GENERAL PURPOSE TRANSISTORS RoHS BC817 (16, 25, 40) NPN SOT-23 FEATURES 3 COLLECTOR 3 • S Prefix for automotive and other applications requiring unique site and control change • AEC-Q101 Qualified and PPAP Capable 1 1 BASE 2 NPN 2 EMITTER MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO 50 V Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO 5.0 V IC 500 mAdc 225 1.8 mW mW / ° C 300 2.4 mW mW / ° C RJ0A 556 417 °C / W TJ TSTG -55 ~ 150 ° C 0.120(3.05) 0.104(2.65) 0.020(0.51) 0.015(0.37) Junction & Storage Temperature Range 1 .041(1.05) .041(1.05) .047(0.89) .047(0.89) 0.120(3.05) 0.104(2.65) PD 0.043(1.10) 0.035(0.89) 0.006(0.15) 0.001(0.013) Collector Cut - Off Current Emitter - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage DC Current Gain Symbol I CBO Dimensions in inches and (millimeters) Test Conditions VCB = 20V VCB = 20V, TA = 150° C Min Typ. Max Unit 100 nA --5.0 µA V(BR)EBO IE = 1.0µA 5.0 -- -- V V(BR)CEO IC = 10mA 45 -- -- V V(BR)CES VEB = 0, IC = 10µA 50 -- -- V -- 250 -- 400 100 BC817-16 BC817-25 hFE VCE = 1.0V, IC = 100mA 160 BC817-40 -- 250 -- 600 VCE = 1.0V, IC = 500mA 40 -- -- Collector - Emitter Saturation Voltage VCE (sat) IC = 500mA, IB = 50mA -- -- 0.7 V Base - Emitter On Voltage VBE (on) IC = 500mA, VCE = 1.0mA -- -- 1.2 V 100 -- -- MHz -- 10 -- pF Transistion Frequency Output Capacitance fT Cobo 0.024(0.61) 0.018(0.45) SOT-23 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter 2 .007 (0.178) .003 (0.076) Collector Current - Continuous Total Device Dissipation FR-5 Board (Note 1) TA = 25° C Derate above 25° C Total Device Dissipation Alumina Substrate (Note 2) TA = 25° C Derate above 25° C Thermal Resistance FR-5 Board Junction to Ambient Alumina Substrate .055 (1.40) .047 (1.19) 3 VCE = 5.0V, IC = 10mA f = 100MHz VCB = 10V, f = 1.0MHz Page 1 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC817 (16, 25, 40) NPN SOT-23 BC817 (16,25,40) SAFE OPERATING AREA Figure 1. Safe Operating Area 1 1 ms 10 ms 100 ms 1s Thermal Limit IC (A) 0.1 0.01 Single Pulse Test @ °C A =T25 0.001 0.01 0.1 1 VCE (Vdc) 10 100 BC817-16 TYPICAL CHARACTERISTIC CURVES Figure 2. Collector Emitter Saturation Voltage vs. Collector Current Figure 1. DC Current Gain vs. Collector Current 300 1 hFE, DC CURRENT GAIN 200 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C 25°C −55°C 100 IC/IB = 10 150°C 25°C −55°C 0.1 0.01 0 0.001 0.01 0.1 0.001 1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 1 0.0001 Figure 5. Saturation Region 0.01 0.1 1 Figure 6. Temperature Coefficients +1 TJ = 25°C 0.8 0.6 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0.1 1 10 IB, BASE CURRENT (mA) 100 0V, TEMPERATURE COEFFICIENTS (mV / °C) VCE, COLLECTOR-EMITTER VOLTAGE 0.001 IC, COLLECTOR CURRENT (A) 1.0 0 0.01 1 1.2 IC, COLLECTOR CURRENT (A) 0.4 0.1 Figure 4. Base Emitter Voltage vs. Collector Current 1.1 1.0 0.01 IC, COLLECTOR CURRENT (A) VC for VCE(sat) 0 -1 VB for -2 1 VBE 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 7. Capacitances C, CAPACITANCE (pF) 100 C ib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Page 2 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC817 (16, 25, 40) NPN SOT-23 BC817-25 TYPICAL CHARACTERISTIC CURVES Figure 9. Collector Emitter Saturation Voltage vs. Collector Current Figure 8. DC Current Gain vs. Collector Current 500 1 hFE, DC CURRENT GAIN 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 400 300 25°C 200 −55°C 100 0 IC/IB = 10 150°C 25°C 0.1 −55°C 0.01 0.001 0.01 1 0.1 0.001 IC, COLLECTOR CURRENT (A) I Figure 10. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) −55°C IC/IB = 10 25°C 0.9 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 1 0.0001 0.01 0.1 1 Figure 13. Temperature Coefficients +1 TJ = 25°C 0.8 0.6 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0.1 1 10 IB, BASE CURRENT (mA) 100 0V, TEMPERATURE COEFFICIENTS (mV / °C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Saturation Region VC for VCE(sat) 0 -1 VB for -2 1 VBE 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 15. Capacitances Figure 14. Current Gain Bandwidth Product vs. Collector Current 1000 100 VCE = 1 V TA = 25°C C, CAPACITANCE (pF) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 0.001 IC, COLLECTOR CURRENT (A) 1.0 0 0.01 1 1.2 IC, COLLECTOR CURRENT (A) 0.4 0.1 COLLECTOR CURRENT (A) Figure 11. Base Emitter Voltage vs. Collector Current 1.1 1.0 0.01 C, 100 10 0.1 1 10 100 1000 Cib 10 Cob 1 0.1 IC, COLLECTOR CURRENT (mA) 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Page 3 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC817 (16, 25, 40) NPN SOT-23 BC817-40 TYPICAL CHARACTERISTIC CURVES Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs. Collector Current 1 700 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 VCE = 1 V 500 25°C 400 300 −55°C 200 100 IC/IB = 10 150°C 25°C 0.1 −55°C 0.01 0.001 0 0.001 0.01 0.001 1 0.1 0.01 IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current −55°C IC/IB = 10 1.0 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 1 0.0001 IC, COLLECTOR CURRENT (A) TJ = 25°C 0.8 0.6 300 mA 500 mA 0.2 0 0.01 1000 0.1 1 10 IB, BASE CURRENT (mA) 100 Figure 22. Current Gain Bandwidth Product vs. Collector Current 10 10 100 VC for V CE(sat) 0 -1 VB for V BE -2 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 23. Capacitances 100 1 1 100 VCE = 1 V TA = 25°C 0.1 0.1 +1 1 C, CAPACITANCE (pF) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 100 mA 0.01 Figure 21. Temperature Coefficients 0V, TEMPERATURE COEFFICIENTS (mV / °C) VCE, COLLECTOR-EMMITTER VOLTAGE (VOLTS) Figure 20. Saturation Region IC = 10 mA 0.001 IC, COLLECTOR CURRENT (A) 1.0 0.4 1 Figure 19. Base Emitter voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 0.1 IC, COLLECTOR CURRENT (A) 1000 IC, COLLECTOR CURRENT (mA) C ib 10 C ob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Page 4 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.22