RENESAS RJK5002DPD

Preliminary Datasheet
RJK5002DPD
500V - 2.4A - MOS FET
High Speed Power Switching
R07DS0866EJ0100
Rev.1.00
Aug 08, 2012
Features
 Low on-state resistance
RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
D
4
1.
2.
3.
4.
G
12
3
Gate
Drain
Source
Drain
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
2.
4.
Symbol
VDSS
VGSS
ID Note1
ID(pulse) Note2
IDR Note1
IDR(pulse) Note2
IAP Note3
Pch Note4
ch-c
Tch
Tstg
Value
500
30
2.4
4.8
2.4
4.8
2.4
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
C/W
C
C
Limited by Tch max.
Pulse width limited by safe operating area.
STch = 25C, Tch  150C
Value at Tc = 25C
R07DS0866EJ0100 Rev.1.00
Aug 08, 2012
Page 1 of 6
RJK5002DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
500
Typ
—
Max
—
Unit
V
—
—
—
3.83
1
0.1
4.5
5.00
A
A
V

VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 1.2 A, VGS = 10 V Note5
VDS = 25 V
VGS = 0
f = 1 MHz
Drain to source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
V(BR)DSS
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
RDS(on)
—
—
3.5
—
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
165
21
2.6
11
12
22
22
6.7
1.3
3.8
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDF
—
—
0.9
235
1.5
—
V
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
IDSS
IGSS
VGS(off)
trr
Test Conditions
ID = 10 mA, VGS = 0
ID = 1.2 A
VGS = 10 V
RL = 208 
Rg = 10 
VDD = 400 V
VGS = 10 V
ID = 2.4 A
IF = 2.4 A, VGS = 0 Note5
IF = 2.4 A, VGS = 0
VDD = 400 V
diF/dt = 100 A/s
5. Pulse test
6. Since this device is equipped with high voltage FET chip (VDSS 500 V), high voltage may be supplied.
Therefore, please be sure to confirm about electric discharge between drain terminal and other terminal.
7. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0866EJ0100 Rev.1.00
Aug 08, 2012
Page 2 of 6
RJK5002DPD
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
4
100
10 μ s
0
Drain Current
10
μs
0.1
Operation in this
area is limited by
RDS(on)
0.01
0.001
0.1
1
100
10
0
Drain to Source on State Resistance
RDS(on) (Ω)
1
Ta = 75°C
25°C
−25°C
0.01
0.001
2
4
6
8
Gate to Source Voltage
10
12
16
20
VDS (V)
VGS = 10 V
Ta = 25°C
Pulse Test
10
1
0.1
1
Drain Current
VGS (V)
10
ID (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
16
1000
VGS = 10 V
Ta = 25°C
Pulse Test
ID = 2.4 A
8
0.6 A
4
1.2 A
0
−25
8
100
Static Drain to Source on State Resistance
vs. Temperature (Typical)
12
4
Drain to Source Voltage
Reverse Recovery Time trr (ns)
ID (A)
1
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
VDS = 10 V
Pulse Test
0
5.4 V
VDS (V)
10
0.1
5.8 V
2
0
1000
Typical Transfer Characteristics
Drain Current
3
VGS = 5 V
Tc = 25°C
1 shot
Drain to Source Voltage
Static Drain to Source on State Resistance
RDS(on) (Ω)
7V
10 V
=
1
Drain Current
ID (A)
10
PW
ID (A)
Ta = 25°C
Pulse Test
100
di/dt = 100 A/μs
VGS = 0, Ta = 25°C
10
0
25
50
75
Case Temperature
R07DS0866EJ0100 Rev.1.00
Aug 08, 2012
100 125 150
Tc (°C)
1
3
Reverse Drain Current
10
IDR (A)
Page 3 of 6
RJK5002DPD
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
1
0
50
100
150
200
Drain to Source Voltage
250
800
600
400
12
VDS
4
VDD = 400 V
250 V
100 V
0
0
0
2
VDS (V)
4
6
Gate Charge
8
10
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
8
Gate to Source Cutoff Voltage
VGS(off) (V)
IDR (A)
VDD = 100 V
250 V 8
400 V
200
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current
16
VGS
ID = 2.4 A
Ta = 25°C
VGS (V)
Ta = 25°C
Drain to Source Voltage
Capacitance C (pF)
VGS = 0
f = 1 MHz
Gate to Source Voltage
1000
VDS (V)
Dynamic Input Characteristics (Typical)
4
3
2
VGS = 0
Ta = 25°C
Pulse Test
1
0
0
0.4
0.8
1.2
Source to Drain Voltage
R07DS0866EJ0100 Rev.1.00
Aug 08, 2012
1.6
2.0
VSD (V)
6
ID = 10 mA
4
1 mA
0.1 mA
2
VDS = 10 V
0
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJK5002DPD
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17°C/W, Tc = 25°C
0.1
0.05
0.1 0.02
PDM
0.01
1shot pulse
0.01
100 μ
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width
1
10
100
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
= 250 V
90%
td(on)
R07DS0866EJ0100 Rev.1.00
Aug 08, 2012
tr
90%
td(off)
tf
Page 5 of 6
RJK5002DPD
Preliminary
Package Dimensions
Previous Code
TMP3
0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
0.76
0.1 ± 0.1
1.4 ± 0.2
RENESAS Code
PRSS0004ZG-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Ordering Information
Orderable Part No.
RJK5002DPD-00#J2
R07DS0866EJ0100 Rev.1.00
Aug 08, 2012
Quantity
3000 pcs
Shipping Container
Taping
Page 6 of 6
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