BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX SOT-23 3.5Ω@10V 50 V 220mA 6Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible APPLICATION z Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. z Battery Operated Systems z Solid-State Relays Equivalent Circuit MARKING Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 Continuous Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 0.22 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Tj 150 Tstg -55 ~+150 Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature 1 V ℃ MOSFET ELECTRICAL CHARACTERISTICS BSS138 Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 µA VDS =30V, VGS =0V 100 nA 1.50 V 50 V On characteristics Gate-threshold voltage (note 1) VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gFS VDS =VGS, ID =1mA 0.80 VGS =10V, ID =0.22A 3.50 VGS =4.5V, ID =0.22A 6 VDS =10V, ID =0.22A 0.12 Ω S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 27 VDS =25V,VGS =0V, f=1MHz pF 13 6 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) td(on) 5 tr VDD=30V, VDS=10V, 18 td(off) ID =0.29A,RGEN=6Ω 36 tf ns 14 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. 2 1.4 V Typical Characteristics Output Characteristics 2.0 Transfer Characteristics 0.6 Ta=25℃ Ta=25℃ Pulsed Pulsed 1.5 0.5 5V (A) (A) VGS=10V ID DRAIN CURRENT DRAIN CURRENT ID 0.4 4V 1.0 0.5 0.3 0.2 3V 0.1 2V 0.0 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 3.0 VDS 5 0 1 2 3 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) —— 6 VGS 4 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 5 ( ) RDS(ON) 2.0 VGS=4.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) ( ) 2.5 1.5 VGS=6V VGS=10V 1.0 0.5 0.0 0.1 0.4 0.6 0.8 ID 1.0 (A) 2 IS —— VSD Pulsed 0.3 0.1 0.03 0.01 3E-3 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 0 2 4 6 GATE TO SOURCE VOLTAGE Ta=25℃ IS (A) ID=500mA 0 0.2 1 SOURCE CURRENT 3 1 DRAIN CURRENT 1E-3 0.2 4 1.2 1.4 8 VGS (V) 10 Symbol A A1 A2 b c D E E1 e e1 L L1 Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6°