ESJC13-12

HVGT
ESJC13-12
350mA 12kV HIGH VOLTAGE DIODES
Outline Drawings : mm
Finds use in applications such as Monitors,
Static electricity dust collectors,Laser power
supplies,ect..
Cathode Mark
Lot No.
o 7.0
o 1.28
Features
High speed switching
High Current
20 min.
High surge resisitivity for CRT discharge
High reliability design
High Voltage
21
20 min.
DO-721
Cathode Mark
Applications
X light Power supply
Type
Mark
ESJC13-12
ESJC13
-12
Laser
Voltage doubler circuit
Microwave emission power
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Symbols
Condition
ESJC13-12
Units
12
kV
350
mA
I FSM
30
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
Tstg
-40 to +130
°C
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
V RRM
IO
Ta=25°C,Resistive Load
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
ESJC13-12
Conditions
Units
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
11
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
IR2
at 100°C,V R =VRRM
50
uA
Maximum Reverse Recovery Time
Trr
at 25°C
--
nS
Junction Capacitance
Cj
at 25°C,VR=0V,f=1MHz
--
pF
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2014