Data Sheet μPA2826T1S N-channel MOSFET R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 20 V , 27 A , 4.3 mΩ Description The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features • VDSS = 20 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A) • 2.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. μ PA2826T1S-E2-AT∗1 LEAD PLATING Pure Sn(Tin) PACKING Package HWSON-8 0.022 g TYP. Tape 5000 p/reel Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Channel Temperature Storage Temperature Tch Tstg Ratings 20 ±12 ±27 ±81 1.5 3.8 20 Unit V V A A W W W 150 −55 to +150 °C °C Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case(Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 6.25 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Page 1 of 6 μPA2826T1S Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | Drain to Source On-state Resistance ∗1 MIN. TYP. MAX. 1 ±10 1.5 3.4 3.9 5.4 3610 1230 1130 50 94 120 120 37 7 4.3 4.8 9.9 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf QG QGS Gate to Drain Charge Body Diode Forward Voltage ∗1 QGD VF(S-D) 18 0.82 nC V ID = 27 A IF = 27 A, VGS = 0 V Reverse Recovery Time Reverse Recovery Charge trr Qrr 73 70 ns nC IF = 27 A, VGS = 0 V, di/dt = 100 A/μs 0.5 25 Unit μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC Test Conditions VDS = 20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 6.8 A VGS = 8.0 V, ID = 13.5 A VGS = 4.5 V, ID = 13.5 A VGS = 2.5 V, ID = 6.8 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 10 V, ID = 13.5 A, VGS = 4.0 V, RG = 10 Ω VDD = 10 V, VGS = 4.0 V, Note: ∗1. Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% IG = 2 mA RL 50 Ω VDD 90% PG. VDS 90% VGS 0 90% VDS VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 0 10% 10% tr td(off) Wave Form td(on) ton tf toff Page 2 of 6 μPA2826T1S TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1000 120 ID(pulse)=81A 100 100 ID(DC)=27A ID - Drain Current - A dT - Percentage of Rated Power - % 140 80 60 40 10 PW=100us RDS(on) Limited VGS=8V 200us 500us Power Dissipation Limited 1 1ms 10ms DC 0.1 20 Tc=25°C Single Pulse 0 0 25 50 75 100 125 150 0.01 0.01 175 TC - Case Temperature - °C 0.1 1 10 100 VDS - Drain to Source Voltage – V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Single Pulse Rth(ch-A) = 83.3°C/W 100 Rth(ch-C) = 6.25°C/W 10 1 0.1 Rth(ch-A) : Mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt) 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 80 VGS=8V 60 TA=150°C 75°C 25°C -55°C 10 4.5V ID - Drain Current - A ID - Drain Current - A 2.5V 40 20 1 0.1 0.01 VDS = 10V Pulsed Pulsed 0.001 0 0 0.2 0.4 0.6 VDS - Drain to Source Voltage - V R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 0.8 0 0.5 1 1.5 2 VGS - Gate to Source Voltage - V Page 3 of 6 μPA2826T1S GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. DRAIN CHANNEL TEMPERATURE CURRENT | yfs | - Forward Transfer Admittance - S 100 1.0 0.5 VDS = 10V ID=1.0mA 0.0 -50 0 50 100 150 TA=150°C 75°C 25°C -55°C 10 1 0.1 VDS = 10V Pulsed 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 10 8 VGS=2.5V 6 4.5V 4 8.0V 2 Pulsed 0 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) – Gate to Source Cut-off Voltage - V 1.5 15 ID=13.5A Pulsed 10 5 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. 10000 10 VGS=2.5V ID=6.8A 8 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE 4.5V 13.5A 6 4 8.0V 13.5A 2 Pulsed Ciss 1000 Coss Crss VGS = 0V f = 1.0MHz 100 0 -50 0 50 100 Tch - Channel Temperature - °C R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 150 0.1 1 10 100 VDS - Drain to Source Voltage - V Page 4 of 6 μPA2826T1S SWITCHING CHARACTERISTICS 4 VDD = 10V VGS = 4.0V RG = 10Ω VDD=4V ID=15.8A VGS - Gate to Source Voltage - V td(on),tr,td(off),tr – Switching Time - ns 1000 DYNAMIC INPUT CHARACTERISTICS tf td(off) 100 tr td(on) 10 0.1 1 10 100 ID - Drain Current - A 10V 27A 3 16V 27A 2 1 0 0 10 20 30 40 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS=8V IF - Diode Forward Current - A 4.5V 10 2.5V 1 0V 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 VF(S-D) - Source to Drain Voltage - V R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Page 5 of 6 μPA2826T1S Package Drawings (Unit: mm) HWSON-8 5 6 7 4 3 2 8 1 1,2,3 : Source 4 : Gate 5,6,7,8 : Drain RENESAS Package Code : PWSN0008JB-A Equivalent Circuit Drain Body Diode Gate Gate Protection Diode Remark Source Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. 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