE (NON-WINDOWED)
P4
Pkg #
# Pins
24 (300 Mil)
Symbol
Min
Max
A
-
0.210
A1
0.015
-
b
0.014
0.022
b2
0.045
0.070
C
0.008
0.014
D
1.230
1.280
E1
0.240
0.280
E
0.280
0.325
e
0.100 BSC
eB
-
0.430
L
0.115
0.160
α
0°
15°
PLASTIC DUAL INLINE PACKAGE (NON-WINDOWED)
Pkg #
P8
# Pins
24 (600 mil)
Symbol
Min
Max
A
0.155
0.200
A1
0.015
0.060
b
0.015
0.020
b2
0.055
0.065
C
0.009
0.012
D
1.230
1.260
E1
0.530
0.550
E
0.570
0.625
e
0.100 BSC
eB
0.610
0.685
L
0.115
0.160
α
0°
15°
Document # EPROM102 REV A
Page 8
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
REVISIONS
DOCUMENT NUMBER
EPROM102
DOCUMENT TITLE
PY263 / PY264 8K X 8 PROGRAMMABLE PROM
REV
ISSUE DATE
ORIGINATOR
OR
Jul-2007
JDB
New Data Sheet
A
Mar-2009
JDB
Added PY263 (300 mil)
Document # EPROM102 REV A
DESCRIPTION OF CHANGE
Page 9