ROHM DTC143TSA

DTC143TM / DTC143TE / DTC143TUA
DTC143TKA / DTC143TSA
Transistors
Digital transistors (built-in resistor)
DTC143TM / DTC143TE / DTC143TUA /
DTC143TKA / DTC143TSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
!Equivalent circuit
C
B
R1
E
B : Base
C : Collector
E : Emitter
!Structure
PNP digital transistor
(Built-in resistor type)
!External dimensions (Units : mm)
DTC143TM
1.2
0.8
0.2
DTC143TE
0.2
1.6±0.2
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Abbreviated symbol : 03
0.7±0.1
+0.1
0.2−0.05
(2)
(3)
0.55±0.1
+0.1
0.3 −0.05
ROHM : EMT3
0~0.1
(1) Emitter
(2) Base
(3) Collector
0.1Min.
0.22
0.5
0.13
0~0.1
(1)
0.15Max.
0.5 0.5
0.8±0.1
+0.1
0.2−0.05
(1)
1.6±0.2
0.8
(3)
0.4 0.4
1.2
0.32
1.0±0.1
(2)
0.15±0.05
Abbreviated symbol : 03
DTC143TKA
2.0±0.2
0.8±0.1
0.95 0.95
(2)
(2)
0~0.1
(3)
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 03
ROHM : SMT3
EIAJ : SC-59
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
Abbreviated symbol : 03
DTC143TSA
2±0.2
(15Min.)
5
ROHM : SPT
EIAJ : SC-72
3Min.
3±0.2
4±0.2
0.15
0.45+
−0.05
0.4
2.5 +
−0.1
(1) (2) (3)
0.5
0~0.1
0.15
0.45 +
−0.05
(1) Emitter
(2) Collector
(3) Base
0.3Min.
0.3+0.1
0.15±0.05
−0
All terminals have same dimensions
2.8±0.2
2.1±0.1
(1)
1.6+0.2
−0.1
(3)
ROHM : UMT3
EIAJ : SC-70
1.1+0.2
−0.1
1.9±0.2
0.7±0.1
0.2
1.25±0.1
(1)
2.9±0.2
0.9±0.1
1.3±0.1
0.65 0.65
0.1Min.
DTC143TUA
(1) Emitter
(2) Base
(3) Collector
DTC143TM / DTC143TE / DTC143TUA
DTC143TKA / DTC143TSA
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Limits(DTC143T
Symbol
M
E
UA
)
Unit
KA
SA
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
PC
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
150
200
300
mW
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
50
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50µA
ICBO
−
−
0.5
µA
VCB=50V
IEBO
−
−
0.5
µA
VEB=4V
VCE(sat)
−
−
0.3
V
IC/IB=5mA/0.25mA
IC=1mA, VCE=5V
Parameter
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Conditions
DC current transfer ratio
hFE
100
250
600
−
Input resistance
R1
3.29
4.7
6.11
kΩ
Transition frequency
fT
−
250
−
MHz
−
VCE=10V, IE=−5mA, f=100MHz
∗ Transition frequency of the device
!Packaging specifications
Type
Package
VMT3
EMT3
UMT3
SMT3
SPT
Packaging type
Taping
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
TP
Basic ordering
unit (pieces)
8000
3000
3000
3000
5000
−
−
−
−
−
−
−
−
−
DTC143TM
DTC143TE
−
DTC143TUA
−
−
DTC143TKA
−
−
−
DTC143TSA
−
−
−
−
−
∗
DTC143TM / DTC143TE / DTC143TUA
DTC143TKA / DTC143TSA
Transistors
1k
VCE=5V
DC CURRENT GAIN : hFE
500
200
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
1
100µ 200µ 500µ 1m
2m
5m
10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
!Electrical characteristic curves
1
lC/lB=20
500m
200m
Ta=100°C
25°C
−40°C
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m
2m
5m
10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0