RENESAS NE3519M04

PreliminaryData Sheet
NE3519M04
N-channel GaAs HJ-FET, L to C Band Low Noise
R09DS0008EJ0100
Rev.1.00
Oct
21, 2010
Amplifier
FEATURES
• Low noise figure and high associated gain
NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, etc.)
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3519M04-T2
Order Number
NE3519M04-T2-A
NE3519M04-T2B
NE3519M04-T2B-A
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Quantity
3 kpcs/reel
Marking
V85
15 kpcs/reel
Supplying Form
• Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note:
Symbol
VDS
VGS
ID
IG
Ptot
Tch
Tstg
Ratings
4.0
−3.0
IDSS
200
150
+150
−65 to +150
Unit
V
V
mA
μA
mW
°C
°C
Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 1 of 11
NE3519M04
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
−
−
−
TYP.
2
10
−
MAX.
3
25
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
IGSO
IDSS
VGS (off)
gm
NF
Ga
Test Conditions
VGS = −3.0 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 50 μA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 2 GHz
MIN.
−
30
−0.25
80
−
16.5
TYP.
0.5
45
−0.50
−
0.40
18.5
MAX.
10
60
−0.75
−
0.70
−
Unit
μA
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise
specified)
Parameter
Symbol
Gain 1 dB Compression Output
Power
PO (1 dB)
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Test Conditions
VDS = 2 V, ID = 10 mA set (Non-RF),
f = 2 GHz
Reference Value
+11
Unit
dBm
Page 2 of 11
NE3519M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation Ptot (mW)
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0
50
100
150
200
250
Ambient Temperature TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
100
VDS = 2 V
40
Drain Current ID (mA)
35
30
25
20
15
10
80
60
VGS = 0 V
40
–0.1 V
–0.2 V
20
–0.3 V
–0.4 V
–0.5 V
5
–0.8
–0.6
–0.4
–0.2
0
1
0
2
3
4
5
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0
20
1.8
18
1.6
16
1.4
14
Ga
1.2
12
1.0
10
0.8
8
6
0.6
NFmin
0.4
4
VDS = 2 V
ID = 10 mA
0.2
0.0
0
2
4
6
8
10 12
14
16 18
2
0
20
Frequency f (GHz)
Minimum Noise Figure NFmin (dB)
Gate to Source Voltage VGS (V)
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
0
–1.0
2.0
20
1.8
18
1.6
16
14
1.4
Ga
1.2
12
1.0
10
0.8
8
0.6
6
NFmin
0.4
4
VDS = 2 V
ID = 25 mA
0.2
0.0
0
2
4
6
8
10 12
14
16 18
Associated Gain Ga (dB)
Drain Current ID (mA)
45
2
0
20
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 3 of 11
NE3519M04
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
16
1.0
14
0.8
12
10
0.6
NFmin
0.4
8
0.2
0.0
6
0
5
10
15
20
25
Minimum Noise Figure NFmin (dB)
Ga
1.2
Associated Gain Ga (dB)
18
1.4
20
1.6
f = 2.0 GHz, VDS = 2 V
f = 2.5 GHz, VDS = 2 V
1.2
16
Ga
1.0
14
0.8
12
0.6
10
NFmin
0.4
8
0.2
0.0
4
30
18
1.4
Associated Gain Ga (dB)
20
1.6
Minimum Noise Figure NFmin (dB)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
6
0
5
10
15
20
25
4
30
Drain Current ID (mA)
Drain Current ID (mA)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
16
Ga
1.0
14
0.8
12
10
0.6
NFmin
0.4
8
0.2
0.0
1.0
6
1.5
2.0
2.5
3.0
4
3.5
Drain to Source Voltage VDS (V)
Minimum Noise Figure NFmin (dB)
1.2
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
18
1.4
20
1.6
f = 2.0 GHz, ID = 10 mA
f = 2.5 GHz, ID = 10 mA
18
1.4
16
1.2
Ga
1.0
14
0.8
12
0.6
10
NFmin
0.4
8
0.2
0.0
1.0
Associated Gain Ga (dB)
20
1.6
6
1.5
2.0
2.5
3.0
4
3.5
Drain to Source Voltage VDS (V)
Remark The graphs indicate nominal characteristics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 4 of 11
NE3519M04
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
MSG
10
2.0
MAG
1.5
5
1.0
K factor
0
0
2.5
2
4
6
0.5
VDS = 2 V,
ID = 10 mA
15
–10
|S21|2
–15
10
|S12|
2
–20
5
0
0
0.0
8 10 12 14 16 18 20 22 24
–5
20
2
4
6
–25
8 10 12 14 16 18 20 22 24
Frequency f (GHz)
Frequency f (GHz)
MAG, MSG, K FACTOR vs. FREQUENCY
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
5.0
VDS = 2 V, 4.5
ID = 25 mA
4.0
20
3.5
15
3.0
MSG
10
2.0
MAG
5
1.5
1.0
K factor
0
0
2.5
2
4
6
0.5
0.0
8 10 12 14 16 18 20 22 24
Frequency f (GHz)
0
25
Insertion Power Gain |S21|2 (dB)
25
Isolation |S12|2 (dB)
3.0
K factor K
3.5
15
Insertion Power Gain |S21|2 (dB)
20
0
25
VDS = 2 V,
ID = 25 mA
–5
20
|S21|2
15
–10
10
–15
|S12|2
–20
5
0
0
Isolation |S12|2 (dB)
5.0
VDS = 2 V, 4.5
ID = 10 mA
4.0
25
K factor K
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
MAG, MSG, K FACTOR vs. FREQUENCY
2
4
6
–25
8 10 12 14 16 18 20 22 24
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 5 of 11
NE3519M04
OUTPUT POWER, POWER GAIN, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
25
80
GP
20
f = 2 GHz, VDS = 2 V,
ID = 10 mA set,
PO (1 dB) optimize
60
10
50
5
40
Pout
0
30
Drain Current ID (mA)
Gate Current IG (mA)
15
Output Power Pout (dBm)
Power Gain GP (dBm)
70
ID
–5
20
–10
10
IG
–15
–30
–25
–20
–15
–10
–5
0
5
10
0
15
Input Power Pin (dBm)
OUTPUT POWER, IM3, DRAIN CURRENT
vs. INPUT POWER
20
100
f1 = 2 000 MHz
f2 = 2 001 MHz
90
80
10
Pout (2 tone)
0
70
–10
60
–20
50
IM3 (L)
–30
40
IM3 (H)
–40
30
–50
20
ID
–60
–70
–30
Drain Current ID (mA)
Output Power Pout (2 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
30
VDS = 2 V, ID = 10 mA set,
PO (1 dB) optimize
–25
–20
–15
–10
–5
0
5
10
0
10
Input Power Pin (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 6 of 11
NE3519M04
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 7 of 11
NE3519M04
MOUNTING PAD LAYOUT DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
3
4
0.5
1
1.3
1.25
0.6
2
1.6
0.6
Remark The mounting pad layout in this document is for reference only.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 8 of 11
NE3519M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
2.0±0.1
2
1
1.25
3
4
1.30
0.65
1.30
3
4
0.30+0.1
–0.05
0.11+0.1
–0.05
1
0.30+0.1
–0.05
0.59±0.05
(1.05)
0.65
0.60
0.65
1.25
2
1.25±0.1
V85
2.0±0.1
(Bottom View)
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Source
Gate
Remark ( ): Reference value
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 9 of 11
NE3519M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 10 of 11
NE3519M04
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 11 of 11
Revision History
Rev.
1.00
Date
Oct 21, 2010
NE3519M04 Data Sheet
Description
Summary
Page
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
(Note 2)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan, R.O.C.
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0