RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 zApplications Switching Each lead has same dimensions Abbreviated symbol : QQ zPackaging specifications zInner circuit Package Type (6) Taping (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RSQ020N03 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 20 ±2.0 ±8.0 1.0 8.0 1.25 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Rev.A 1/4 RSQ020N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 30 − 1.0 − − − 1.5 − − − − − − − − − − Typ. Max. − − − − 96 148 168 − 110 40 22 7 9 16 4 2.2 0.7 0.6 10 − 1 2.5 134 207 235 − − − − − − − − 3.1 − − Conditions Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 2.0A, VGS= 10V ID= 2.0A, VGS= 4.5V ID= 2.0A, VGS= 4V VDS= 10V, ID= 2.0A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1A VGS= 10V RL=15Ω RG=10Ω VDD 15V VGS= 5V ID= 2.0A RL= 7.5Ω RG=10Ω Unit V IS= 1.0A, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol Min. Typ. Max. VSD − − 1.2 Conditions Rev.A 2/4 RSQ020N03 Transistors zElectrical characteristics curves 1000 Coss 100 tf td (off) 10 td (on) tr Crss 1 10 1 0.01 100 Fig.1 Typical Capacitance vs. Drain-Source Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 DRAIN CURRENT : ID (A) VDS=10V Pulsed 1 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 1.0 1.5 2.0 2.5 3.0 100 10 0.01 0.1 1 10 DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) 7 6 5 4 3 2 1 10 0 1 2 3 4 5 DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 VGS= 0V Pulsed Ta=25°C Pulsed 800 700 600 ID=2.0A 500 400 300 ID=1.0A 200 1 Ta=125°C 75°C 25°C −25°C 0.1 100 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0.01 0.0 Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 VGS= 4.5V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain current ( ΙΙ ) 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : −RDS (on) (mΩ) Ta=125°C 75°C 25°C −25°C ID= 2.0A 8 RG=10Ω Pulsed 1000 Fig.4 Typical Transfer Characteristics VGS= 10V Pulsed 1 900 GATE-SOURCE VOLTAGE : VGS (V) 1000 9 VDD= 15V 0 0.1 DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE CURRENT : IS (A) 10 0.1 Ta=25°C GATE-SOURCE VOLTAGE : VGS (V) Ciss Ta=25°C VDD= 15V VGS= 4.5V RG=10Ω Pulsed Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 10 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25°C f=1MHz VGS=0V 1000 VGS= 4V Pulsed Ta=125°C 75°C 25°C −25°C 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.9 Static Drain-Source On-State Resistance vs. Drain current ( ΙΙΙ ) Rev.A 3/4 RSQ020N03 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Transistors 1000 Ta=25°C Pulsed VGS= 4.0V 4.5V 10V 100 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1