ESJC60S08

HVGT
ESJC60S08
600mA 8kV HIGH VOLTAGE DIODES
Outline Drawings : mm
Finds use in applications such as Monitors,
Static electricity dust collectors,Laser power
supplies,ect..
Cathode Mark
Lot No.
o 7.0
o 1.28
Features
High speed switching
High Current
24 min.
High surge resisitivity for CRT discharge
High reliability design
High Voltage
21
24 min.
DO-721
Cathode Mark
Applications
X light Power supply
Type
Mark
Laser
Voltage doubler circuit
Microwave emission power
HVGT
ESJC60S08
ESJC60S08
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
ESJC60S08
Units
8.0
kV
600
mA
I FSM
30
A peak
Junction Temperature
Tj
120
°C
Allowable Operation Case Temperature
Tc
120
°C
Storage Temperature
Tstg
-40 to +125
°C
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
V RRM
IO
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
ESJC60S08
Units
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
10
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
IR2
at 100°C,V R =VRRM
50
uA
Maximum Reverse Recovery Time
Trr
at 25°C
--
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2015