MSF7N65 650V N-Channel MOSFET GENERAL DESCRIPTION The MSF7N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant / Halogen free package available Symbol Parameter Value Units VDSS Drain to Source Voltage 650 V VGS Gate to Source Voltage ±30 V Continuous Drain Current(@TC = 25 °C) 7.0 A Continuous Drain Current(@TC = 100 °C) 4.2 A IDM Drain Current Pulsed 28 A EAS Single Pulsed Avalanche Energy 230 mJ IAR Avalanche Current 7.0 A EAR Repetitive Avalanche Energy 14.7 mJ Peak Diode Recovery dv/dt 4.5 V/ns Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) 300 °C 260 °C 48 W 0.38 W/°C -55 ~ 150 °C 150 °C ID dv/dt TL from case for 10 seconds TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds PD Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C TSTG TJ Operating Junction Temperature Storage Temperature Note: 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25°C. 3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25°C. ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case - - 2.6 °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, 650 - - V - 0.70 - V/°C 2.0 - 4.0 V - - 1 uA - - 10 uA ID = 250 uA ΔBVDSS/ ΔTJ VGS(th) Breakdown Voltage Temperature ID = 250 uA, referenced to 25 coefficient °C Gate Threshold Voltage VDS = VGS, ID = 250 uA IDSS Drain-Source Leakage Current VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125 °C IGSS RDS(ON) Gate-Source Leakage, Forward VGS=±30 - - ±100 nA Static Drain-Source On-state VGS = 10 V, - 1.2 1.4 Ω Resistance ID = 3.5 A - 29 - - 4.7 - - 12.5 - ID=7A, - 20 - VDD=325V, - 50 - Turn-off Delay Time VGS=10V - 80 - Fall Time RG=10Ω - 70 - - 1482 - Dynamic Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Miller Charge) td(on) tr td(off) tf Turn-on Delay Time Rise Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ID=7A, VDD=520V, VGS=10V VGS=0V, VDS=25V, f=1MHz - 121.7 - - 14 - nC ns pF ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET Symbol Parameter Test Conditions Min Typ Max Units Source-Drain Diode VSD IS=7.0A, VGS=0V - - 1.4 V IS VD=VG=0, - - 7.0 A ISM VS=1.3V - - 28 A - 350 - ns - 3.3 - uC trr Qrr VGS=0, IF=7A, dI/dt=100A/us *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET • Characteristic Curves Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current Figure 4. Body Diode Forward Voltage Variation with and Gate Voltage Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET • Characteristic Curves Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET Package Dimensions Dimensions in Millimeters ©Bruckewell Technology Corporation Rev. A -2012 MSF7N65 650V N-Channel MOSFET Legal Disclaimer Notice Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. ©Bruckewell Technology Corporation Rev. A -2012