Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 (Previous: REJ03G1567-0100) Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK) 3 3 2 1 1. Gate 2. Source 3. Drain 4. Source 1 4 2, 4 Note: Marking is “LX”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID Pchnote Tch Ratings 16 ±5 0.3 3 150 Unit V V A W C Tstg –50 to +150 C Value at Tc = 25C This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 Page 1 of 14 RQA0004LXAQS Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout Power Added Efficiency Output Power PAE Pout Power Added Efficiency Output Power PAE Pout Power Added Efficiency PAE Min. — — 0.3 — — — — — — — — — — — — — Typ — — 0.6 0.43 10 5 0.4 25.1 0.33 65 26.6 0.46 71 29.7 0.93 68 Max. 2 ±2 0.9 — — — — — — — — — — — — — Unit A A V S pF pF pF dBm W % dBm W % dBm W % Test Conditions VDS = 16 V, VGS = 0 VGS = ±5 V, VDS = 0 VDS = 6 V, ID = 1 mA VDS = 6 V, ID = 0.3 A VGS = 5 V, VDS = 0, f = 1 MHz VDS = 6 V, VGS = 0, f = 1 MHz VDG = 6 V, VGS = 0, f = 1 MHz VDS = 3.7 V, IDQ = 50 mA f = 174 MHz Pin = +13 dBm (20 mW) VDS = 3.7 V, IDQ = 50 mA f = 520 MHz Pin = +13 dBm (20 mW) VDS = 6 V, IDQ = 50 mA f = 520 MHz Pin = +13 dBm (20 mW) Main Characteristics Typical Output Characteristics 5 0.4 4 Drain Current ID (A) Channel Power Dissipation Pch (W) Maximum Channel Power Dissipation Curve 3 2 1 0 50 100 150 Case Temperature TC (°C) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 200 Pulse Test 1.75 V 2.0 V 0.3 1.5 V 0.2 1.25 V 0.1 0 VGS = 1.0 V 2 4 6 8 10 Drain to Source Voltage VDS (V) Page 2 of 14 RQA0004LXAQS Preliminary Forward Transfer Admittance vs. Drain Current 0.5 VDS = 6 V Pulse Test 0.4 |yfs| 0.3 0.2 ID 0.1 0 0.5 1.0 1.5 2.0 Forward transfer Admittance |yfs| (S) Drain Current ID (A) Forward transfer Admittance |yfs| (S) Typical Transfer Characteristics 0.1 0.1 0.01 1 Drain Current ID (A) Input Capacitance vs. Gate to Source Voltage Output Capacitance vs. Drain to Source Voltage 10 Output Capacitance Coss (pF) 10 8 6 4 2 VDS = 0 f = 1 MHz 0 -5 -4 -3 -2 -1 0 1 2 3 4 1 VGS = 0 f = 1 MHz 0.1 0.1 5 1 10 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Transfer Capacitance vs. Drain to Gate Voltage Maximum Stable Gain,|S21|2 vs. Frequency 10 1 VGS = 0 f = 1 MHz 0.1 0.1 1 Drain to Gate Voltage VDG (V) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 10 Maximum Stable Gain MSG (dB) Forward Transfer Coefficient |S21|2 (dB) Input Capacitance Ciss (pF) VDS = 6 V Pulse Test Gate to Source Voltage VGS (V) 12 Reverse Transfer Capacitance Crss (pF) 1 30 25 MSG 20 15 10 5 0 |S21|2 VDS = 6 V ID = 50 mA 500 1000 1500 2000 Frequency f (MHz) Page 3 of 14 RQA0004LXAQS Preliminary Evaluation Circuit 1 (@VDD = 3.7 V Tuning, f = 174 MHz) VGG C3 VDD C6 C4 C7 R2 C5 C2 L2 R1 50 Ω C1 50 Ω C9 C8 RF OUT L1 L3 RF IN C10 C1, C2, C5, C10: 100 pF Chip Capacitor C3, C7: 1000 pF Chip Capacitor C4, C6: 1 μF /+16V Chip Tantalum Capacitor C8, C9: 22 pF Chip Capacitor 33 nH Chip Inductor L2: 10 nH Chip Inductor L3: 5.6 nH Chip Inductor R1: 200 Ω Chip Resistor R2: 6.8 kΩ Chip Resistor Power Gain, Power Added Efficiency vs. Input Power Output Power, Drain Current vs. Input Power 0.3 35 25 0.25 30 20 0.2 15 0.15 10 0.1 VDS = 3.7V IDQ = 50 mA f = 174 MHz 5 0 -5 0 5 10 Input Power Pin (dBm) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 0.05 0 15 Power Gain PG (dB) ID (A) Pout Drain Current ID Output Power Pout (dBm) 30 70 60 PAE 25 50 20 40 PG 30 15 20 10 VDS = 3.7V IDQ = 50 mA f = 174 MHz 5 0 -5 0 5 10 10 0 15 Power Added Efficiency PAE (%) L1: Input Power Pin (dBm) Page 4 of 14 RQA0004LXAQS Preliminary 15 0.15 10 0.1 ID VDS = 3.7 V 0.05 IDQ = 50 mA Pin = +13 dBm 5 0 130 140 150 160 170 60 15 10 50 PG VDS = 3.7 V 40 IDQ = 50 mA Pin = +13 dBm 5 0 130 140 150 160 170 30 180 Output Power, Drain Current, vs. Drain to Source Voltage Power Gain, Power Added Efficiency, vs. Drain to Source Voltage 0.4 0.2 ID 10 0.1 IDQ = 50 mA f = 174 MHz Pin = +13 dBm Power Gain PG (dB) 20 (A) 0.3 Drain Current ID Pout 0 4 5 6 7 8 80 40 30 PAE 60 40 20 PG 10 20 IDQ = 50 mA f = 174 MHz Pin = +13 dBm 0 0 9 3 4 5 6 7 8 9 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Output Power, Drain Current, vs. Idling Current Power Gain, Power Added Efficiency, vs. Idling Current 40 30 0.3 Pout 20 0.2 ID 10 VDS = 3.7 V f = 174 MHz Pin = +13 dBm 0 50 100 150 200 250 Idling Current IDQ (mA) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 0.1 0 300 Power Gain PG (dB) 0.4 (A) Output Power Pout (dBm) PAE Frequency f (MHz) 30 0 70 20 Frequency f (MHz) 40 Output Power Pout (dBm) (A) 0 180 40 0 3 Power Gain PG (dB) 0.2 20 Drain Current ID 0.25 Drain Current ID Output Power Pout (dBm) Pout 25 80 25 80 PAE 30 60 VDS = 3.7 V f = 174 MHz Pin = +13 dBm 20 PG 10 0 50 100 150 40 20 0 200 250 Power Added Efficiency PAE (%) 0.3 30 Power Added Efficiency PAE (%) Power Gain, Power Added Efficiency, vs. Frequency 0 300 Power Added Efficiency PAE (%) Output Power, Drain Current vs. Frequency Idling Current IDQ (mA) Page 5 of 14 RQA0004LXAQS Preliminary Evaluation Circuit 2 (@VDD = 3.7 & 6.0V Tuning, f = 520 MHz) VGG C5 VDD C6 C11 C12 R1 C10 C4 L5 L3 50 Ω C1 C2 L1 C3 C13 C14 50 Ω L4 R2 L2 RF OUT RF IN C9 C7 C8 C1, C4, C10, C14: 100 pF Chip Capacitor 10 pF Chip Capacitor C3, C7: 2 pF Chip Capacitor C5, C12: 1000 pF Chip Capacitor C6, C11: 1 μF /+16V Chip Tantalum Capacitor C8: 2200 pF Chip Capacitor C9: 3 pF Chip Capacitor C13: 8 pF Chip Capacitor L1, L2, L4: 5.6 nH Chip Inductor L3: 27 nH Chip Inductor L5: 4Turns D : 0.5 mm, φ2.4 mm Enamel Wire R1: 6.8k Ω Chip Resistor R2: 180 Ω Chip Resistor Power Gain, Power Added Efficiency vs. Input Power Output Power, Drain Current vs. Input Power 40 0.3 80 0.25 20 0.2 ID 15 0.15 10 0.1 VDS = 3.7V IDQ = 50 mA f = 520 MHz 5 0 -5 0 5 10 Input Power Pin (dBm) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 0.05 0 15 Power Gain PG (dB) 25 (A) Pout Drain Current ID Output Power Pout (dBm) 30 PAE 30 60 PG 20 10 VDS = 3.7V IDQ = 50 mA f = 520 MHz 0 -5 0 5 10 40 20 0 15 Power Added Efficiency PAE (%) C2: Input Power Pin (dBm) Page 6 of 14 RQA0004LXAQS Preliminary 0.2 15 0.15 ID 0.1 10 VDS = 3.7 V 0.05 IDQ = 50 mA Pin = +13 dBm 0 530 540 550 5 0 500 510 520 (A) 15 60 PG 10 50 VDS = 3.7 V IDQ = 50 mA Pin = +13 dBm 5 0 500 510 520 530 540 40 30 550 Output Power, Drain Current, vs. Drain to Source Voltage Power Gain, Power Added Efficiency, vs. Drain to Source Voltage 0.4 0.2 ID 10 0.1 IDQ = 50 mA f = 520 MHz Pin = +13 dBm (A) Power Gain PG (dB) 20 0.3 Drain Current ID Pout 30 0 4 5 6 7 8 80 40 PAE 30 60 20 40 10 0 9 IDQ = 50 mA 20 f = 520 MHz Pin = +13 dBm PG 0 3 4 5 6 7 8 9 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Output Power, Drain Current, vs. Idling Current Power Gain, Power Added Efficiency, vs. Idling Current 40 0.4 80 Pout 30 0.3 20 0.2 ID 10 0.1 VDS = 3.7 V f = 520 MHz Pin = +13 dBm 0 0 50 100 150 200 250 Idling Current IDQ (mA) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 0 300 Power Gain PG (dB) PAE (A) Output Power Pout (dBm) 70 Frequency f (MHz) 40 Output Power Pout (dBm) 20 Frequency f (MHz) 40 0 3 Power Gain PG (dB) 20 PAE Drain Current ID 0.25 Pout Drain Current ID Output Power Pout (dBm) 25 80 25 30 60 20 40 PG 10 20 VDS = 3.7 V f = 520 MHz Pin = +13 dBm 0 0 50 100 150 200 250 Power Added Efficiency PAE (%) 0.3 30 Power Added Efficiency PAE (%) Power Gain, Power Added Efficiency, vs. Frequency 0 300 Power Added Efficiency PAE (%) Output Power, Drain Current vs. Frequency Idling Current IDQ (mA) Page 7 of 14 RQA0004LXAQS Preliminary 0.2 10 0.1 VDS = 6V IDQ = 50 mA f = 520 MHz -5 0 5 0 15 10 60 PG 40 20 10 20 VDS = 6V IDQ = 50 mA f = 520 MHz 0 15 0 -5 0 5 10 Input Power Pin (dBm) Output Power, Drain Current vs. Frequency Power Gain, Power Added Efficiency, vs. Frequency 0.4 ID 0.1 10 VDS = 6 V IDQ = 50 mA Pin = +13 dBm 510 520 530 540 Power Gain PG (dB) 20 0.2 (A) 0.3 Drain Current ID Pout 30 80 25 0 550 20 70 PAE PG 15 60 50 10 VDS = 6 V IDQ = 50 mA Pin = +13 dBm 5 0 500 510 520 530 540 40 30 550 Frequency f (MHz) Frequency f (MHz) Output Power, Drain Current, vs. Idling Current Power Gain, Power Added Efficiency, vs. Idling Current 40 40 0.4 80 Pout 30 0.3 ID 20 0.2 10 VDS = 6 V f = 520 MHz Pin = +13 dBm 0 0 50 100 150 200 250 Idling Current IDQ (mA) R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 0.1 0 300 Power Gain PG (dB) PAE (A) Output Power Pout (dBm) PAE 30 Input Power Pin (dBm) 40 0 500 80 30 60 20 40 PG 20 VDS = 6V f = 520 MHz Pin = +13 dBm 10 0 0 50 100 150 200 250 0 300 Power Added Efficiency PAE (%) 20 Power Gain PG (dB) ID (A) 0.3 Pout Drain Current ID 30 0 Output Power Pout (dBm) 40 0.4 Drain Current ID Output Power Pout (dBm) 40 Power Added Efficiency PAE (%) Power Gain, Power Added Efficiency vs. Input Power Power Added Efficiency PAE (%) Output Power, Drain Current vs. Input Power Idling Current IDQ (mA) Page 8 of 14 RQA0004LXAQS Preliminary S Parameter (VDS = 3.6 V, IDQ = 50 mA, Zo = 50 ) S11 ANG (deg.) -40.3 -58.4 -74.0 -87.5 -99.2 -108.7 -116.8 -122.6 -128.2 -132.4 -136.4 -140.2 -143.7 -147.1 -150.0 -152.7 MAG 0.021 0.029 0.034 0.037 0.038 0.039 0.040 0.040 0.040 0.040 0.039 0.038 0.038 0.037 0.036 0.035 S12 ANG (deg.) 69.4 46.8 36.1 27.8 20.8 14.1 8.9 4.0 -0.9 -4.6 -8.2 -11.5 -14.5 -17.6 -20.5 -23.1 MAG 0.784 0.744 0.700 0.657 0.640 0.615 0.601 0.595 0.595 0.596 0.602 0.608 0.616 0.626 0.634 0.643 S22 ANG (deg.) -30.2 -51.2 -66.0 -77.8 -86.9 -94.4 -100.8 -106.1 -110.9 -115.2 -119.1 -122.7 -125.9 -129.2 -132.1 -134.9 f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 MAG 0.946 0.931 0.898 0.865 0.856 0.827 0.812 0.804 0.792 0.791 0.790 0.787 0.787 0.788 0.792 0.797 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 0.801 0.807 0.812 0.817 0.827 0.834 0.840 0.846 0.845 0.839 0.843 0.847 0.850 0.852 0.858 0.861 0.863 0.863 0.873 0.878 0.886 0.895 0.894 0.895 0.890 0.890 0.896 0.898 -155.2 -157.3 -159.4 -161.7 -163.5 -165.6 -167.1 -168.4 -170.1 -171.7 -173.8 -175.4 -177.1 -179.0 179.6 178.3 176.8 174.8 173.0 171.4 170.2 168.9 168.2 167.3 165.8 164.0 162.6 161.1 4.54 4.29 4.06 3.83 3.62 3.42 3.24 3.06 2.89 2.73 2.59 2.47 2.34 2.24 2.13 2.05 1.96 1.88 1.81 1.75 1.68 1.61 1.55 1.48 1.42 1.37 1.32 1.27 54.7 51.4 48.8 46.1 43.7 41.0 38.6 36.3 33.7 31.2 28.6 26.3 24.0 21.8 19.7 17.6 15.4 13.1 10.9 9.0 7.3 5.5 4.2 2.7 0.9 -1.1 -3.1 -5.2 0.034 0.033 0.032 0.031 0.030 0.028 0.027 0.026 0.025 0.024 0.023 0.022 0.020 0.019 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.009 0.009 0.008 -25.1 -27.5 -29.7 -31.6 -33.7 -35.1 -36.6 -38.2 -39.6 -40.9 -41.9 -43.0 -43.9 -44.6 -44.7 -45.2 -45.3 -44.9 -44.9 -43.7 -42.9 -41.0 -38.6 -35.6 -33.6 -29.1 -24.1 -19.0 0.654 0.664 0.675 0.686 0.695 0.704 0.714 0.723 0.733 0.740 0.749 0.755 0.760 0.768 0.774 0.777 0.784 0.792 0.798 0.800 0.807 0.816 0.818 0.822 0.830 0.837 0.838 0.842 -137.6 -140.2 -142.8 -145.3 -147.5 -149.8 -152.0 -154.0 -156.0 -158.1 -160.2 -161.9 -164.0 -166.0 -167.8 -169.6 -171.7 -173.6 -175.3 -177.3 -179.3 179.1 177.6 175.6 173.8 172.3 170.7 168.9 2300 2350 2400 2450 2500 0.902 0.903 0.901 0.895 0.894 159.8 158.4 157.4 155.9 154.0 1.22 1.19 1.15 1.11 1.07 -7.1 -9.0 -11.0 -12.6 -14.4 0.008 0.008 0.008 0.008 0.008 -12.8 -8.3 -3.0 2.0 6.9 0.848 0.851 0.852 0.855 0.861 167.1 165.8 164.1 162.4 160.9 R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 MAG 15.41 12.58 11.57 11.08 10.15 9.91 9.44 8.78 8.15 7.55 7.00 6.48 6.03 5.59 5.22 4.86 S21 ANG (deg.) 148.7 136.4 126.4 117.4 109.2 102.2 95.7 90.2 84.9 80.5 76.4 72.3 68.5 64.9 61.3 58.0 Page 9 of 14 RQA0004LXAQS Preliminary S Parameter (VDS = 6 V, IDQ = 10 mA, Zo = 50 ) S11 ANG (deg.) -34.4 -49.5 -63.2 -74.6 -85.3 -93.6 -101.5 -108.4 -114.4 -119.5 -124.3 -128.6 -132.8 -136.7 -140.2 -143.5 MAG 0.022 0.031 0.038 0.043 0.046 0.048 0.050 0.051 0.051 0.051 0.050 0.050 0.048 0.047 0.046 0.045 S12 ANG (deg.) 69.9 54.5 43.4 34.8 26.8 19.3 12.6 6.6 0.9 -3.9 -8.5 -12.8 -16.7 -20.3 -23.9 -27.1 MAG 0.869 0.858 0.823 0.801 0.788 0.773 0.759 0.754 0.749 0.747 0.750 0.752 0.755 0.761 0.767 0.772 S22 ANG (deg.) -20.3 -35.1 -45.4 -54.6 -62.5 -70.0 -77.0 -83.0 -88.6 -93.9 -98.8 -103.3 -107.5 -111.6 -115.4 -119.2 f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 MAG 0.973 0.931 0.913 0.896 0.892 0.878 0.870 0.861 0.853 0.853 0.851 0.845 0.844 0.846 0.849 0.853 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 0.857 0.860 0.867 0.870 0.875 0.883 0.888 0.890 0.890 0.886 0.886 0.886 0.889 0.891 0.895 0.898 0.896 0.897 0.903 0.911 0.917 0.926 0.928 0.925 0.918 0.916 0.918 0.922 -146.4 -149.0 -151.5 -154.0 -156.5 -158.7 -161.0 -162.5 -164.5 -166.6 -168.7 -170.8 -172.6 -174.5 -176.1 -177.6 -179.5 178.5 176.4 174.8 173.4 172.0 171.1 170.1 168.7 166.8 165.3 163.6 2.78 2.59 2.44 2.30 2.15 2.03 1.92 1.79 1.69 1.59 1.51 1.43 1.36 1.29 1.23 1.18 1.12 1.08 1.03 0.99 0.95 0.91 0.87 0.83 0.80 0.76 0.73 0.71 53.9 50.1 47.2 44.3 41.4 38.5 35.9 33.4 30.7 27.7 25.2 22.9 20.3 18.1 15.9 13.7 11.4 9.3 7.0 4.9 3.2 1.5 0.2 -1.5 -3.3 -5.3 -7.4 -9.4 0.043 0.042 0.041 0.039 0.037 0.036 0.034 0.033 0.031 0.030 0.028 0.027 0.025 0.024 0.022 0.021 0.020 0.019 0.017 0.016 0.015 0.014 0.012 0.011 0.010 0.009 0.008 0.007 -29.8 -32.9 -35.5 -38.2 -40.8 -43.1 -45.2 -47.4 -49.1 -51.1 -52.6 -54.4 -56.0 -57.4 -58.5 -59.9 -60.8 -61.8 -62.7 -62.8 -63.2 -63.2 -63.1 -61.7 -60.9 -59.1 -55.0 -52.5 0.778 0.785 0.792 0.798 0.805 0.811 0.818 0.823 0.830 0.834 0.840 0.843 0.846 0.851 0.855 0.855 0.859 0.866 0.869 0.869 0.874 0.881 0.879 0.883 0.888 0.894 0.894 0.895 -122.7 -126.1 -129.4 -132.5 -135.5 -138.4 -141.1 -143.7 -146.2 -148.7 -151.2 -153.3 -155.9 -158.2 -160.3 -162.4 -164.7 -166.9 -168.8 -171.0 -173.3 -175.1 -176.8 -179.1 179.0 177.4 175.6 173.6 2300 2350 2400 2450 2500 0.921 0.923 0.920 0.913 0.911 162.2 160.6 159.7 158.0 156.0 0.68 0.65 0.63 0.61 0.59 -11.4 -13.3 -15.2 -16.8 -18.6 0.007 0.006 0.006 0.005 0.005 -46.3 -40.6 -33.7 -24.3 -14.3 0.900 0.902 0.902 0.902 0.907 171.8 170.3 168.5 166.6 164.9 R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 MAG 12.25 11.13 10.12 9.10 8.08 7.27 6.56 5.95 5.40 4.91 4.50 4.15 3.79 3.48 3.22 2.99 S21 ANG (deg.) 150.2 138.3 128.8 120.5 113.3 107.0 100.5 94.8 89.2 84.0 79.0 74.4 70.0 65.6 61.6 57.7 Page 10 of 14 RQA0004LXAQS Preliminary S Parameter (VDS = 6 V, IDQ = 25 mA, Zo = 50 ) S11 ANG (deg.) -37.1 -53.7 -68.0 -80.1 -90.8 -99.6 -107.8 -114.7 -120.7 -125.9 -130.4 -134.3 -138.3 -142.1 -145.5 -148.4 MAG 0.021 0.030 0.034 0.038 0.040 0.042 0.043 0.044 0.044 0.043 0.043 0.042 0.041 0.040 0.040 0.039 S12 ANG (deg.) 68.6 51.0 40.6 31.7 24.1 17.3 11.5 6.1 1.3 -3.1 -7.0 -10.7 -14.2 -17.5 -20.5 -23.3 MAG 0.793 0.772 0.732 0.701 0.685 0.663 0.649 0.642 0.639 0.637 0.641 0.645 0.651 0.659 0.667 0.674 S22 ANG (deg.) -24.9 -42.1 -54.4 -64.6 -73.2 -80.8 -87.5 -93.1 -98.3 -103.0 -107.4 -111.3 -115.1 -118.7 -122.0 -125.3 f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 MAG 0.959 0.921 0.900 0.880 0.875 0.857 0.844 0.836 0.827 0.824 0.821 0.818 0.813 0.816 0.817 0.820 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 0.826 0.830 0.834 0.841 0.847 0.852 0.856 0.865 0.862 0.860 0.860 0.862 0.863 0.866 0.871 0.875 0.873 0.876 0.883 0.889 0.897 0.905 0.909 0.905 0.899 0.898 0.902 0.906 -150.9 -153.2 -155.8 -158.3 -160.3 -162.3 -164.4 -165.9 -167.5 -169.6 -171.5 -173.2 -175.2 -176.9 -178.4 -179.8 178.5 176.5 174.5 173.0 171.7 170.4 169.7 168.7 167.3 165.3 163.9 162.2 3.93 3.70 3.50 3.31 3.12 2.96 2.80 2.63 2.49 2.35 2.24 2.12 2.02 1.93 1.84 1.76 1.68 1.61 1.56 1.50 1.44 1.38 1.33 1.27 1.21 1.17 1.12 1.09 55.7 52.4 49.4 46.4 44.0 41.3 38.8 36.5 33.8 30.9 28.5 26.1 23.6 21.6 19.3 17.2 14.8 12.7 10.4 8.5 6.7 5.1 3.6 2.1 0.1 -1.8 -3.8 -6.0 0.037 0.036 0.035 0.034 0.033 0.031 0.030 0.029 0.028 0.026 0.025 0.024 0.023 0.022 0.020 0.019 0.018 0.017 0.016 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.008 -25.8 -28.5 -30.8 -33.1 -35.4 -37.3 -39.1 -41.0 -42.5 -43.9 -45.5 -46.8 -48.1 -49.2 -49.9 -50.8 -51.4 -51.4 -51.6 -51.7 -50.9 -50.1 -49.2 -47.0 -45.2 -42.2 -37.3 -33.6 0.684 0.693 0.703 0.713 0.722 0.730 0.739 0.747 0.756 0.762 0.771 0.777 0.781 0.788 0.793 0.796 0.802 0.810 0.815 0.816 0.823 0.832 0.833 0.837 0.843 0.850 0.851 0.854 -128.3 -131.4 -134.3 -137.1 -139.6 -142.2 -144.7 -147.0 -149.3 -151.6 -153.8 -155.8 -158.1 -160.3 -162.4 -164.3 -166.5 -168.5 -170.3 -172.5 -174.6 -176.4 -178.0 179.9 177.9 176.5 174.7 172.8 2300 2350 2400 2450 2500 0.908 0.908 0.907 0.898 0.898 160.9 159.5 158.5 157.1 154.9 1.05 1.02 0.98 0.95 0.92 -7.9 -9.8 -11.5 -13.3 -15.0 0.007 0.007 0.007 0.007 0.007 -28.1 -22.0 -16.1 -9.5 -2.6 0.860 0.863 0.863 0.866 0.872 171.0 169.5 167.8 166.0 164.4 R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 MAG 15.64 13.98 12.68 11.49 10.21 9.32 8.53 7.76 7.12 6.56 6.06 5.63 5.20 4.83 4.50 4.19 S21 ANG (deg.) 150.5 137.6 128.1 119.6 112.2 105.9 99.4 93.6 88.2 83.3 78.7 74.4 70.4 66.5 62.6 59.2 Page 11 of 14 RQA0004LXAQS Preliminary S Parameter (VDS = 6 V, IDQ = 50 mA, Zo = 50 ) S11 ANG (deg.) -41.0 -58.4 -73.5 -86.2 -97.3 -106.3 -114.5 -121.2 -126.8 -131.6 -135.9 -139.6 -143.4 -146.7 -149.7 -152.4 MAG 0.019 0.027 0.031 0.035 0.036 0.037 0.038 0.038 0.038 0.038 0.037 0.037 0.036 0.035 0.035 0.034 S12 ANG (deg.) 63.9 48.6 38.3 30.0 22.9 16.3 11.5 6.3 2.0 -2.0 -5.4 -8.7 -11.8 -14.7 -17.6 -19.9 MAG 0.702 0.688 0.646 0.613 0.602 0.582 0.571 0.567 0.567 0.569 0.573 0.578 0.586 0.596 0.604 0.612 S22 ANG (deg.) -28.7 -48.7 -62.4 -73.4 -82.6 -90.1 -96.7 -102.2 -107.1 -111.4 -115.4 -119.0 -122.3 -125.5 -128.4 -131.3 f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 MAG 0.960 0.916 0.892 0.868 0.860 0.840 0.825 0.816 0.810 0.806 0.802 0.797 0.795 0.797 0.798 0.806 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 0.807 0.811 0.817 0.822 0.831 0.834 0.842 0.846 0.848 0.842 0.843 0.844 0.849 0.849 0.857 0.860 0.860 0.861 0.870 0.878 0.884 0.889 0.895 0.890 0.886 0.887 0.891 0.895 -155.0 -157.3 -159.5 -161.6 -163.6 -165.7 -167.2 -168.7 -170.2 -171.9 -173.9 -175.6 -177.3 -178.8 179.6 178.2 176.8 174.8 172.9 171.4 170.1 169.0 168.3 167.5 165.9 164.1 162.6 161.2 4.89 4.59 4.35 4.11 3.90 3.69 3.50 3.30 3.13 2.97 2.82 2.69 2.56 2.45 2.33 2.24 2.15 2.06 1.99 1.92 1.84 1.77 1.71 1.63 1.57 1.51 1.46 1.40 57.4 54.3 51.4 48.7 46.3 43.7 41.3 39.0 36.4 33.7 31.4 29.0 26.7 24.5 22.4 20.1 17.9 15.9 13.6 11.5 9.8 8.3 6.7 5.3 3.3 1.3 -0.7 -2.7 0.033 0.032 0.031 0.030 0.029 0.028 0.027 0.026 0.025 0.024 0.023 0.022 0.021 0.020 0.018 0.017 0.017 0.016 0.015 0.014 0.013 0.012 0.011 0.011 0.010 0.009 0.009 0.009 -21.9 -24.5 -26.4 -28.4 -30.5 -32.1 -33.4 -35.1 -36.5 -37.5 -38.5 -40.1 -40.5 -41.3 -41.5 -42.1 -42.2 -42.1 -41.9 -40.8 -39.7 -38.1 -36.3 -33.9 -31.3 -27.8 -23.0 -19.0 0.623 0.632 0.645 0.655 0.666 0.674 0.685 0.695 0.703 0.711 0.721 0.727 0.733 0.740 0.748 0.752 0.758 0.767 0.774 0.776 0.784 0.793 0.796 0.799 0.808 0.816 0.818 0.822 -134.0 -136.6 -139.2 -141.7 -144.0 -146.3 -148.5 -150.5 -152.6 -154.7 -156.7 -158.5 -160.7 -162.7 -164.6 -166.3 -168.4 -170.3 -172.1 -174.0 -176.1 -177.7 -179.3 178.7 176.8 175.3 173.6 171.8 2300 2350 2400 2450 2500 0.897 0.898 0.896 0.890 0.890 159.7 158.5 157.4 155.8 154.0 1.36 1.31 1.27 1.23 1.19 -4.8 -6.6 -8.5 -10.4 -12.1 0.008 0.008 0.008 0.008 0.008 -14.5 -9.8 -5.1 -0.3 5.2 0.828 0.833 0.835 0.836 0.843 170.1 168.6 167.0 165.2 163.6 R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 MAG 19.06 16.77 15.28 14.02 12.48 11.51 10.57 9.62 8.80 8.12 7.49 6.94 6.44 5.97 5.57 5.20 S21 ANG (deg.) 150.1 137.1 127.1 118.4 110.8 104.4 98.0 92.7 87.6 83.0 78.8 74.9 71.2 67.5 64.0 60.7 Page 12 of 14 RQA0004LXAQS Preliminary S Parameter (VDS = 6 V, IDQ = 100 mA, Zo = 50 ) S11 ANG (deg.) -45.9 -64.3 -80.4 -93.9 -104.9 -113.3 -120.8 -126.9 -132.3 -136.7 -140.6 -144.0 -147.5 -150.6 -153.5 -156.1 MAG 0.019 0.024 0.028 0.031 0.032 0.033 0.033 0.033 0.033 0.033 0.033 0.032 0.032 0.031 0.031 0.030 S12 ANG (deg.) 65.4 48.3 37.6 29.8 23.1 16.8 11.9 7.4 3.3 -0.3 -3.5 -6.6 -9.3 -11.7 -14.3 -16.5 MAG 0.615 0.597 0.560 0.534 0.517 0.517 0.511 0.512 0.513 0.518 0.524 0.531 0.540 0.550 0.558 0.567 S22 ANG (deg.) -34.3 -55.7 -70.8 -82.5 -91.7 -99.6 -106.1 -111.3 -115.9 -120.0 -123.5 -126.7 -129.7 -132.5 -135.0 -137.5 f (MHz) 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 MAG 0.972 0.920 0.888 0.860 0.847 0.827 0.816 0.809 0.799 0.800 0.801 0.792 0.788 0.790 0.793 0.798 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 0.801 0.805 0.809 0.814 0.823 0.829 0.835 0.837 0.836 0.834 0.835 0.837 0.839 0.844 0.849 0.850 0.850 0.854 0.861 0.868 0.875 0.881 0.886 0.882 0.878 0.877 0.883 0.891 -158.5 -160.5 -162.7 -164.5 -166.3 -168.2 -169.7 -171.0 -172.5 -174.2 -176.1 -177.8 -179.4 179.0 177.7 176.5 174.9 173.0 171.4 170.0 168.7 167.5 166.8 166.0 164.6 163.1 161.5 159.9 5.62 5.31 5.03 4.77 4.51 4.29 4.08 3.85 3.65 3.47 3.31 3.15 3.00 2.88 2.75 2.64 2.53 2.44 2.36 2.27 2.19 2.11 2.03 1.95 1.87 1.80 1.74 1.68 59.1 56.1 53.5 51.1 48.5 45.9 43.7 41.5 39.0 36.4 33.9 31.6 29.4 27.2 25.1 23.1 20.8 18.5 16.4 14.4 12.6 11.0 9.6 8.0 6.2 4.2 2.2 0.1 0.029 0.028 0.027 0.027 0.026 0.025 0.024 0.023 0.022 0.021 0.021 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.012 0.011 0.011 0.010 0.010 0.010 0.009 -18.3 -20.2 -21.9 -23.6 -25.4 -26.6 -27.9 -28.9 -30.3 -30.8 -31.5 -32.5 -33.0 -33.2 -32.9 -32.8 -32.6 -31.9 -31.0 -29.7 -28.0 -26.0 -24.3 -21.0 -18.4 -15.2 -10.2 -6.5 0.578 0.588 0.601 0.612 0.622 0.632 0.643 0.653 0.662 0.670 0.681 0.688 0.694 0.702 0.711 0.715 0.722 0.731 0.738 0.741 0.749 0.759 0.763 0.768 0.776 0.785 0.787 0.792 -139.8 -142.2 -144.5 -146.5 -148.5 -150.6 -152.6 -154.3 -156.1 -158.1 -159.9 -161.4 -163.4 -165.3 -167.0 -168.7 -170.6 -172.5 -174.1 -175.9 -177.9 -179.4 179.0 177.1 175.3 174.0 172.3 170.6 2300 2350 2400 2450 2500 0.892 0.896 0.892 0.885 0.884 158.6 157.7 156.4 155.1 153.0 1.63 1.58 1.53 1.47 1.43 -1.9 -3.8 -5.7 -7.5 -9.4 0.010 0.009 0.009 0.010 0.010 -2.2 1.0 4.1 7.7 11.4 0.799 0.804 0.806 0.810 0.816 168.9 167.5 166.0 164.3 162.7 R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 MAG 22.91 19.70 17.99 16.78 14.91 13.65 12.39 11.24 10.23 9.38 8.68 8.00 7.41 6.89 6.42 5.99 S21 ANG (deg.) 149.6 136.4 125.8 116.9 109.3 103.1 97.3 92.4 87.7 83.4 79.5 75.9 72.3 68.9 65.6 62.3 Page 13 of 14 RQA0004LXAQS Preliminary Package Dimensions 1.5 1.5 3.0 MASS[Typ.] 0.050g 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Part Name Quantity Shipping Container 178 mm reel, 12 mm emboss taping RQA0004LXTL-E 1000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. R07DS0496EJ0200 Rev.2.00 Jun 30, 2011 Page 14 of 14 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2011 Renesas Electronics Corporation. All rights reserved. Colophon 1.1