RENESAS UPA2765T1A-E2-AY

Data Sheet
μPA2765T1A
N-channel MOSFET
R07DS0882EJ0102
Rev.1.02
Nov 28, 2012
30 V , 100 A , 1.3 mΩ
Description
The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
Features
• VDSS = 30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A)
⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
• 4.5 V Gate-drive available
• Thin type surface mount package with heat spreader
• Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
μ PA2765T1A-E2-AY∗1
LEAD PLATING
Pure Sn
PACKING
Package
8-pin HVSON(6051)
0.1 g TYP.
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±100
±256
1.5
Unit
V
V
A
A
W
4.6
83
150
−55 to +150
45
203
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
1.5
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0882EJ0102Rev.1.02
Nov 28, 2012
Page 1 of 6
μPA2765T1A
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
MIN.
TYP.
MAX.
10
±100
2.5
1.3
2.9
1.2
1.0
26
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
1.05
1.85
6550
2350
2140
40
90
190
180
152
21
55
Body Diode Forward Voltage ∗1
Reverse Recovery Time
VF(S-D)
trr
0.8
97
Reverse Recovery Charge
Qrr
120
Drain to Source On-state
Resistance ∗1
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Test Conditions
VDS = 30 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 32 A
VGS = 10 V, ID = 46 A
VGS = 4.5 V, ID = 32 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 32 A,
VGS = 10 V,
RG = 10 Ω
VDD = 15 V,
VGS = 10 V,
ID = 64 A
V
ns
IF = 46 A, VGS = 0 V
IF = 50 A, VGS = 0 V,
nC
di/dt = 100 A/μs
Note: ∗1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
0
10%
10%
tr
td(off)
Wave Form
τ
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
ton
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
R07DS0882EJ0102 Rev.1.02
Nov 28, 2012
RL
VDD
Page 2 of 6
μPA2765T1A
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
1000
140
100
i te
Lim
n)
( o 0V
S
RD S=1
VG
100
10
ID - Drain Current - A
dT - Percentage of Rated Power - %
ID(pulse)=256A
120
80
60
40
20
0
25
50
75
100
125
150
175
d
10
0m
s
Power Dissipation Limited
1
0.1
Tc=25°C
Single Pulse
0.01
0.01
0
PW
=2
00
us
1m
s
10
m
s
0.1
1
10
100
VDS - Drain to Source Voltage – V
TC - Case Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
Single pulse
Rth(ch-A) = 83.3 °C/W
100
10
Rth(ch-C = 1.5 °C/W
1
0.1
Rth(ch-A) : Mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt)
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
150
300
125
250
100
200
ID - Drain Current - A
ID(DC) - Drain Current(DC) - A
DRAIN CURRENT(DC) vs. CASE TEMPERATURE
75
50
25
VGS=10V
VGS=4.5V
150
100
50
Pulsed
0
0
0
25
50
75
100
125
TC - Case Temperature - °C
R07DS0882EJ0102 Rev.1.02
Nov 28, 2012
150
175
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VDS - Drain to Source Voltage - V
Page 3 of 6
μPA2765T1A
FORWARD TRANSFER CHARACTERISTICS
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
TA=150°C
75°C
25°C
-55°C
10
ID - Drain Current - A
VGS(off) – Gate to Source Cut-off Voltage - V
100
1
0.1
0.01
VDS = 10V
Pulsed
0.001
0
1
2
3
4
5
2
1
VDS = 10V
ID=1.0mA
0
-50
0
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CURRENT
DRAIN CURRENT
10
TA=150°C
75°C
25°C
-55°C
1
0.1
VDS = 10V
Pulsed
0.01
0.01
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs. DRAIN
100
| yfs | - Forward Transfer Admittance - S
100
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
3.5
3.0
2.5
VGS=4.5V
2.0
1.5
VGS=10V
1.0
0.5
Pulsed
0.0
1
ID - Drain Current - A
10
CHANNEL TEMPERATURE
ID=46A
Pulsed
6
4
2
0
2
4
6
8
VGS - Gate to Source Voltage - V
R07DS0882EJ0102 Rev.1.02
Nov 28, 2012
10
RDS(on) - Drain to Source On-state Resistance - mΩ
10
0
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
RDS(on) - Drain to Source On-state Resistance - mΩ
50
3.0
Pulsed
2.5
VGS=4.5V
ID=32A
2.0
1.5
VGS=10V
ID=46A
1.0
0.5
0.0
-50
0
50
100
150
Tch - Channel Temperature - °C
Page 4 of 6
μPA2765T1A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
10000
Ciss
Coss
1000
Crss
VGS = 0V
f = 1.0MHz
100
0.1
1
10
100
td(on),tr,td(off),tr – Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
100000
VDD = 15V
VGS=10V
RG=10Ω
tf
1000
td(of f )
100
tr
td(on)
10
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
12
1000
VGS=10V
100
VDD= 6V
15V
24V
8
IF - Diode Forward Current - A
VGS - Gate to Source Voltage – V
10
6
4
2
ID=64A
0
0
40
80
120
QG - Gate Charge - nC
R07DS0882EJ0102 Rev.1.02
Nov 28, 2012
160
200
4.5V
10
0V
1
0.1
Pulsed
0.01
0
0.4
0.8
1.2
VF(S-D) - Source to Drain Voltage - V
Page 5 of 6
μPA2765T1A
Package Drawings (Unit: mm)
1.27
8pin-HVSON(6051)
1
5
+0.1
5 ±0.2
6
4
0.42 −0.05
7
3
6 ±0.2
5.15 ±0.2
8
2
0.10 S
1.0 MAX.
1
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
4.1 ±0.2
0.2
0.27 ±0.05
0
+0.05
−0
0.10 M
5.4 ±0.2
3.65 ±0.2
0.6 ±0.15
0.7 ±0.15
RENESAS Package code : PVSN0008DA-A
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0882EJ0102 Rev.1.02
Nov 28, 2012
Page 6 of 6
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Colophon 2.2