RENESAS UPA802T

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA802T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The µPA802T has built-in 2 low-voltage transistors which are designed
PACKAGE DRAWINGS
to amplify low noise in the VHF band to the UHF band.
(Unit: mm)
2.1±0.1
FEATURES
1.25±0.1
6
4
• A Mini Mold Package Adopted
5
1
2
3
1.3
0.65 0.65
|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
X Y
2.0±0.2
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
0.2 –0
+0.1
• Low Noise
PART NUMBER
QUANTITY
PACKING STYLE
µPA802T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA802T-T1
+0.1
0.15 –0
0~0.1
ORDERING INFORMATION
0.7
0.9±0.1
• Built-in 2 Transistors (2 × 2SC4227)
PIN CONFIGURATION (Top View)
Taping products
(3 KPCS/Reel)
6
Q1
5
Remark If you require an evaluation sample, please contact an NEC
4
Q2
Sales Representative. (Unit sample quantity is 50 pcs.)
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
150 in 1 element
200 in 2 elements Note
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Base (Q2)
2. Emitter (Q1)
6. Base (Q1)
3. Collector (Q2)
Note 110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3636
(O.D. No. ID-9143)
Date Published April 1995 P
Printed in Japan
©
1995
µPA802T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 10 V, IE = 0
0.8
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.8
µA
DC Current Gain
hFE
Gain Bandwidth Product
VCE = 3 V, IC = 7
fT
Feed-back Capacitance
Noise Figure
hFE Ratio
70
VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre
Insertion Power Gain
mANote 1
VCB = 3 V, IE = 0, f = 1
4.5
7.0
GHz
MHzNote 2
|S21|2
VCE = 3 V, IC = 7 mA, f = 1 GHz
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
hFE1/hFE2
240
0.9
10
12
dB
1.4
VCE = 3 V, IC = 7 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
pF
1.7
dB
0.85
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
GB
Marking
R34
R35
hFE Value
70 to 150
110 to 240
TYPICAL CHARACTERISTICS (TA = 25 °C)
IC - VCE Characteristics
PT - TA Characteristics
Free Air
200
2
Collector Current IC (mA)
Total Power Dissipation PT (mW)
25
El
em
en
ts
Pe
rE
100
in
To
ta
lem
en
l
t
0
50
100
20
A
160 µ
A
µ
0
4
1
120 µ A
15
100 µ A
80 µ A
60 µ A
40µ A
IB = 20 µ A
10
5
0.5
0
150
Ambient Temperature TA (°C)
IC - VBE Characteristics
hFE - IC Characteristics
20
200
VCE = 3 V
100
DC Current Gain hFE
Collector Current IC (mA)
VCE = 3 V
10
0
0.5
Base to Emitter Voltage VBE (V)
2
1.0
Collector to Emitter Voltage VCE (V)
1.0
50
20
10
0.5
1
5
10
Collector Current IC (mA)
50
µPA802T
Cre - VCB Characteristics
fr - IC Characteristics
10
Gain Bandwidth Product fT (GHz)
5.0
Feed-back Capacitance Cre (pF)
f = 1 MHz
2.0
1.0
0.5
0.2
1
Insertion Power Gain l S21e l 2 (dB)
15
2
5
10
20
6
4
2
1.0
5.0
10
50
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
l S21e l 2 - IC Characteristics
l S21e l 2 - f Characteristics
25
VCE = 3 V
f = 1 GHz
10
5
0
0.5
8
0
0.5
50
Insertion Power Gain l S21e l 2 (dB)
0.1
VCE = 3 V
f = 1 GHz
1
5
10
50
VCE = 3 V
IC = 7 mA
20
15
10
5
0
0.1
0.2
0.5
1.0
2.0
5.0
Frequency f (GHz)
Collector Current IC (mA)
NF - IC Characteristics
5
VCE = 3 V
f = 1 GHz
Noise Figure NF (dB)
4
3
2
1
0
0.5
1.0
5.0
10
50
Collector Current IC (mA)
3
µPA802T
S-PARAMETERS
V CE = 3 V, I C = 7 mA, Z O = 50 Ω
FREQUENCY
MHz
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
S22
ANG
100.000
200.000
300.000
400.000
500.000
600.000
700.000
800.000
900.000
1000.000
1100.000
1200.000
1300.000
1400.000
1500.000
1600.000
1700.000
1800.000
1900.000
2000.000
.804
.692
.581
.489
.419
.376
.342
.321
.305
.296
.289
.284
.282
.281
.283
.283
.285
.286
.289
.293
–23.8
–48.6
–70.3
–89.0
–104.9
–117.1
–128.6
–138.4
–147.3
–155.2
–162.2
–169.3
–175.3
179.0
173.8
168.6
163.8
159.9
155.4
151.8
11.631
10.839
9.722
8.519
7.434
6.468
5.729
5.115
4.630
4.207
3.879
3.595
3.349
3.133
2.945
2.780
2.631
2.514
2.390
2.293
154.8
137.5
123.8
112.9
104.1
97.5
91.8
86.7
82.5
78.5
74.8
71.4
68.1
64.8
61.9
58.8
56.2
53.3
50.5
47.8
.023
.040
.050
.060
.067
.075
.082
.089
.096
.104
.111
.119
.127
.136
.143
.151
.160
.168
.177
.186
74.8
64.1
59.9
56.7
55.9
55.6
55.7
56.3
56.1
56.4
56.0
56.4
56.2
56.0
55.4
55.0
54.4
53.9
53.3
52.5
.920
.791
.675
.597
.538
.497
.467
.443
.427
.412
.401
.393
.384
.379
.372
.367
.363
.359
.354
.351
–16.5
–27.7
–33.5
–37.0
–38.7
–40.0
–41.0
–41.7
–42.5
–43.6
–44.6
–45.8
–47.3
–48.8
–50.1
–51.8
–53.7
–55.4
–57.3
–59.2
V CE = 3 V, I C = 5 mA, Z O = 50 Ω
FREQUENCY
MHz
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
S22
ANG
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
.818
.689
.594
.500
.457
.404
.377
.359
.342
.335
.326
.321
.317
.321
.318
.320
.323
.326
.331
.333
–29.4
–54.3
–73.1
–89.8
–102.8
–115.0
–124.4
–134.3
–141.5
–150.3
–155.9
–162.4
–167.2
–173.4
–177.5
176.6
173.2
167.8
165.6
161.4
14.580
12.120
10.142
8.340
7.300
6.211
5.496
4.908
4.450
4.018
3.750
3.410
3.181
2.995
2.802
2.665
2.533
2.369
2.275
2.196
156.2
137.5
124.6
114.4
107.5
101.0
96.8
91.4
88.1
84.7
81.4
78.1
75.6
72.5
69.8
67.3
66.1
63.0
61.0
59.2
.023
.040
.052
.063
.069
.081
.084
.091
.097
.100
.112
.115
.124
.131
.138
.149
.156
.162
.177
.183
79.9
65.1
55.0
58.5
56.4
54.9
59.5
58.4
58.4
61.2
61.8
61.4
62.3
63.9
63.6
66.4
65.3
65.9
65.4
64.5
.932
.824
.716
.620
.577
.525
.511
.471
.458
.440
.442
.417
.412
.411
.407
.400
.394
.394
.390
.384
–14.4
–23.4
–30.3
–32.2
–34.2
–35.1
–36.1
–36.2
–35.3
–36.5
–36.8
–37.8
–38.5
–39.9
–40.4
–41.1
–43.7
–44.3
–45.5
–47.6
ANG
161.6
145.3
133.4
122.4
114.1
107.1
102.2
96.0
92.6
88.1
84.2
79.8
77.4
73.5
71.3
68.0
65.3
63.0
61.4
58.2
MAG
.026
.049
.062
.073
.082
.091
.094
.099
.101
.107
.115
.113
.121
.126
.135
.137
.143
.151
.154
.163
ANG
82.5
63.8
58.7
56.0
53.4
49.7
51.8
51.2
52.9
50.9
53.7
56.6
54.9
56.4
56.4
60.0
59.5
59.4
62.6
62.0
MAG
.962
.895
.811
.732
.680
.624
.603
.568
.540
.523
.512
.500
.489
.483
.477
.477
.466
.461
.456
.464
V CE = 3 V, I C = 3 mA, Z O = 50 Ω
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
4
S11
MAG
.906
.810
.742
.638
.587
.524
.490
.460
.435
.427
.404
.399
.392
.392
.386
.380
.382
.389
.383
.387
S21
ANG
–22.7
–43.7
–60.6
–76.6
–89.8
–102.2
–111.4
–121.4
–129.9
–138.2
–144.9
–151.7
–157.9
–163.6
–169.1
–174.5
–179.7
176.1
172.5
168.3
MAG
9.710
8.541
7.695
6.580
5.934
5.148
4.627
4.181
3.827
3.443
3.199
2.989
2.779
2.638
2.443
2.344
2.239
2.113
2.025
1.922
S12
S22
ANG
–10.6
–18.3
–25.8
–27.7
–31.2
–33.5
–34.4
–35.0
–35.7
–36.7
–36.8
–38.6
–39.2
–40.4
–41.8
–42.4
–44.4
–44.9
–46.9
–48.3
µPA802T
V CE = 3 V, I C = 1 mA, Z O = 50 Ω
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
S11
MAG
1.009
.955
.937
.864
.838
.775
.745
.708
.670
.649
.621
.608
.587
.587
.573
.559
.562
.557
.557
.551
S21
ANG
–14.5
–29.7
–42.6
–56.2
–67.3
–79.3
–88.5
–99.1
–107.9
–116.8
–124.0
–131.8
–138.5
–144.5
–152.6
–157.1
–164.2
–168.9
–173.9
–178.6
MAG
3.544
3.359
3.277
3.034
2.891
2.674
2.485
2.338
2.177
2.052
1.914
1.819
1.713
1.628
1.533
1.464
1.421
1.350
1.296
1.240
S12
ANG
168.8
156.3
147.1
136.6
128.6
120.0
114.2
106.8
101.4
96.0
90.8
86.0
82.4
77.7
73.4
70.3
67.2
64.7
61.1
58.0
MAG
.027
.055
.073
.091
.107
.116
.125
.127
.132
.135
.131
.129
.130
.128
.127
.124
.120
.122
.122
.124
S22
ANG
78.6
73.6
63.4
57.7
51.1
46.6
45.2
41.2
40.2
37.2
36.6
35.4
35.2
36.1
36.0
37.5
39.1
43.3
45.2
48.5
MAG
.994
.969
.947
.898
.865
.824
.803
.776
.740
.723
.719
.700
.691
.681
.662
.660
.658
.658
.641
.643
ANG
–5.6
–10.1
–15.9
–18.8
–22.1
–25.8
–27.5
–29.7
–31.5
–33.7
–34.2
–36.3
–37.6
–39.2
–40.7
–42.7
–44.0
–46.0
–47.8
–50.1
5
µPA802T
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
6