Preliminary Datasheet RJH60A01RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 5 A, VGE = 15 V, Ta = 25°C) • Built-in fast recovery diode (trr = 100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 85 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 5 A, Rg = 5 Ω, Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZK-A (Package name : TO-252A) 4 12 3 C 1. Gate 2. Collector 3. Emitter 4. Collector G E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance Junction temperature Storage temperature Symbol VCES / VR VGES IC IC Note1 IC(peak) IDF IDF(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 10 5 Unit V V A A 15 5 15 29.4 4.25 150 –55 to +150 A A A W °C/ W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Page 1 of 8 RJH60A01RDPD-A0 Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage V(BR)CES Min 600 Zero gate voltage collector current / diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 1 μA VCE = 600 V, VGE = 0 V IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 4.5 — — — — — — — — — — — — — 1.9 2.8 160 12 6 11 2.5 6.7 30 10 40 ±100 7.5 2.3 — — — — — — — — — — nA V V V pF pF pF nC nC nC ns ns ns VGE = ±30 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 5 A, VGE = 15 V Note3 IC = 10 A, VGE = 15 V Note3 tf Eon Eoff Etotal tsc — — — — 3 85 0.13 0.07 0.20 5 — — — — — ns mJ mJ mJ μs FRD Forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 2.0 100 0.20 5.4 — — — — V ns μC A Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Symbol Typ — Max — Unit V Test Conditions IC =10 μA, VGE = 0 VCE = 25 V VGE = 0 V f = 1 MHz VGE = 15 V VCE = 300 V IC = 5 A VCC = 300 V VGE = 15 V IC = 5 A, Rg = 5 Ω Inductive load VCE ≤ 360 V, VGE = 15 V Tj = 100°C IF = 5 A Note3 IF = 5 A diF/dt = 100 A/μs Notes: 3. Pulse test. R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Page 2 of 8 RJH60A01RDPD-A0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 12 Collector Current IC (A) Collector Dissipation Pc (W) 40 30 20 10 0 25 50 75 6 4 2 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 20 PW 10 10 0μ = 10 s Collector Current IC (A) 100 Collector Current IC (A) 8 0 0 μs 1 0.1 0.01 1 15 10 5 Tc = 25°C Single pulse 0 10 1000 100 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 16 16 Tc = 25°C Pulse Test 18 V 12 8 12 V 4 VGE = 10 V 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Tc = 150°C Pulse Test 15 V Collector Current IC (A) Collector Current IC (A) 10 18 V 15 V 12 8 12 V VGE = 10 V 4 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 8 RJH60A01RDPD-A0 Preliminary Collector to Emitter Saturation Voltage VCE(sat) (V) 6 5 4 3 IC = 10 A 2 5A Tc = 25°C Pulse Test 1 8 10 12 14 16 18 6 5 4 IC = 10 A 3 5A 2 Tc = 150°C Pulse Test 1 20 8 14 16 20 18 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Tc = 25°C 150°C 8 4 VCE = 10 V Pulse Test 0 0 4 8 12 16 20 5 VGE = 15 V Pulse Test 4 IC = 10 A 3 5A 3A 2 1 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Frequency Characteristics (Typical) 4 10 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Collector Current IC(RMS) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 12 Gate to Emitter Voltage VGE (V) 12 0 −25 10 Gate to Emitter Voltage VGE (V) 16 Collector Current IC (A) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 0 3 Collector current wave (Square wave) 2 1 0 1 Tj = 125°C Tc = 90°C VCE = 300 V VGE = 15 V Rg = 5 Ω duty = 50% 10 100 1000 Frequency f (kHz) Page 4 of 8 RJH60A01RDPD-A0 Preliminary Switching Characteristics (Typical) (1) 10 Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf 100 td(off) td(on) tr 10 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 Eon Eoff 0.1 0.01 10 1 1 100 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 1 Swithing Energy Losses E (mJ) tf 100 td(off) td(on) tr 10 VCC = 300 V, VGE = 15 V IC = 5 A, Tc = 150°C 1 Eon 0.1 Eoff VCC = 300 V, VGE = 15 V IC = 5 A, Tc = 150°C 0.01 1 10 100 1 Swithing Energy Losses E (mJ) 1000 tf 100 td(off) td(on) tr VCC = 300 V, VGE = 15 V IC = 5 A, Rg = 5 Ω 0 25 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 10 10 Gate Resistance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) Switching Times t (ns) 10 Collector Current IC (A) (Inductive load) 1000 Switching Times t (ns) Switching Characteristics (Typical) (2) 150 1 Eon 0.1 Eoff VCC = 300 V, VGE = 15 V IC =5 A, Rg = 5 Ω 0.01 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 8 RJH60A01RDPD-A0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Ta = 25°C 1000 Cies 100 10 Coes Cres 1 0 50 100 150 200 250 800 600 12 400 8 200 300 0 4 400 200 Tc = 150°C 25°C 80 120 160 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 600 40 1.0 VCC = 300 V IF = 5 A 0.8 0.6 0.4 Tc = 150°C 0.2 25°C 0 200 0 Diode Current Slope diF/dt (A/μs) 40 80 120 160 200 Diode Current Slope diF /dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 20 16 VCC = 300 V IF = 5 A Forward Current IF (A) Reverse Recovery Current Irr (A) 0 16 12 Reverse Recovery Charge vs. Diode Current Slope (Typical) VCC = 300 V IF = 5 A 0 8 Gate Charge Qg (nC) Reverse Recovery Time vs. Diode Current Slope (Typical) 0 4 VCC = 300 V IC = 5 A Tc = 25°C VCE 0 Collector to Emitter Voltage VCE (V) 800 16 VGE Gate to Emitter Voltage VGE (V) Capacitance C (pF) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 16 12 Tc = 150°C 8 25°C 4 12 Tc = 25°C 150°C 8 4 VGE = 0 V Pulse Test 0 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 0 1 2 3 4 5 6 C-E Diode Forward Voltage VCEF (V) Page 6 of 8 RJH60A01RDPD-A0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 3 Tc = 25°C D=1 1 0.5 0.3 θj – c(t) = γs (t) • θj – c θj – c = 4.25°C/W, Tc = 25°C 0.2 0.1 0 0. PDM 5 D= PW T 0.02 0.01 1 shot pulse 0.1 100 μ PW T 1m 10 m 100 m Pulse Width 1 100 10 PW (s) Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% td(off) Diode Reverse Recovery Time Test Circuit tf 10% td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 0.5 Irr 0.9 Irr Page 7 of 8 RJH60A01RDPD-A0 Preliminary Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0004ZK-A 2.7 ± 0.3 Previous Code ⎯ 6.5 ± 0.3 (5.2 ± 0.3) (1.2 Max) 2.29 ± 0.3 MASS[Typ.] 0.322g Unit: mm 2.3 ± 0.2 0.55 ± 0.1 (4.3) (5.2) 1.2 Max 6.1 ± 0.3 1.1 ± 0.3 Package Name TO-252A 0.2 Max 0.75 ± 0.15 0.55 ± 0.1 2.29 ± 0.3 Ordering Information Orderable Part Number RJH60A01RDPD-A0#J2 R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Quantity 3000 pcs Shipping Container Taping Page 8 of 8 Notice 1. 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