2.5V Drive Nch MOSFET QS6K21 zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (6) 0.7 (4) 1.6 2.8 zFeatures 1) Low on-state resistance with fast switching. 2) Low voltage drive (2.5V). (5) 0.85 (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : K21 zInner circuit zApplication Switching (5) (6) (5) ∗2 ∗2 zPackaging specifications Package Taping TR Code Type Basic ordering unit (pieces) 3000 ∗1 ∗1 QS6K21 (1) ∗1 ESD protection diode ∗2 Body diode (2) (3) (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain−source voltage VDSS 45 V Gate−source voltage VGSS 12 V ±1.0 A ±2.0 A 0.8 A 2.0 A Parameter Drain current Source current (Body diode) Continuous ID Pulsed IDP ∗1 Continuous IS Pulsed ISP ∗1 PD ∗2 Total power dissipation 1.25 0.9 W / TOTAL W / ELEMENT Channel temperature Tch 150 °C Range of Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 100 139 Unit °C / W / TOTAL °C / W / ELEMENT ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.03 - Rev.A QS6K21 Data Sheet zElectrical characteristics (Ta=25°C) Symbol Parameter Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. Typ. Max. − 45 − 0.5 − − − 1.2 − − − − − − − − − − − − − − 300 310 415 − 95 20 10 6 8 16 7 1.5 0.4 0.4 10 − 1 1.5 420 435 585 − − − − − − − − 2.1 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID=1mA, VGS=0V VDS=45V, VGS=0V VDS=10V, ID=1mA ID=1.0A, VGS=4.5V ID=1.0A, VGS=4.0V ID=1.0A, VGS=2.5V VDS=10V, ID=1A VDS=10V VGS=0V f=1MHz VDD 25V ID=0.5A VGS=4.5V RL 50Ω RG=10Ω VDD 25V, ID=1.0A VGS=4.5V RL 25Ω, RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − 1.2 V Conditions IS= 0.8A, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.03 - Rev.A QS6K21 Data Sheet zElectrical characteristics curves 0.6 VGS= 1.8V 0.4 0.2 0.6 VGS= 1.8V 0.4 0.2 VGS= 1.5V 0 0.8 1 2 Fig.2 Typical Output Characteristics(Ⅱ) 100 0.01 10000 0.1 1 100 0.01 0.1 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 10 100 0.01 0.1 Fig.8 Forward Transfer Admittance vs. Drain Current 3/4 10 Resistance vs. Drain Current(Ⅲ) Ta= -25°C Ta=25°C Ta=75°C Ta=125°C DRAIN-CURRENT : ID [A] 1 DRAIN-CURRENT : ID [A] 1 1 2.5 Fig.6 Static Drain-Source On-State 10 0.1 2 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 10 VDS= 10V Pulsed 0.1 0.01 1.5 VGS= 4.0V Pulsed Resistance vs. Drain Current(Ⅱ) 10 1 Fig.3 Typical Transfer Characteristics DRAIN-CURRENT : ID [A] VGS= 2.5V Pulsed 1 1 0.5 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 0 GATE-SOURCE VOLTAGE : VGS[V] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : ID [A] 1000 0.01 10000 1000 10 Ta= 75°C Ta= 25°C Ta= - 25°C 10 VGS= 4.5V Pulsed Fig.4 Static Drain-Source On-State STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 8 Fig.1 Typical Output Characteristics(Ⅰ) VGS= 2.5V VGS= 4.0V VGS= 4.5V 100 0.01 6 DRAIN-SOURCE VOLTAGE : VDS[V] 1000 10000 4 DRAIN-SOURCE VOLTAGE : VDS[V] Ta= 25°C Pulsed Ta= 125°C 0.1 0.001 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.6 1 REVERSE DRAIN CURRENT : Is [A] 0.4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 VDS= 10V Pulsed VGS= 1.5V 0 0 10000 10 Ta=25°C Pulsed VGS= 4.5V VGS= 2.5V 0.8 DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 0.8 1 Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V DRAIN CURRENT : ID [A] 1 10 VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2009.03 - Rev.A QS6K21 Data Sheet 800 ID = 0.5A 600 ID = 1.0A 400 td (off) tf 100 10 200 td(on) 0 2 4 6 8 10 0.1 1 10 DRAIN-CURRENT : ID [A] GATE-SOURCE VOLTAGE : VGS[V] Ta=25°C f=1MHz VGS=0V 5 4 3 2 Ta=25°C VDD = 25V ID = 1.0A RG=10Ω Pulsed 1 0 0.01 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 tr 1 0 CAPACITANCE : C [pF] Ta=25°C VDD = 25V VGS=4.5V R G=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] 1000 Ta=25°C Pulsed SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 1000 0 0.5 1 1.5 2 TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics Ciss 100 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuits VGS ID Pulse Width VDS RL D.U.T. 90% 50% 10% VGS VDS 50% 10% 10% VDD RG 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2 Switching Waveforms VG ID VDS Qg VGS D.U.T. RG tf toff RL IG(Const.) 90% td(off) tr VDD Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.2-2 Gate Charge Waveform 4/4 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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