Preliminary Datasheet RQK2501YGDQA R07DS0312EJ0300 (Previous: REJ03G1521-0200) Rev.3.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 G 1 1. Source 2. Gate 3. Drain 2 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID(pulse) IDR Pch Note2 Tch Tstg Ratings 250 ±10 0.4 1.6 0.4 0.8 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 Page 1 of 7 RQK2501YGDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 250 +10 –10 — — — 0.5 — — 0.6 — — — — — — — Typ — — — — — — — 4.0 4.1 0.95 80 10 3 15 16 40 38 Max — — — +10 –10 1 1.5 5.4 5.6 — — — — — — — — Unit V V V μA μA μA V Ω Ω S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Qg Qgs Qgd VDF — — — — 4.0 0.5 2.6 0.8 — — — 1.2 nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = +100 μA, VDS = 0 IG = –100 μA, VDS = 0 VGS = +8 V, VDS = 0 VGS = –8 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.2 A, VGS =4 V Note3 ID = 0.2 A, VGS = 2.5 V Note3 ID = 0.2 A, VDS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz VDD = 125 V,VGS = 4 V ID = 0.2 A RL = 625 Ω Rg = 10 Ω VDD = 200 V VGS = 4 V ID = 0.4 A IF = 0.4 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 Page 2 of 7 RQK2501YGDQA Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 10 Channel Dissipation Pch (W) 1.0 Operation in this area is limited by RDS(on) Drain Current ID (A) 0.8 0.6 0.4 0.2 10 μs 1 10 0 1 10 0.1 DC μs m s m s 10 0 m s Op er 0.01 at ion Ta = 25°C 1 Shot Pulse 0 0.001 0 25 50 75 100 125 150 1 Ambient Temperature Ta (°C) 1000 100 10 Drain to Source Voltage VDS (V) *When using the glass epoxy board (FR-4 40 x 40 x 1 mm) Typical Transfer Characteristics (1) Typical Output Characteristics 1.6 1.6 Drain Current ID (A) 1.4 1.2 2.2 V 2.5 V 2.0 V 1.0 1.8 V 0.8 Pulse Test Tc = 25°C 0.6 1.6V 0.4 1.4V 0.2 0 8 4 12 16 1.2 1.0 0.8 0.6 0.4 Tc = 75°C 25°C 0.2 –25°C VGS = 0V 0 VDS = 10 V Pulse Test 1.4 Drain Current ID (A) 4V 7V 10 V 0 20 Drain to Source Voltage VDS (V) 0 1 2 3 4 Gate to Source Voltage VGS (V) 0.1 Drain Current ID (A) VDS = 10 V Pulse Test 0.01 Tc = 75°C 0.001 25°C 0.0001 –25°C 0.00001 0 0.5 1 1.5 Gate to Source Voltage VGS (V) R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 2 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 2.0 1.5 ID = 10 mA 1.0 1 mA 0.5 0.1 mA VDS = 10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 7 RQK2501YGDQA Preliminary Pulse Test Tc = 25°C 2.5 2.0 0.4 A 1.5 1.0 0.2 A 0.5 0.1 A 0 0 2 4 6 8 Drain to Source on State Resistance RDS(on) (Ω) 3.0 Static Drain to Source on State Resistance vs. Drain Current 10 100 Pulse Test Tc = 25°C 10 VGS = 2.5 V 4.5 V 10 V 1 0.1 1 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Static Drain to Source on State Resistance vs. Case Temperature (2) Drain to Source on State Resistance RDS(on) (Ω) Gate to Source Voltage VGS (V) 10 8 ID = 0.4 A 6 0.2 A 4 0.1 A 2 0 Pulse Test VGS = 4 V –25 0 25 50 75 100 125 150 6 0.1A 4 0.2 A 2 0 –25 0 25 50 75 100 125 150 Zero Gate Voltage Drain current vs. Case Temperature –25°C 25°C 0.01 0.01 ID = 0.4 A 8 Forward Transfer Admittance vs. Drain Current Pulse Test VDS = 10 V 0.1 Pulse Test VGS = 2.5 V Case Temperature Tc (°C) 10 1 10 Case Temperature Tc (°C) Tc = 75°C 0.1 1 Drain Current ID (A) R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 1 Pulse Test VGS = 0 V VDS = 250 V 0.1 0.01 0.001 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 7 RQK2501YGDQA Preliminary Switching Characteristics 12 VDD = 50 V 100 V 200 V 200 ID = 0.4 A 10 Tc = 25°C 8 6 4 100 VDD = 200 V 100 V 50 V 0 0 4 6 2 0 10 8 1000 Switching Time t (ns) 300 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics tf 100 tr td(off) td(on) 10 0.01 0.1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 420 VGS = 0 V f = 1 MHz 380 Ciss 340 Ciss (pF) 100 10 300 260 Coss 220 VDS = 0 f = 1MHz Crss 1 0 30 60 90 120 2 4 6 8 10 Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 1.2 1.0 0.8 VGS = 0, –2.5, –4, –10 V 0.6 0.4 2.5, 4, 10 V Pulse Test 0.2 Tc = 25°C 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current IDR (A) 0 Drain to Source Voltage VDS (V) 1.4 0 180 –10 –8 –6 –4 –2 150 1.6 0 10 1 Gate Charge Qg (nc) 1000 Ciss, Coss, Crss (pF) VGS = 4 V, VDD = 125 V Rg = 10 Ω, duty ≤ 1 % Tc = 25°C 0.7 VGS = 0 0.6 ID = 10 mA 0.5 0.4 0.3 1 mA 0.2 0.1 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 7 RQK2501YGDQA Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 *When using the glass epoxy board (FR-4 40 x 40 x 1 mm) Ta = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 θch – a(t) = γs (t) • θch – a θch – a = 156°C/W, Ta = 25°C 0.02 0.01 0.01 lse t pu PDM o 1sh 0.001 10 μ PW T PW T 100 μ 1m 10 m 100 m Pulse Width 1 10 100 1000 PW (s) Switching Time Test Circuit Switching Time Waveform 90% Vout Monitor Vin Monitor Rg D= D.U.T. RL Vin Vout Vin 4V VDD = 125 V 10% 10% 90% td(on) R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 10% tr 90% td(off) tf Page 6 of 7 RQK2501YGDQA Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 1.1 0.25 0.4 0.16 0.35 0.1 2.7 1.35 1.5 0.95 2.8 2.2 0.35 0.15 0.25 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number RQK2501YGDQATL-E RQK2501YGDQATL-H R07DS0312EJ0300 Rev.3.00 Mar 28, 2011 Quantity 3000 pcs. Shipping Container φ178 mm reel, 8 mm Emboss taping Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. 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