MSF4N65 - Bruckewell Technology Ltd.

MSF4N65
650V N-Channel MOSFET
Description
The MSF4N65 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Originative New Design
• 100% EAS Test
• Rugged Gate Oxide Technology
• Extremely Low Intrinsic Capacitances
• Remarkable Switching Characteristics
• Unequalled Gate Charge: 15 nC (Typ.)
• Extended Safe Operating Area
• Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V
Application
• Low power battery chargers
• Switch mode power supply (SMPS)
Graphic symbol
• DC-AC converters
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
4.0
A
Drain Current -Continuous (TC=100°C)
2.3
A
IDM
Drain Current Pulsed
14.4
A
IAR
Avalanche Current
4.5
A
EAS
Single Pulsed Avalanche Energy
240
mJ
ID
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N65
650V N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
EAR
Repetitive Avalanche Energy
3.6
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
Total Power Dissipation (TC=25°C)
33
W
0.26
W/°C
-55 to +150
°C
300
°C
PD
TJ,TSTG
TL
Derating Factor above 25 °C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
•Drain current limited by maximum junction temperature
Thermal Characteristics (Tc=25°C unless otherwise noted)
Symbol
Parameter
Max.
RθJC
Junction-to-Case
3.3
RθJA
Junction-to-Ambient
62.5
°C/W
On Characteristics
Symbol
Parameter
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Off Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
△BVDSS
Breakdown Voltage
/△TJ
Temperature Coefficient
IDSS
IGSSF
IGSSR
Test Conditions
Min
Typ.
Max.
Units
VDS = VGS,ID = 250μA
2.0
--
4.0
V
VGS = 10 V,ID = 3.0 A
--
2.0
2.5
Ω
Test Conditions
Min
Typ.
Max.
Units
VGS = 0 V , ID = 250μA
600
710
--
V
--
0.6
--
V/°C
--
--
1
μA
VGS = 30 V , VDS = 0 V
--
--
100
nA
VGS = -30 V , VDS = 0 V
--
--
-100
nA
Test Conditions
Min
Typ.
Max.
Units
--
545
710
pF
--
60
80
pF
--
8
11
pF
ID = 250μA, Referenced to 25°C
Zero Gate Voltage Drain
VDS = 600 V , VGS = 0 V
Current
VDS = 480 V , TC = 125°C
Gate-Body Leakage
Current, Forward
Gate-Body Leakage
Current, Reverse
Dynamic Characteristics
Symbol
Parameter
CISS
Units
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Publication Order Number: [MSF4N65]
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
10
© Bruckewell Technology Corporation Rev. A -2014
MSF4N65
650V N-Channel MOSFET
Switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
10
30
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS = 325 V, ID = 4.0 A,
--
35
80
ns
td(off)
Turn-Off Delay Time
RG = 25 Ω
--
45
100
ns
tf
Turn-Off Fall Time
--
40
90
ns
Qg
Total Gate Charge
--
15
20
nC
--
2.8
--
nC
--
6.0
--
nC
Min
Typ.
Max.
Units
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 520 V,ID = 4.0 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source-Drain Diode Forward Current
--
--
3.6
ISM
Pulsed Source-Drain Diode Forward Current
--
--
16
VSD
Source-Drain Diode Forward Voltage
IS = 4.0 A , VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
IF = 4.0 A , VGS = 0 V
--
300
--
ns
Qrr
Reverse Recovery Charge
diF/dt=100A/μs
--
2.2
--
μC
A
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS=4A, VDD=50V, RG=25W, Starting TJ=25℃
3. ISD≦4A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N65
650V N-Channel MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N65
650V N-Channel MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014
MSF4N65
650V N-Channel MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSF4N65]
© Bruckewell Technology Corporation Rev. A -2014