1.5V Drive Pch +SBD MOSFET TT8U1 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET / schottky barrier diode TSST8 zFeatures 1) Low On-resistance. 2) High Power Package. 3) Low voltage drive. (1.5V) (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : U01 Each lead has same dimensions zApplications Switching zInner circuit zPackaging specifications Package Type (8) (7) (6) (5) Taping TR Code Basic ordering unit (pieces) 3000 ∗1 TT8U1 (1) (2) ∗1 BODY DIODE zAbsolute maximum ratings (Ta=25°C) (3) (4) (1) Anode (2) Anode (3) Source (4) Gate (5) Drain (6) Drain (7) Cathode (8) Cathode <MOSFET> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗2 Limits −20 ±10 ±2.4 ±9.6 −0.8 −9.6 150 1.0 Unit V V A A A A °C W / ELEMENT Symbol VRM VR IF IFSM ∗1 Limits 30 20 1.0 3.0 150 1.0 Unit V V A A °C W / ELEMENT ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board <Di> Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation Tj PD ∗2 ∗1 60HZ / 1Cycle ∗2 Mounted on a ceramic board <MOSFET and Di> Parameter Symbol Total power dissipation Range of Storage temperature PD Tstg ∗ Limits Unit 1.25 −55 to +150 W / TOTAL °C ∗ Mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.06 - Rev.A Data Sheet TT8U1 zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − Static drain-source on-state − ∗ RDS (on) resistance − − Yfs ∗ 2.4 Forward transfer admittance Ciss − Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time tr ∗ − Turn-off delay time td (off) ∗ − Fall time tf ∗ − Total gate charge Qg ∗ − Gate-source charge Qgs ∗ Gate-drain charge − Qgd ∗ Typ. Max. − − − − 80 105 150 180 − 850 60 50 9 25 55 45 6.7 1.7 0.6 ±100 − −1 −1.0 105 140 225 360 − − − − − − − − − − − Unit nA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Min. Typ. Max. Unit − − −1.2 V Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −2.4A, VGS= −4.5V ID= −1.2A, VGS= −2.5V ID= −1.2A, VGS= −1.8V ID= −0.5A, VGS= −1.5V VDS= −10V, ID= −2.4A VDS= −10V VGS=0V f=1MHz VDD −10V VGS= −4.5V ID= −1.2A RL 8.3Ω RG=10Ω VDD −10V VGS= −4.5V ID= −2.4A RL 4.2Ω / RG=10Ω ∗Pulsed <MOSFET> Body diode (source-drain) Parameter Symbol Forward voltage VSD ∗ Conditions IS= −2.4A, VGS=0V ∗Pulsed <Di> Parameter Symbol Min. Typ. Max. Unit Forward voltage drop VF Reverse leakage IR − − 0.37 − 0.41 500 V µA www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IF= 1.0A VR=20V 2/5 2009.06 - Rev.A Data Sheet TT8U1 zElectrical characteristics curves 5 VGS= -10V VGS= -4.5V 4 VGS= -2.5V VGS= -1.8V 3 2 VGS= -1.5V 1 0 VGS= -4.5V 3 VGS= -2.5V VGS= -1.8V 2 0.2 0.4 0.6 0.8 1 0 Ta= 25°C Ta= - 25°C 0.1 Ta=25°C Pulsed 2 4 6 8 0.001 0 10 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.2 Typical output characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 10 100 10 1 10 DRAIN-CURRENT : -ID [A] 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 Resistance vs. Drain Current(Ⅲ) VGS= -1.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 10 0.1 1 10 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/5 10 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State VGS= -1.8V Pulsed 2 10 0.1 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta= 125°C Ta= 75°C DRAIN-SOURCE VOLTAGE : -VDS[V] Ta=25°C Pulsed 0.1 1 Fig.1 Typical output characteristics(Ⅰ) 100 1000 VDS= -10V Pulsed 0.01 VGS= -1.5V VGS= -1.4V 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 4 1 VGS= -1.4V 1000 10 VGS= -10V DRAIN CURRENT : -ID [A] Ta=25°C Pulsed DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 5 10 VDS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.06 - Rev.A Data Sheet TT8U1 10000 250 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 200 150 ID = -2.4A 100 ID = -1.2A 50 1 0 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 4 3 2 Ta=25°C VDD = -10V ID = -2.4A R G=10Ω Pulsed 0 10000 FORWARD CURRENT : IF[mA] 2 4 6 8 10000 0 2 4 10 6 td(on) 0.01 10 0.1 Ta=25°C f=1MHz VGS=0V Ciss 1000 Coss 100 Crss 10 8 0.01 0.1 1 10 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage 1 10 DRAIN-CURRENT : -ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 100 GATE-SOURCE VOLTAGE : -VGS[V] 5 R G=10Ω Pulsed td (off) tf tr 100 Fig.12 Switching Characteristics 100 REVERSE CURRENT : IR [mA] 0.5 1000 1 0 0.01 0 Ta=25°C VDD = -10V VGS= -4.5V Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 pulsed Ta = 125℃ 10 1 Ta = 75℃ 0.1 Ta = 25℃ 0.01 0.001 Ta= - 25℃ 0.0001 0 10 20 30 40 REVERSE VOLTAGE : VR [V] Fig.15 Reverse Current vs. Reverse Voltage pulsed 1000 100 Ta = 125℃ Ta = 75℃ Ta= 25℃ 10 Ta= - 25℃ 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.16 Forward Current vs. Forward Voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.06 - Rev.A Data Sheet TT8U1 zMeasurement circuits Pulse width ID VGS VDS VGS 10% 50% RL D.U.T. RG 90% 50% 10% VDD VDS 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID Qg VDS VGS RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore ; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. 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