4.0kV 0.8A HIGH VOLTAGE DIODES

HVGT
BR4F
4.0kV 0.8A HIGH VOLTAGE DIODES
Outline Drawings : mm
BR4F is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
DO-590
Cathode Mark
Lot No.
o 5.0
Features
o 1.28
High speed switching
High Current
High surge resisitivity for CRT discharge
27 min.
9.0
27 min.
High reliability design
High Voltage
Cathode Mark
Applications
X light Power supply
Type
Laser
Mark
Voltage doubler circuit
BR4F
Microwave emission power
BR4F
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
BR4F
Units
4.0
kV
0.8
A peak
I FSM
20
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
Tstg
-40 to +125
°C
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
V RRM
IO
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
BR4F
Units
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
11
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
IR2
at 100°C,V R =VRRM
50
uA
Maximum Reverse Recovery Time
Trr
at 25°C
150
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2014