MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Low power battery chargers • Switch mode power supply (SMPS) • DC-AC converters. Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Continuous Drain Current (TC=25°C) 4.5 A Continuous Drain Current (TC=100°C) 2.6 A Pulsed Drain Current 18 A ID IDM Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit EAS Single Pulsed Avalanche Energy 33 mJ IAR Avalanche Current 4.0 A EAR Repetitive Avalanche Energy 10 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns Power Dissipation (TC=25°C) 31 W Derating Factor above 25 °C 0.25 W Storage Temperature 150 °C 300 °C PD TJ TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds Note: 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C. 3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C. Thermal Resistance Characteristics (Tc=25°C unless otherwise noted) Value Typ. Symbol Parameter RθJC Thermal Resistance,Junction-to-Case -- -- 2.8 RθJA Thermal Resistance,Junction-to- Ambient -- -- 50 Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage Min. Min Typ. Max. Units VGS = 0 V , ID=250μA 600 -- -- V -- 0.60 -- V/°C 2.0 -- 4.0 V -- -- VGS = ±30 -- -- ±100 nA VGS = 10 V , ID = 2.25 A -- 2.0 25 Ω Breakdown Voltage /△TJ Temperature Coefficient VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250μA Drain-Source Leakage VDS = 600 V , VGS = 0 V Current VDS = 480 V , TC = 125°C IGSS RDS(ON) Gate-Body Leakage Forward Static Drain-Source On-Resistance Publication Order Number: [MSD4N60] °C/W Test Conditions △BVDSS IDSS Units Max. ID = 250μA, Referenced to 25°C 1 10 uA © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET Dynamic Characteristics Symbol Parameter CISS Test Conditions Input Capacitance VDS = 25 V, VGS = 0 V, Min Typ. Max. Units -- 560 -- pF -- 55 -- pF COSS Output Capacitance CRSS Reverse Transfer Capacitance -- 7 -- pF td(on) Turn-On Time -- 10 30 ns tr Turn-On Time VDD = 300 V, ID = 4.5 A, -- 40 80 ns td(off) Turn-Off Delay Time RG = 25 Ω , VGS = 10 V -- 40 100 ns tf Turn-Off Fall Time -- 50 90 ns Qg Total Gate Charge -- 16 -- nC -- 2.5 -- nC -- 6.5 -- nC Min Typ. Max. Units -- -- 4.0 -- -- 16 Qgs Gate-Source Charge Qgd Gate-Drain Charge Source-Drain Diode Symbol Parameter F = 1.0MHz VDD = 480 V,ID = 4.5 A, VGS = 10 V Test Conditions IS ISM VD = VG = 0 A VSD IS = 4.0 A , VGS = 0 V -- -- 1.4 V trr IF = 4.0 A , VGS = 0 V -- 270 -- ns Qrr diF/dt = 100A/μs -- 18 -- uC *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION CURRENT AND GATE VOLTAGE WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET ■Characteristics Test Circuit & Waveform Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014 MSD4N60 600V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSD4N60] © Bruckewell Technology Corporation Rev. A -2014