GENERAL PURPOSE TRANSISTORS RoHS BC808 (25, 40) PNP SOT-23 FEATURES COLLECTOR 3 • S Prefix for automotive and other applications requiring unique site and control change • AEC-Q101 Qualified and PPAP Capable Collector 1 BASE Base PNP 2 EMITTER MAXIMUM RATINGS (TA=25°C unless otherwise noted) Emitter 0.120(3.05) 0.104(2.65) 0.020(0.51) 0.015(0.37) Symbol Value Unit Collector - Base Voltage VCBO -30 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V IC -500 mAdc Collector Current - Continuous FR-5 Board (Note 1) TA = 25° C Derate Above 25° C Total Device Alumina Substrate (Note 2) Dissipation TA = 25° C Derate Above 25° C Thermal Resistance, Junction-to-Ambient 225 1.8 PD 300 2.4 FR-5 Board ROJA .041(1.05) .041(1.05) .047(0.89) .047(0.89) 0.120(3.05) 0.104(2.65) mW mW / ° C 0.043(1.10) 0.035(0.89) 0.006(0.15) 0.001(0.013) 0.024(0.61) 0.018(0.45) °C / W 417 TJ Storage Temperature Range 2 556 Alumina Substrate Junction Temperature Range 1 .007 (0.178) .003 (0.076) Parameter .055 (1.40) .047 (1.19) 3 TSTG -55 to +150 -55 to +150 SOT-23 °C Dimensions in inches and (millimeters) °C Note 1: FR-5 = 1.0 x 0.75 x 0.062” Note 2: Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina ON OFF ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Collector Cut - Off Current ICBO Emitter - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage BC808-25 DC Current Gain BC808-40 -Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Current - Gain - Bandwidth Product Output Capacitance Test Conditions VCB = -20V VCB = -20V, TJ = 150°C Min TYP Max Unit -100 nA ---5.0 µA V(BR)EBO IE = -1.0 µA -5.0 -- -- V V(BR)CES VEB = 0, IC = 10 µa -30 -- -- V -25 -- -- V V(BR)CEO IC = -10 mA IC = -500 mA, VCE = -1.0 V 160 250 40 VCE (sat) IC = -500 mA, IB = -50 mA -- -- -0.7 V VBE (on) IC = -500 mA, IB = -1.0 V -- -- -1.2 V 100 -- -- MHz -- 10 -0.7 pF hFE fT Cobo IC = -100 mA, VCE = -1.0 V IC = -10 mA VCE = -5.0 Vdc f = 100MHz VCB = -10 V f = 1.0 MHz -- 400 600 -- -- Page 1 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2013.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC808 (25, 40) PNP SOT-23 BC808-25 TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. “ON” Voltages -1.0 VCE = -1.0 V TA = 25°C TA = 25°C VBE(sat) @ IC / IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 1000 100 VBE(on)@ VCE = -1.0 V -0.6 -0.4 -0.2 VCE(sat) @ IC / IB = 10 10 -0.1 -1.0 -10 -100 0 -1.0 -1000 -10 -100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Temperature Coefficients -1.0 θV, TEMPERATURE COEFFICIENTS (mV / °C) TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 +1.0 VC for VCE(sat) 0 -1.0 -2.0 VB for VBE -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 5. Capacitances 100 C, CAPACITANCE (pF) VCE, COLLECTOR-EMITTER VOLTAGE VOLTAGE (V) Figure 3. Saturation Region -1000 Cib 10 Cob 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -100 Page 2 of 2 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2013.01.22