-100mA / -50V Digital transistor (with built-in resistors) DTA125TUA / DTA125TKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTA125TUA 2.0 0.9 0.7 0.2 0.3 Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3)Only the on / off conditions need to be set for operation, making the device design easy. 4)Higher mounting densities can be achieved. 2.1 1.25 (3) 0.1Min. (1) (2) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 Abbreviated symbol : 9A DTA125TKA Structure PNP epitaxial planar silicon transistor (Resistor built-in type) 2.9 (1) Emitter (2) Base (3) Collector Each lead has same dimensions 1.1 0.4 0.8 1.6 2.8 (3) Package Packaging type Code Part No. Basic ordering unit (pieces) DTA125TUA DTA125TKA (2) UMT3 SMT3 Taping Taping T146 T106 3000 3000 (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : 9A 0.3Min. Packaging specifications (1) Emitter (2) Base (3) Collector Each lead has same dimensions − − Inner circuit C B R1 E E : Emitter C : Collector B : Base R1=200kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTA125TUA / DTA125TKA Data Sheet Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage Parameter VCBO VCEO −50 −50 V V Emitter-base voltage Collector current Collector power dissipation Junction temperature VEBO IC −5 −100 V mA Pc 200 mW Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO − − − − V V IC= −50μA IC= −1mA Emitter-base breakdown voltage Collector cutoff current BVEBO −50 −50 −5 Conditions − − V IE= −50μA ICBO − − μA VCB= −50V IEBO − −0.5 −0.5 μA VEB= −4V VCE(sat) − − − IC= −0.5mA , IB= −0.05mA hFE 100 250 −0.3 600 V DC current transfer ratio − IC= −1mA , VCE= −5V Input resistance R1 fT ∗ 140 − 200 250 260 − kΩ MHz Emitter cutoff current Collector-emitter saturation voltage Transition frequency − VCE= −10V , IE=5mA , f=100MHz ∗ Characteristics of built-in transistor 1k VCE=5V Ta=100°C DC CURRENT GAIN : hFE 500 Ta=25°C 200 Ta= −40°C 100 50 20 10 5 2 1 10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves 1 IC/IB=10/1 500m 200m Ta=100°C 100m Ta=25°C 50m Ta= −40°C 20m 10m 5m 2m 1m 10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/2 2009.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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