RENESAS RJK03N2DPA

Preliminary Datasheet
RJK03N2DPA
30V, 40A, 4.0mΩmax.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
R07DS0783EJ0200
Rev.2.00
Feb 12, 2013
Features







High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
Ratings
30
±12
Unit
V
V
ID
Note1
ID(pulse)
IDR
IAP Note 2
EAS Note 2
Pch Note3
ch-c Note3
Tch
Tstg
40
160
40
14
19.6
35
3.57
150
–55 to +150
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
R07DS0783EJ0200 Rev.2.00
Feb 12, 2013
Page 1 of 6
RJK03N2DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.3
3.8
105
3350
405
250
2.1
27.2
7.6
7.8
6.0
4.4
63.3
Max
—
± 0.5
1
2.5
4.0
4.8
—
4690
—
—
4.2
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF

nC
nC
nC
ns
ns
ns
—
—
—
18.7
0.41
7.4
—
—
—
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 24 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 20 A, VGS = 8.0 V Note4
ID = 20 A, VGS = 4.5 V Note4
ID = 20 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 40 A
VGS = 8 V, ID = 20 A
VDD  10 V
RL = 0.5 
Rg = 4.7 
IF = 2 A, VGS = 0 Note4
IF =40 A, VGS = 0
diF/ dt = 500 A/ s
Notes: 4. Pulse test
R07DS0783EJ0200 Rev.2.00
Feb 12, 2013
Page 2 of 6
RJK03N2DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
30
20
PW = 10 ms
1
Operation in
this area is
limited by RDS(on)
e
Op
ra
tio
50
100
150
0.1
0.1
200
n
Tc = 25 °C
1 shot Pulse
0
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
50
4.5 V
8V
2.5 V
Pulse Test
40
Drain Current ID (A)
Drain Current ID (A)
10
DC
10
100
s
m
Drain Current ID (A)
1000
1
Channel Dissipation Pch (W)
40
2.4 V
30
2.3 V
20
10
40
VDS = 5 V
Pulse Test
30
20
10
VGS = 2.2 V
25°C
Tc = 75°C
–25°C
Drain to Source Saturation Voltage
VDS(on) (mV)
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
100
200
Pulse Test
Pulse Test
150
30
100
10
ID = 20 A
50
VGS = 4.5 V
3
10 A
8V
5A
0
3
6
9
12
Gate to Source Voltage VGS (V)
R07DS0783EJ0200 Rev.2.00
Feb 12, 2013
1
1
3
10
30
100
300 1000
Drain Current ID (A)
Page 3 of 6
RJK03N2DPA
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
10000
10
Pulse Test
3000
Capacitance C (pF)
8
ID = 5 A, 10 A, 20 A
6
VGS = 4.5 V
4
8V
5 A, 10 A, 20 A
2
1000
0
25
50
75
Crss
100
Case Temperature
10
0
100 125 150
Tc
(°C)
9
VDS
20
6
3
VDD = 25 V
10 V
0
0
20
40
60
80
0
100
Reverse Drain Current IDR (A)
12
VDD = 25 V
10 V
10
20
30
50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
VGS
40
30
10
Reverse Drain Current vs.
Source to Drain Voltage
15
ID = 40 A
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50
Coss
300
30
0
–25
Ciss
Pulse Test
10 V
40
5V
30
20
VGS = 0, –5 V
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Energy EAS (mJ)
25
20
15
10
5
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0783EJ0200 Rev.2.00
Feb 12, 2013
Page 4 of 6
RJK03N2DPA
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
PDM
2
0.0
1
lse
0.0 pu
t
ho
1s
0.03
D=
PW
T
PW
T
0.01
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
EAS =
L
VDS
Monitor
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
10 V
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
8V
10%
10%
VDS
= 10 V
90%
td(on)
R07DS0783EJ0200 Rev.2.00
Feb 12, 2013
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK03N2DPA
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PWSN0008DE-A
Previous Code
WPAK(3F)V
MASS[Typ.]
0.075g
0.85Max
5.1 ± 0.2
Unit: mm
0.5 ± 0.15
Package Name
WPAK(3F)
4.23Typ
1.27Typ
+0.1
-0.2
1.27Typ
0.5 ± 0.15
5.9
+0.1
-0.3
6.1
0.05Max
0Min
Stand-off
0.545Typ
3.6 ± 0.2
3.92 ± 0.22
0.21Typ
0.42 ± 0.08
4.90 ± 0.1
(Sn plating)
Notice:The reverse pattern of die-pad
support lead described above exists.
Ordering Information
Orderable Part Number
RJK03N2DPA-00-J5A
Quantity
3000 pcs
Shipping Container
Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0783EJ0200 Rev.2.00
Feb 12, 2013
Page 6 of 6
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