MSF16N50 500V N-Channel MOSFET Description The MSF16N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • RDS(on) (Typical 0.33Ω)@VGS=10V • Gate Charge (Typical 60nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • RoHS compliant package Application • Switching Mode Power Supply • LCD Panel Power • Adapter • E-bike Charger Graphic symbol Packing & Order Information 50/Tube ; 1,000/Box MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 16 A Drain Current -Continuous (TC=100°C) 10 A IDM Drain Current Pulsed 64 A EAS Single Pulsed Avalanche Energy 995 mJ EAR Repetitive Avalanche Energy 24.5 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns ID Publication Order Number: [MSF16N50] © Bruckewell Technology Corporation Rev. A -2014 MSF16N50 500V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter PD TJ,TSTG TL Value Unit Power Dissipation (TC = 25 °C) 205 W Derate above 25°C 2.1 W/°C -55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds • Drain current limited by maximum junction temperature Thermal characteristics (Tc=25°C unless otherwise noted) Symbol Parameter Max. RθJC Junction-to-Case 2.8 RθJA Junction-to-Ambient 62.5 Units °C/W On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units 3.0 -- 5.0 V -- 0.33 0.38 Ω VGS Gate Threshold Voltage VDS=VGS,ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V,ID=8A Off Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0 V , ID=250μA 500 -- -- V △BVDSS Breakdown Voltage Temperature Coefficient -- 0.5 -- V/°C /△TJ ID=250μA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS=30V , VDS=0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS=-30V , VDS=0 V -- -- -100 nA Min Typ. Max. Units -- 2300 -- pF -- 330 -- pF -- 35 -- pF Dynamic Characteristics Symbol Parameter CISS VDS=500V , VGS= 0 V VDS=400V , TC= 125°C Test Conditions Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Publication Order Number: [MSF16N50] VDS=25V, VGS=0V, f=1.0MHz 100 © Bruckewell Technology Corporation Rev. A -2014 MSF16N50 500V N-Channel MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 5 -- ns td(on) Turn-On Time tr Turn-On Time VDS=250 V, ID=16A, -- 180 -- ns td(off) Turn-Off Delay Time RG=25Ω -- 130 -- ns tf Turn-Off Fall Time -- 100 -- ns Qg Total Gate Charge -- 60 -- nC Qgs Gate-Source Charge -- 14 -- nC Qgd Gate-Drain Charge -- 28 -- nC Min Typ. Max. Units VDS=400V,ID=16A, VGS=10 V Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current -- -- 16 ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 64 VSD Source-Drain Diode Forward Voltage IS=16A , VGS= 0V -- -- 1.5 V trr Reverse Recovery Time IS=16A , VGS= 0V -- 340 -- ns Qrr Reverse Recovery Charge diF/dt=100A/μs -- 3.4 -- μC A Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 5.0mH, IAS =16.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Publication Order Number: [MSF16N50] © Bruckewell Technology Corporation Rev. A -2014 MSF16N50 500V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSF16N50] © Bruckewell Technology Corporation Rev. A -2014