ROHM BU9832GUL-WE2

High Reliability Serial EEPROMs
WL-CSP EEPROM family
SPI BUS
BU9832GUL-W
No.10001EAT16
●Description
BU9832GUL-W is a serial EEPROM of SPI BUS interface method.
●Features
1) High speed clock action up to 5MHz (Max.)
2) Wait function by HOLD terminal.
3) Part or whole of memory arrays settable as read only memory area by program.
4) 1.8 ~ 5.5V single power source action most suitable for battery use.
5) Page write mode useful for initial value write at factory shipment.
6) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
7) Auto erase and auto end function at data rewrite.
8) Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V)
: 0.1µA (Typ.)
9) Address auto increment function at read action
10) Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WP pin.
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage.
11) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
12) Data kept for 40 years.
13) Data rewrite up to 1,000,000times.
●Page write
Product number
BU9832GUL-W
Number of pages
32 Byte
●BU9832GUL-W
Type
BU9832GUL-W
Capacity
Bit format
Power source
voltage
Package
8Kbit
1K×8
1.8~5.5V
VCSP50L2
●Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Impressed voltage
Vcc
-0.3~+6.5
V
Permissible dissipation
Pd
220(VCSP50L2) *1
mW
Storage Temperature range
Tstg
-65~+125
℃
Operating Temperature range
Topr
-40~+85
℃
―
-0.3~Vcc+0.3
V
Terminal voltage
*1 When using at Ta=25℃ or higher, 220mW to be reduced per 1℃
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© 2010 ROHM Co., Ltd. All rights reserved.
1/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
● Recommended action conditions
Parameter
Symbol
Ratings
Power source voltage
Vcc
1.8~5.5
Input voltage
Vin
0~Vcc
Unit
V
● Memory cell characteristics (Ta=25℃, Vcc=1.8~5.5V)
Limits
Parameter
Min.
Typ.
Max
Unit
Number of data rewrite times
*1
1,000,000
–
–
Times
Data hold years
*1
40
–
–
Years
*1 : Not 100% TESTED
● Input / output capacity (Ta=25℃, frequency=5MHz)
Limits
Parameter
Symbol
Min.
Max
Unit
Conditions
Input capacity
*1
CIN
–
8
pF
VIN=GND
Output capacity
*1
COUT
–
8
pF
VOUT=GND
*1 : Not 100% TESTED
●Electrical characteristics (Unless otherwise specified, Ta=-40~+85℃, Vcc=1.8~5.5V)
Limits
Symbol
Unit
Parameter
Min.
Typ.
Max.
Conditions
“H” input voltage 1
VIH1
0.7xVcc
–
Vcc+0.3
V
1.8≦Vcc≦5.5V
“L” input voltage 1
VIL1
-0.3
–
0.3xVcc
V
1.8≦Vcc≦5.5V
“L” output voltage 1
VOL1
0
–
0.4
V
IOL=2.1mA(Vcc=2.5V~5.5V)
“L” output voltage 2
VOL2
0
–
0.2
V
IOL=150µA(Vcc=1.8V~2.5V)
“H” output voltage 1
VOH1
Vcc-0.5
–
Vcc
V
IOH=-0.4mA(Vcc=2.5V~5.5V)
“H” output voltage 2
VOH2
Vcc-0.2
–
Vcc
V
IOH=-100µA(Vcc=1.8V~2.5V)
Input leak current
ILI
-1
–
1
µA
VIN=0~Vcc
Output leak current
ILO
-1
–
1
µA
VOUT=0~Vcc, CS =Vcc
ICC1
–
–
1.0
mA
ICC2
–
–
2.0
mA
ICC3
–
–
3.0
mA
ICC4
–
–
1.5
mA
ICC5
–
–
2.0
mA
ISB
–
–
2
µA
Current consumption
at write action
Current consumption
at read action
Standby current
Vcc=1.8V,fSCK=2MHz, tE/W=5ms
Byte write, Page write, Write status
register
Vcc=2.5V,fSCK=5MHz, tE/W=5ms
Byte write, Page write, Write status
register
Vcc=5.5V,fSCK=5MHz, tE/W=5ms
Byte write, Page write, Write status
register
Vcc=2.5V,fSCK=5MHz
Read, Read status register
Vcc=5.5V,fSCK=5MHzN
Read, Read status register
Vcc=5.5V
SCK=SI=Vcc or=GND,SO=OPEN
○This product is not designed for protection against radioactive rays.
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© 2010 ROHM Co., Ltd. All rights reserved.
2/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Operating timing characteristics
(Ta=-40~+85℃, unless otherwise specified, load capacity CL1=100pF)
1.8≤Vcc≺2.5V
Parameter
Symbol
Min.
Typ.
Max.
2.5≤Vcc≺5.5V
Min.
Typ.
Max.
Unit
SCK frequency
fSCK
–
–
2
–
–
5
MHz
SCK high time
tSCKWH
200
–
–
85
–
–
ns
SCK low time
tSCKWL
200
–
–
85
–
–
ns
CS high time
tCS
200
–
–
85
–
–
ns
CS setup time
tCSS
200
–
–
90
–
–
ns
CS hold time
tCSH
200
–
–
85
–
–
ns
SCK setup time
tSCKS
200
–
–
90
–
–
ns
SCK hold time
tSCKH
200
–
–
90
–
–
ns
SI setup time
tDIS
40
–
–
20
–
–
ns
SI hold time
tDIH
50
–
–
40
–
–
ns
Data output delay time1
tPD1
–
–
150
–
–
70
ns
Data output delay time2 (CL2=30pF)
tPD2
–
–
145
–
–
55
ns
Output hold time
tOH
0
–
–
0
–
–
ns
Output disable time
tOZ
–
–
250
–
–
100
ns
HOLD setting setup time
tHFS
120
–
–
60
–
–
ns
HOLD setting hold time
tHFH
90
–
–
40
–
–
ns
HOLD release setup time
tHRS
120
–
–
60
–
–
ns
HOLD release hold time
tHRH
140
–
–
70
–
–
ns
Time from HOLD to output High-Z
tHOZ
–
–
250
–
–
100
ns
Time from HOLD To output change
tHPD
–
–
150
–
–
70
ns
SCK rise time
*1
tRC
–
–
1
–
–
1
µs
SCK fall time
*1
tFC
–
–
1
–
–
1
µs
Output rise time
*1
tRO
–
–
100
–
–
50
ns
Output fall time
*1
tFO
–
–
100
–
–
50
ns
tE/W
–
–
5
–
–
5
ms
Write time
*1 NOT 100% TESTED
●AC measurement conditions
Parameter
Symbol
Limits
Min.
Typ.
Max.
Unit
Load capacity 1
CL1
–
–
100
pF
Load capacity 2
CL2
–
–
30
pF
Input rise time
–
–
–
50
ns
Input fall time
–
–
–
50
ns
Input voltage
–
0.2Vcc/0.8Vcc
V
Input / Output judgment voltage
–
0.3Vcc/0.7Vcc
V
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© 2010 ROHM Co., Ltd. All rights reserved.
3/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Sync data input / output timing
tCSS
tCS
"H"
CS
"L"
CS
tSCKS
tSCKWL
tRC
tSCKWH
tFC
tHFS
tHFH
tHRS tHRH
SCK
SCK
tDIS
tDIS tDIH
SI
n
n+1
SI
tHOZ
SO
High-Z
SO
Dn+1
Dn
n-1
tHPD
High-Z
Dn
Dn-1
HOLD
Fig.1 Input timing
Fig.3 HOLD timing
SI is taken into IC inside in sync with data rise edge of SCK.
IInput address and data from the most significant bit MSB.
tCS
tCSH tSCKH
CS
SCK
SI
tPD
tRO,tFO
tOH
tOZ
High-Z
SO
Fig.2 Input / Output timing
SO is output in sync with data fall edge of SCK. Data is
output from the most significant bit MSB.
●Block diagram
CS
VOLTAGE
INSTRUCTION DECODE
DETECTION
CONTROL CLOCK
SCK
GENERATION
SI
WRITE
HIGH VOLTAGE
INHIBITION
GENERATOR
INSTRUCTION
REGISTER
HOLD
STATUS REGISTER
ADDRESS
REGISTER
11bit
ADDRESS
DECODER
11bit
1~64K
EEPROM
DATA
WPB
REGISTER
8bit
READ/WRITE
AMP
8bit
SO
Fig.4 Block diagram
●Pin assignment and description
Land Terminal
No.
name
Input/
Output
A1
WPB
Input
A2
GND
–
A3
SI
Input
Function
Write protect input
Write status register command is prohibited.
All input / output reference voltage, 0V
C
C1
B
B1
A
A1
A2
A3
B1
SO
1
2
3
B3
SCK
Input
Serial clock input
C1
CS
Input
Chip select input
C2
Vcc
–
C3
HOLD
Input
C2
C3
B3
Start bit, ope code, address, and serial data input
INDEX post
Fig.5 Pin assignment diagram
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© 2010 ROHM Co., Ltd. All rights reserved.
Output Serial data output
4/18
Power source to be connected
Hold input
Command communication may be
suspended temporarily (HOLD status)
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Characteristic data (The following characteristic data are Typ. Values.)
6
6
Ta=-40℃
Ta=25℃
Ta=85℃
5
5
Ta=-40℃
Ta=25℃
Ta=85℃
0.8
3
VOL[V]
4
SPEC
VIL[V]
3
0.6
0.4
SPEC
2
2
1
1
0
0
0
1
2
3
Vcc[V]
4
5
0.2
SPEC
0
0
6
Fig.6 "H" input voltege VIH(CS,SCK,SI,HOLD,WP)
1
2
3
Vcc[V]
4
5
0
6
Fig.7 "L" input voltage VIL(CS,SCK,SI,HOLD,WP)
2
Ta=-40℃
Ta=25℃
Ta=85℃
0.4
Ta=-40℃
Ta=25℃
Ta=85℃
1.4
0.4
2
0.2
0.8
1.8
0
1.2
1
2
3
IOL[mA]
IOH[mA]
Fig.9 "H" output voltage VOH-IOH (Vcc=1.8V)
4
5
6
0
SPEC
ICC1,2,3[mA]
ILO[μA]
ILI[μA]
fSK=5MHz
DATA=55h
3
1
0.5
1.2
4
SPEC
Ta=-40℃
Ta=25℃
Ta=85℃
0.8
Fig.11 "H" output voltage VOH-IOH (Vcc=2.5V)
1.5
1
0.4
IOH[mA]
Fig.10 "L" output voltage VOL-IOL (Vcc=2.5V)
1.5
6
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
0
0
5
2.2
SPEC
1.2
4
2.4
0.6
VOL[V]
SPEC
3
2.6
0.8
1.6
2
Fig.8 "L" output voltage VOL-IOL (Vcc=1.8V)
1
1.8
1
IOL[mA]
VOH[V]
VIH[V]
4
VOH[V]
1
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=-40℃
Ta=25℃
Ta=85℃
0.5
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
2
SPEC
1
0
0
1
2
3
Vcc[V]
4
5
0
0
6
0
1
Fig.12 Input leak current ILI(CS,SCK,SI,HOLD,WP)
4
5
0
6
2
3
Vcc[V]
fSCK[MHz]
ISB[μA]
Ta=-40℃
Ta=25℃
Ta=85℃
1.5
1
10
SPEC
SPEC
Ta=-40℃
Ta=25℃
Ta=85℃
1
0.5
0.5
0
0
2
3
Vcc[V]
4
5
0
6
1
2
3
4
5
0.1
6
0
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
tSCKWL[ns]
200
150
SPEC
100
150
100
1
2
3
4
5
Vcc[V]
Fig.18 tSCK high time tSCKWH
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© 2010 ROHM Co., Ltd. All rights reserved.
6
6
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
100
50
0
0
5
150
SPEC
50
50
4
SPEC
200
tCS[ns]
Ta=-40℃
Ta=25℃
Ta=85℃
3
Vcc[V]
250
250
200
2
Fig.17 SCK frequency fSCK
Fig.16 Consumption current at standby operation ISB
250
SPEC
1
Vcc[V]
Fig.15 Consumption current at READ operation
ICC4,5(READ,WRSR,fSK=5MHz)
0
6
2
Ta=-40℃
Ta=25℃
Ta=85℃
1
5
100
SPEC
1.5
0
4
SPEC
SPEC
1
1
Fig.14 Current consumption at WRITE operation
ICC1,2,3 (WRITE,PAGE WRITE,WRSR,fSCK=5MHz)
2.5
fSK=5MHz
DATA=55h
2
ICC4,5[mA]
3
Vcc[V]
Fig.13 Output leak current ILO(SO)
2.5
tSCKWH[ns]
2
0
1
2
3
4
5
Vcc[V]
Fig.19 tSCK low time tSCKWL
5/18
6
0
0
1
2
3
4
5
6
Vcc[V]
Fig.20 CS high time tCS
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Characteristic data (The following characteristic data are Typ. Values.)
250
150
SPEC
200
100
SPEC
50
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
100
-50
0
1
2
3
Vcc[V]
4
5
0
1
2
3
Vcc[V]
4
5
0
6
1
tPD1[ns]
100
SPEC
20
SPEC
150
tPD2[ns]
SPEC
40
Ta=-40℃
Ta=25℃
Ta=85℃
3
Vcc[V]
4
5
6
200
Ta=-40℃
Ta=25℃
Ta=85℃
150
SPEC
2
Fig.23 SI setup time tDIS
200
SPEC
30
0
Fig.22 CS hold time tCSH
60
50
20
-40
0
6
Ta=-40℃
Ta=25℃
Ta=85℃
-20
Fig.21 CS setup time tCSS
tDIH[ns]
SPEC
150
50
0
SPEC
40
tDIS[ns]
SPEC
tCSH[ns]
200
tCSS[ns]
60
250
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=-40℃
Ta=25℃
Ta=85℃
100
SPEC
50
50
10
0
0
1
2
3
4
5
0
0
6
0
1
2
3
Vcc[V]
Vcc[V]
4
5
0
6
SPEC
100
150
SPEC
60
90
SPEC
40
100
5
6
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
120
80
tHFH[ns]
200
tOZ[ns]
Ta=-40℃
Ta=25℃
Ta=85℃
120
tHRH[ns]
250
4
150
140
Ta=-40℃
Ta=25℃
Ta=85℃
3
Fig.26 Data output delay time tPD2(CL=30pF)
300
SPEC
2
Vcc[V]
Fig.25 Data output delay time tPD1(CL=100pF)
Fig.24 SI hold time tDIH
1
60
SPEC
30
20
50
0
0
-20
0
0
1
2
3
Vcc[V]
4
5
-30
0
6
1
2
3
6
0
Fig.28 HOLD setting hold time tHFH
300
Ta=-40℃
Ta=25℃
Ta=85℃
120
CS
40
5
6
SPEC
60
CS
CS
30
0
50
0
0
-40
1
4
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
90
tRO[ns]
SPEC
3
Vcc[V]
SPEC
80
tHPD[ns]
150
0
2
120
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
200
100
1
Fig.29 HOLD release hold time tHRH
160
SPEC
250
tHOZ[ns]
5
Vcc[V]
Fig.27 Output disable time tOZ
2
3
Vcc[V]
4
5
6
0
Fig.30 Time From HOLD to output High-Z tHOZ
1
2
3
Vcc[V]
4
5
6
Fig.31 Time from HOLD to output change tHPD
0
1
2
3
Vcc[V]
4
5
6
Fig.32 Output rise time tRO
10
120
SPEC
tE/W[ms]
SPEC
60
Ta=-40℃
Ta=25℃
Ta=85℃
8
Ta=-40℃
Ta=25℃
Ta=85℃
90
tFO[ns]
4
30
6
SPEC
4
2
0
0
0
1
2
3
Vcc[V]
4
5
Fig.33 Output fall time tFO
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© 2010 ROHM Co., Ltd. All rights reserved.
6
0
1
2
3
4
5
6
Vcc[V]
Fig.34 Write cycle time tE/W
6/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Features
○Status registers
This IC has status registers. The status registers are of 8 bits and express the following parameters.
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are
valid even when power source is turned off.
Rewrite characteristics and data hold time are same as characteristics of the EEPROM.
WEN can be set by write
enable command and write disable command. WEN becomes write disable status when power
―
source is turned off. R/B is for write confirmation, therefore cannot be set externally.
The value of status register can be read by read status command.
●Status registers
Product number
BU9832GUL-W
bit
Memory
location
WPEN
EEPROM
BP1
BP0
WEN
―
R/B
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
WPEN
0
0
0
BP1
BP0
WEN
R/B
Function
Contents
WP pin enable / disable designation bit
WPEN=0=invalid
WPEN=1=valid
EEPROM EEPROM write disable block designation bit
Register
Register
―
This enables / disables the functions of WP
pin.
This designates the write disable area of
EEPROM. Write designation areas of product
numbers are shown below.
Write and write status register write
enable / disable status confirmation bit
WEN=0=prohibited
WEN=1=permitted
Write cycle status (READY / BUSY) status
confirmation bit
R / B =0=READY
R / B =1=BUSY
●Write disable block setting
BP1
BP0
Write disable block
0
0
None
0
1
300h-3FFh
1
0
200h-3FFh
1
1
000h-3FFh
○ WP pin
By setting WP =LOW, write command is prohibited. As for BU9832GUL-W when WPEN bit is set “1”, the WP pin
functions become valid. And the write command to be disabled at this moment is WRSR.
However, when write cycle is in execution, no interruption can be made.
Product number
BU9832GUL-W
WRSR
WRITE
Prohibition possible but WPEN bit “1”
Prohibition impossible
○ HOLD pin
By HOLD pin, data transfer can be interrupted. When SCK=”1”, by making HOLD from “1” into”0”, data transfer to
EEPROM is interrupted. When SCK = “0”, by making HOLD from “0” into “1”, data transfer is restarted.
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7/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Command mode
Command
WREN
Write enable
WRDI
READ
Contents
Ope code
Write enable command
0000
0110
Write disable
Write disable command
0000
0100
Read
Read command
0000
0011
WRITE
Write
Write command
0000
0010
RDSR
Read status register
Status register read command
0000
0101
WRSR
Write status register
Status register write command
0000
0001
●Timing chart
1. Write enable (WREN) / disable (WRDI) cycle
・WREN (WRITE ENABLE): Write enable
CS
―――
CS
0
SCK
SI
0
1
0
2
0
3
0
4
0
5
1
6
1
7
0
High-Z
SO
Fig.35 Write enable command
・WRDI (WRITE DISABLE): Write disable
―――
CS
CS
0
SCK
SI
0
1
0
2
0
3
0
4
0
5
1
6
0
7
0
High-Z
SO
Fig.36 Write disable
○This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it
is set to write disable status by write disable command. As for these commands, set CS LOW, and then input the
respective ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks,
command becomes valid.
When to carry out write and write status register command, it is necessary to set write enable status by the write enable
command. If write or write status register command is input in the write disable status, commands are cancelled. And
even in the write enable status, once write and write status register command is executed once, it gets in the write
disable status. After power on, this IC is in write disable status.
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8/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
2. Read command (READ)
4
5
6
7
8
23
0
0
0
1
*
1
*
*
A9
A0
~
~
~
~
High-Z
A1
D7 D6
~ ~
~ ~
~
~
0
~
~
0
~
~
SO
0
30
~
~
~
~
SI
24
~
~
3
~
2
~
~
1
~
~
0
~
~
SCK
~
~
CS
D2
D1
D0
*=Don't Care
Fig.37 Read command
By read command, data of EEPROM can be read. As for this command, set CS LOW, then input address after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15 clock, and from D7
to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK,
data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the
most significant address, by continuing increment read, data of the most insignificant address is read.
3. Write command (WRITE)
3
4
5
6
7
8
~ ~
~
~
2
~
~
1
~
~
0
~
~
SCK
~
~
CS
23
24
30
~
~
~
~
0
0
1
0
*
*
*
A9
A1
A0
D7
D6
D2
D1
D0
~
~
High-Z
0
~
~
0
~
~
0
~
~
SO
0
~
~
SI
31
*=Don't Care
Fig.38 Write command
By write command, data of EEPROM can be written. As for this command, set CS LOW, then input address and data
after write ope code. Then, by making CS HIGH, the EEPROM starts writing. The write time of EEPROM requires time of
tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CS after taking the last data (D0),
and before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled.
This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting CS ,
data up to 16 bytes can be written for one tE/W. In page write, the insignificant 4 bit of the designated address is
incremented internally at every time when data of 1 byte is input and data is written to respective addresses. When data of
the maximum bytes or higher is input, address rolls over, and previously input data is overwritten.
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9/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
4. Status register write / read command
CS
0
SCK
SI
SO
0
1
3
2
0
0
0
4
5
0
6
0
0
7
1
8
9
bit 7
bit 6
WP E N
*
10
bit 5
*
11
12
bi t4
bit 3
*
BP1
13
14
bit 2
BP0
15
bit 1
bit 0
*
*
High-Z
*=Don't care
Fig.39 Status register write command
*1
Write status register command can write status register data. The data can be written by this command are 2 bits , that is,
BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can be set. As
for this command, set CS LOW, and input ope code of write status register, and input data. Then, by making CS HIGH,
EEPROM starts writing. Write time requires time of tE/W as same as write. As for CS rise, start CS after taking the last
data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled. Write disable block is
determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array.
(Refer to the write disable block setting table.) To the write disabled block, write cannot be made, and only read can be
made.
*1
3bits including 1WPEN (bit7)
CS
SCK
SI
SO
1
0
0
0
2
0
High-Z
3
0
4
0
5
1
7
6
0
8
9
10
11
12
13
14
15
1
bit7
bit6
bit5
bit4
WPEN
0
0
0
bit3
bit2
BP1 BP0
bit1
bit0
WEN R/B
Fig.40 Status register read command
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10/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●At standby
○Current at standby
Set CS “H”, and be sure to set SCK, SI, WP , HOLD input “L” or “H”. Do not input intermediate electric potantial.
○Timing
As shown in Fig.41, at standby, when SCK is “H”, even if CS is fallen, SI status is not read at fall edge. SI status is read
at SCK rise edge after fall of CS . At standby and at power ON/OFF, set CS “H” status.
―――
Even if CS is fallen at SCK=SI=”H”,
SI status is not read at that edge.
―――
CS
Command start here. SI is read.
SCK
0
1
2
SI
Fig.41 Operating timing
● WP cancel valid area
WP is normally fixed to “H” or “L” for use, but when WP is controlled so as to cancel write status register command and
write command, pay attention to the following WP valid timing.
While write or write status register command is executed, by setting WP = “L” in cancel valid area, command can be
cancelled. The area from command ope code before CS rise at internal automatic write start becomes the cancel valid
area. However, once write is started, any input cannot be cancelled. WP input becomes Don’t Care, and cancellation
becomes invalid.
SCK
15
16
CS
Ope Code
tE/W
Data write time
Data
W P cancel invalid area
W P cancel invalid area
Fig.42
O pe Code
WP valid timing (WRSR)
D a ta
A d d res s
WP cancel invalid area
Fig.43
tE /W
D a ta wr it e tim e
WP cancel invalid area
WP valid timing (WRITE)
● HOLD pin
By HOLD pin, command communication can be stopped temporarily (HOLD status). The HOLD pin carries out command
communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the
HOLD pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release
the HOLD status, set the HOLD pin HIGH when SCK=LOW. After that, communication can be restarted from the point
before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD
status, by starting A4 address input, read can be restarted. When in HOLD status, leave CS LOW. When it is set
CS =HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.
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11/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Method to cancel each command
○READ
・Method to cancel : cancel by CS = “H”
Ope code
Address
Data
8 bits
8 bits
8 bits
Cancel available in all areas of read mode
Fig.44 READ cancel valid timing
○RDSR
・Method to cancel : cancel by CS = “H”
Data
Ope code
8 bits
8 bits
Cancel available in all
areas of rdsr mode
Fig.45 RDSR cancel valid timing
○WRITE, PAGE WRITE
a: Ope code, address input area.
Cancellation is available by CS =”H”
b: Data input area (D7~D1 input area)
Cancellation is available by CS =”H”
c: Data input area (D0 area)
When CS is started, write starts.
After CS rise, cancellation cannot be made by any means.
d: tE/W area.
Cancellation is available by CS = “H”. However, when write
starts ( CS is started) in the area c, cancellation cannot be
made by any means. And by inputting on SCK clock,
cancellation cannot be made. In page write mode, there is
write enable area at every 8 clocks.
Note 1)
Note 2)
Ope code
8bits
Data(n)
8bits
8bits
a
tE/W
b
d
c
Fig.46 WRITE cancel valid timing
SCK
SI
D7
D6
D5
D4
D3
D2
D1
D0
c
b
If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again.
If CS is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,therefore,
it is necessary to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.
○WRSR
a: From ope code to 15 rise.
Cancel by CS =”H”.
b: From 15 clock rise to 16 clock rise (write enable area).
When CS is started, write starts.
After CS rise, cancellation cannot be made by any means.
c: After 16 clock rise.
Cancel by CS =”H”. However, when write starts ( CS is started)
in the area b, cancellation cannot be made by any means.
And, by inputting on SCK clock, cancellation cannot be made.
Note 1)
Note 2)
Address
14
SCK
D1
SI
16
b
c
tE/W
Address
8 bits
17
D0
a
Ope code
15
8 bits
a
c
b
Fig.47 WRSR cancel valid timing
If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again
If CS is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is
necessary to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.
○WREN/WRDI
a: From ope code to clock rise, cancel by CS = “H”.
b: Cancellation is not available when CS is started after 7 clock.
7
SCK
a
8
9
b
Ope code
8 bits
a
b
Fig.48 WREN/WRDI cancel valid timing
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12/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●High speed operation
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller VOL,
IOL from VIL characteristics of this IC.
○Pull up resistance
VCC-VOLM
RPU≥
Microcontroller
IOLM
VOLM≤
EEPROM
RPU
VOLM
VILE
“L” output
IOLM
VILE
・・・①
・・・②
Example) When Vcc=5V, VILM=1.5V, VOLM=0.4V, IOLM=2mA,
from the equation ①,
“L” input
5-0.4
RPU≥
Fig.49 Pull up resistance
-3
2×10
∴RPU≥
2.3[kΩ]
With the value of RPU to satisfy the above equation, VOLM becomes
0.4V or higher, and with VILE (=1.5V), the equation ② is also satisfied.
・VILM :EEPROM VIH specifications
・VOLM :Microcontroller VOL specifications
・IOLM :Microcontroller IOL specifications
And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CS pull up.
○Pull down resistance
VOHM
VOHM
RPD≥
EEPROM
IOHM
・・・③
VIHE
・・・④
VIHE
VOHM≥
IOHM
Example) When VCC=5V, VOHM=VCC-0.5V, IOHM=0.4mA,
VIHM=VCC×0.7V, from the equation③,
Fig.50 Pull down resistance
5-0.5
RPD≥
0.4×10-3
∴RPU≥
11.3[kΩ]
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude
of VCC / GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC
ж1
/ 0.2Vcc is input, operation speed becomes slow.
In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.
(ж1 At this moment, operating timing guaranteed value is guaranteed.)
tPD_VIL characteristics
80
Spec
70
60
tPD[ns]
50
40
30
Vcc=2.5V
20
Ta=25℃
VIH=Vcc
CL =100pF
10
0
0
0.2
0.4
0.6
0.8
1
VIL[V]
Fig.51 VIL dependency of data output delay time
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13/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
○SO load capacity condition
Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from HOLD
to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, “Do
not connect many devices to SO bus”, “Make the wire between the controller and EEPROM short”, and so forth.
tPD-CL characteristics
80
Vcc=2.5V Ta=25℃
Spec
VIH/VIL=0.8Vcc/0.2Vcc
70
EEPROM
tPD[ns]
60
Spec
SO
50
CL
40
30
20
0
20
40
60
80
100
120
CL[pF]
Fig.52 SO load dependency of data output delay time
○Other cautions
Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold
violation to EEPROM, owing to difference of wire length of each input.
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14/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Equivalent circuit
○Output circuit
SO
OEint.
Fig.53 SO output equivalent circuit
○Input circuit
RESETint.
―――
CS
Fig.54 CS input equivalent circuit
SCK
SI
Fig.55 SCK input equivalent circuit
Fig.56 SI input equivalent circuit
―――
――――――
HOLD
WP
Fig.58 WP input equivalent circuit
Fig.57 HOLD input equivalent circuit
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15/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Notes on power ON/OFF
○At power ON/OFF, set CS “H” (=Vcc).
When CS is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at power ON, set CS “H”. (When CS is in “H” status, all
inputs are canceled.)
Vcc
Vcc
GND
Vcc
CS
GND
Good example
Bad example
Fig.59 CS timing at power ON/OFF
(Good example)
(Bad example)
CS terminal is pulled up to Vcc.
At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition,
the IC internal circuit may not be reset, which please note.
CS terminal is “L” at power ON/OFF.
In this case, CS always becomes “L” (active status), and EEPROM may have malfunction, mistake
write owing to noises and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
○P.O.R. circuit
This IC has a P.O.R. (Power On Reset) circuit as mistake write countermeasure. After P.O.R. action, it gets in write disable
status. The P.O.R. circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the
recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to
noises and the likes.
tR
Vcc
Recommended conditions of tR, tOFF, Vbot
tOFF
0
Vbot
tR
tOFF
Vbot
10ms or below
10ms or higher
0.3V or below
100ms or below
10ms or higher
0.2V or below
Fig.60 Rise waveform
●Noise countermeasures
○Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a bypass capacitor (0.1µF) between IC Vcc and GND. At that moment, attach it as close to IC as
possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
○SCK noise
When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock
bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysterisis width of this circuit is set about
0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR)
of SCK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the
clock rise, fall time as small as possible.
○ WP noise
During execution of write status register command, if there exist noises on WP pin, mistake in recognition may occur
and forcible cancellation may result, which please note. To avoid this, a Schmitt trigger circuit is built in WP input. In the
same manner, a Schmitt trigger circuit is built in SI input, SI input and HOLD input too.
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16/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Notes for use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is higher than that of
GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
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17/18
2010.10 - Rev.A
Technical Note
BU9832GUL-W
●Ordering part number
B
U
Part No.
9
8
3
2
Part No.
G
U
L
Package
GUL : VCSP50L2
- W
W-CELL
E
2
Packaging and forming specification
E2: Embossed tape and reel
VCSP50L2(BU9832GUL-W)
<Tape and Reel information>
0.08 S
8- φ 0.25±0.05
0.05 A B
A
(φ0.15)INDEX POST
B
C
B
A
1
0.545±0.1
2
0.55MAX
S
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
P=0.5×2
2.09±0.1
Tape
0.425±0.1
0.1±0.05
1.85±0.1
1PIN MARK
3
P=0.5×2
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© 2010 ROHM Co., Ltd. All rights reserved.
1pin
(Unit : mm)
Reel
18/18
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2010.10 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
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More detail product informations and catalogs are available, please contact us.
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R1010A