2SC5729 Transistor Medium power transistor (30V, 0.5A) 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Units : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2047 1.25 (1) Emitter (2) Base (3) Collector 0.15 0.2 2.1 0.1Min. Each lead has same dimensions Abbreviated symbol : UW zApplications Small signal low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Package Type Taping Code T106 Basic ordering unit (pieces) 3000 2SC5729 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Parameter IC 0.5 A ICP 1.0 A Power dissipation PC 200 mW Junction temperrature Tj 150 °C Tstg −55 to +150 °C Collector current Range of storage temperature ∗1 ∗2 ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. Rev.A 1/3 2SC5729 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Conditions Unit BVCEO 30 − − V IC=100µA Collector−emitter breakdown voltage BVCBO 30 − − V IC=1mA BVEBO 6 − − V IE=100µA Collector cut-off current ICBO − − 1.0 µA VCB=20V Emitter cut-off current IEBO − − 1.0 µA VEB=4V IC=100mA, IB=10mA Collector−base breakdown voltage Emitter−base breakdown voltage VCE(sat) − 150 300 mV DC current gain hFE 120 − 390 − Transition frequency fT − 300 − MHz Collector output capacitance Cob − 5 − pF VCB=10V, IE=0A, f=1MHz Turn-on time Ton − 40 − ns Tstg − 120 − ns Tf − 50 − ns IC=500mA IB1=50mA IB2= −50mA VCC ~ 25V Collector−emitter staturation voltage Storage time Fall time VCE=2V, IC=50mA VCE=10V, IE= −100mA, f=10MHz zhFE RANK Q R 120-270 180-390 zElectrical characteristic curves 10 1000 1000 1ms 100ms DC 0.01 1 10 Tstg 100 Tf Ton 10 0.01 100 0.1 COLLECTOR SATURATION VOLTAGE : VCE(sat) DC CURRENT GAIN : hFE IC/IB=10/1 VCE=3V 100 VCE=2V 1 Ta=125°C 0.1 Ta=25°C Ta=−40°C 10 0.001 0.01 0.1 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current 1 0.01 0.001 0.01 0.1 0.1 1 Fig.3 DC current gain vs. collector current 10 1000 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Fig.1 Safe operating area VCE=5V Ta=−40°C 10 0.001 1 Ta=25°C 100 COLLECTOR CURRENT : IC (A) COLLECTOR EMITTER VOLTAGE : VCE (V) 1 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE (sat) 0.001 0.1 Ta=125°C DC CURRENT GAIN : hFE 10ms 1 0.1 VCE=2V Ta=25°C VCC=25V IC/IB=10/1 SWITCHING TIME (ns) COLLECTOR CURRENT : IC (A) Single non repoetitive pulse 10 Ta=25°C 1 IC/IB=100/1 0.1 IC/IB=20/1 IC/IB=10/1 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Collector-emitter saturation voltage vs. collector current Rev.A 2/3 2SC5729 Transistor 1000 1000 100 Ta=125°C 10 0.001 VCE=2V COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE(sat) Ta=25°C Ta=−40°C Ta=25°C Ta=125°C 0.1 Ta=−40°C 0.01 0.01 0.1 0 1 COLLECTOR CURRENT : IC (A) 0.5 1 1.5 2 Ta=25°C VCE=10V 100 10 −0.001 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : COB (pF) TRANSITION FREQUENCY : fT (MHz) 1 IC/IB=10/1 −0.01 −0.1 −1 EMITTER CURRENT : IE (A) Fig.8 Ground emitter propagation characteristics Fig.9 Transition frequency 100 Ta=25°C f=1MHz 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance zSwitching characteristics measurement circuits RL=50Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1