20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES

HVGT
JB99
20mA 20kV HIGH VOLTAGE, SILICON RECTIFIER DIODES
Outline Drawings : mm
is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
JB99
DO-415
Cathode Mark
Lot No.
o 4.2
Features
o 0.8
High speed switching
High Current
High surge resisitivity for CRT discharge
25 min.
15
25 min.
High reliability design
High Voltage
Cathode Mark
Applications
X light Power supply
Type
Mark
JB99
HVGT
JB99
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
JB99
Units
20
kV
20
mA
I FSM
1.5
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
120
°C
Storage Temperature
Tstg
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
V RRM
IO
Ta=25°C,Resistive Load
-40 to +125
°C
Conditions
JB99
Units
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
40
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
3.0
uA
IR2
at 100°C,V R =VRRM
30
uA
Maximum Reverse Recovery Time
Trr
at 25°C
100
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
1.0
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2014