BSS138

BSS138
N-Channel 50-V(D-S) MOSFET
V(BR)DSS
ID
RDS(on)MAX
SOT-23
[email protected]
50 V
220mA
[email protected] 1. GATE
2. SOURCE
3. DRAIN
FEATURE
z High density cell design for extremely low RDS(on)
z Rugged and Relaible
APPLICATION
z
Direct Logic-Level Interface: TTL/CMOS
z
Drivers: Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
z
Battery Operated Systems
z
Solid-State Relays
Equivalent Circuit
MARKING
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
50
Continuous Gate-Source Voltage
VGSS
±20
Continuous Drain Current
ID
0.22
A
Power Dissipation
PD
0.35
W
RθJA
357
℃/W
Tj
150
Tstg
-55 ~+150
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
1
V
℃
MOSFET ELECTRICAL CHARACTERISTICS
BSS138
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Gate-body leakage
IGSS
VDS =0V, VGS =±20V
±100
nA
Zero gate voltage drain current
IDSS
VDS =50V, VGS =0V
0.5
µA
VDS =30V, VGS =0V
100
nA
1.50
V
50
V
On characteristics
Gate-threshold voltage (note 1)
VGS(th)
Static drain-source on-resistance (note 1)
RDS(on)
Forward transconductance (note 1)
gFS
VDS =VGS, ID =1mA
0.80
VGS =10V, ID =0.22A
3.50
VGS =4.5V, ID =0.22A
6
VDS =10V, ID =0.22A
0.12
Ω
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
27
VDS =25V,VGS =0V, f=1MHz
pF
13
6
Switching characteristics
Turn-on delay time (note 1,2)
Rise time (note 1,2)
Turn-off delay time (note 1,2)
Fall time (note 1,2)
td(on)
5
tr
VDD=30V, VDS=10V,
18
td(off)
ID =0.29A,RGEN=6Ω
36
tf
ns
14
Drain-source body diode characteristics
Body diode forward voltage (note 1)
VSD
IS=0.44A, VGS = 0V
Notes:
1.
Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2.
These parameters have no way to verify.
2
1.4
V
Typical Characteristics
Output Characteristics
2.0
Transfer Characteristics
0.6
Ta=25℃
Ta=25℃
Pulsed
Pulsed
1.5
0.5
5V
(A)
(A)
VGS=10V
ID
DRAIN CURRENT
DRAIN CURRENT
ID
0.4
4V
1.0
0.5
0.3
0.2
3V
0.1
2V
0.0
0.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
3.0
VDS
5
0
1
2
3
GATE TO SOURCE VOLTAGE
(V)
ID
RDS(ON) ——
6
VGS
4
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
Pulsed
5
( )
RDS(ON)
2.0
VGS=4.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
( )
2.5
1.5
VGS=6V
VGS=10V
1.0
0.5
0.0
0.1
0.4
0.6
0.8
ID
1.0
(A)
2
IS —— VSD
Pulsed
0.3
0.1
0.03
0.01
3E-3
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
VSD (V)
0
2
4
6
GATE TO SOURCE VOLTAGE
Ta=25℃
IS (A)
ID=500mA
0
0.2
1
SOURCE CURRENT
3
1
DRAIN CURRENT
1E-3
0.2
4
1.2
1.4
8
VGS
(V)
10
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°