30kV 10mA HIGH VOLTAGE DIODES

HVGT
G30FP
30kV 10mA HIGH VOLTAGE DIODES
Outline Drawings : mm
G30FP is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Cathode Mark
Lot No.
o 3.0
o 0.6
Features
High speed switching
High Current
27 min.
High surge resisitivity for CRT discharge
High reliability design
High Voltage
12
27 min.
DO-312
Cathode Mark
Applications
X light Power supply
Type
Mark
G30FP
G30FP
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
G30FP
Units
30
kV
10
mA
I FSM
0.8
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
120
°C
Storage Temperature
Tstg
-40 to +125
°C
Conditions
G30FP
Units
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
V RRM
IO
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
55
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
2.0
uA
IR2
at 100°C,V R =VRRM
5.0
uA
Maximum Reverse Recovery Time
Trr
at 25°C
100
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2014