RENESAS RJL5014DPP

RJL5014DPP
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1690-0300
Rev.3.00
Jun 13, 2008
Features
•
•
•
•
Built-in fast recovery diode
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
1. Gate
2. Drain
3. Source
G
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW ≤ 10 µs, duty cycle ≤ 1%
Value at Tc = 25°C
STch = 25°C, Tch ≤ 150°C
Limited by maximum safe operation area
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 1 of 6
Symbol
VDSS
Ratings
500
Unit
V
VGSS
Note4
ID
±30
19
57
19
57
4
0.88
35
3.57
150
–55 to +150
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Note1
ID (pulse)
IDR
Note1
IDR (pulse)
Note3
IAP
EARNote3
Pch Note2
θch-c
Tch
Tstg
RJL5014DPP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
500
—
—
2.0
—
Typ
—
—
—
—
0.32
Max
—
10
±0.1
4.0
0.40
Unit
V
µA
µA
V
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1700
190
23
32
27
95
20
43
8.2
21.8
1.00
—
—
—
—
—
—
—
—
—
—
1.65
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
160
—
ns
Body-drain diode reverse recovery time
Notes: 5. Pulse test
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 2 of 6
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9.5 A, VGS = 10 V Note5
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 9.5 A
VGS = 10 V
RL = 26.3 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 19 A
IF = 19 A, VGS = 0 Note5
IF = 19 A, VGS = 0
diF/dt = 100 A/µs
RJL5014DPP
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
10
10
20
Drain Current ID (A)
0 µs
= 10
1
Operation in this
area is limited by
RDS(on)
0.1
6V
8V
µs
PW
Drain Current ID (A)
100
0.01
5.6 V
5.8 V
1
10
100
12
5.0 V
8
4.8 V
4
4.6 V
VGS = 4.4 V
8
12
16
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (Ω)
Typical Transfer Characteristics
10
Tc = 75°C
25°C
1
−25°C
0.1
0
2
4
6
8
10
Pulse Test
VGS = 10 V
1
0.1
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
Body-Drain Diode Reverse
Recovery Time
100
Pulse Test
VGS = 10 V
ID = 19 A
0.6
9.5 A
0.4
3A
0.2
0
-25
Reverse Recovery Time trr (ns)
1000
1.0
0.8
20
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
Drain Current ID (A)
4
Drain to Source Voltage VDS (V)
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
1000
5.2 V
Pulse Test
Ta = 25°C
1 shot
0.001
0.1
5.4 V
10 V
16
100
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 3 of 6
1
10
Reverse Drain Current IDR (A)
100
RJL5014DPP
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
Crss
10
1
0
VGS = 0
f = 1 MHz
50
100
150
250
VDS
200
4
VDD = 400 V
250 V
100 V
0
20
0
40
60
80
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
Pulse Test
VGS = 0, -5 V
10 V
12
5V
8
4
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 4 of 6
12
8
Gate Charge Qg (nC)
16
0
VDD = 100 V
250 V
400 V
600
400
16
VGS
ID = 19 A
Drain to Source Voltage VDS (V)
20
Reverse Drain Current IDR (A)
200
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ciss
800
5
100
VDS = 10 V
4
ID = 10 mA
1 mA
3
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Gate to Source Voltage VGS (V)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
RJL5014DPP
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 3.57°C/W, Tc = 25°C
0.02
0.01
0.01
e
uls
tp
o
sh
PDM
D=
1
0.001
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
= 250 V
90%
td(on)
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 5 of 6
tr
90%
td(off)
tf
RJL5014DPP
Package Dimensions
Package Name
TO-220FN
JEITA Package Code

RENESAS Code
PRSS0003AB-A
Previous Code

MASS[Typ.]
2.0g
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ3.2 ± 0.2
3.6 ± 0.3
15 ± 0.3
10 ± 0.3
14 ± 0.5
Unit: mm
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Part No.
RJL5014DPP-00-T2
Quantity
1050 pcs
REJ03G1690-0300 Rev.3.00 Jun 13, 2008
Page 6 of 6
Shipping Container
Box (Tube)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2