RENESAS RJK60S5DPK

Preliminary Datasheet
RJK60S5DPK-M0
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0245EJ0300
Rev.3.00
Feb 06, 2012
Features
 Low on-resistance
RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name:TO-3PSG)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
Ratings
600
+30, 20
20
40
20
40
5
1.36
192.3
Unit
V
V
A
A
A
A
A
mJ
W
ch-c
Tch
Tstg
0.65
150
–55 to +150
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
R07DS0245EJ0300 Rev.3.00
Feb 06, 2012
Page 1 of 6
RJK60S5DPK-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
—
—
3
—
Typ
—
—
—
—
0.150
Max
—
1
±0.1
5
0.178
Unit
V
mA
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
2100
2540
3.8
38
34
55
20
29
15
6
0.96
—
—
—
—
—
—
—
—
—
—
1.60
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = +30V, 20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 100kHz
ID = 10 A
VGS = 10 V
RL = 30 
Rg = 10 
VDD = 480 V
VGS = 10 V
ID = 20 A
IF = 20 A, VGS = 0 Note4
Notes: 4. Pulse test
R07DS0245EJ0300 Rev.3.00
Feb 06, 2012
Page 2 of 6
RJK60S5DPK-M0
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
100
40
Ta = 25°C
Pulse Test
ID (A)
Drain Current
10
Operation in this area
is limited by RDS(on)
1
Tc = 25°C
1 shot
10
100
Drain to Source on State Resistance
RDS(on) (Ω)
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
1
10
Drain Current
100
Ciss
1000
Coss
10
Crss
1
0.1
100
150
200
Drain to Source Voltage
R07DS0245EJ0300 Rev.3.00
Feb 06, 2012
250
8
12
16
20
VDS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
0.5
VGS = 10 V
Pulse Test
0.4
ID = 15 A
0.3
5A
0.2
10 A
0.1
0
-25
0
25
50
75
100 125 150
Tc (°C)
Dynamic Input Characteristics (Typical)
Ta = 25°C
100
4
Case Temperature
VDS (V)
VGS = 0
f = 100 kHz
0
ID (A)
Drain to Source Voltage
Capacitance C (pF)
6V
Drain to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
50
10
VDS (V)
1
0
7V
20
0
1000
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10000
10V
12V
VGS = 5 V
Drain to Source Voltage
100000
15 V
30
300
VDS (V)
800
ID = 20 A
Ta = 25°C
VGS
600
12
VDD = 480 V
300 V
100 V
VDS
400
200
0
0
16
8
4
VDD = 480 V
300 V
100 V
20
40
Gate Charge
0
60
VGS (V)
1
8V
Gate to Source Voltage
0.1
Static Drain to Source on State Resistance
RDS(on) (Ω)
Drain Current
ID (A)
PW = 10 μs
80
Qg (nC)
Page 3 of 6
RJK60S5DPK-M0
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
VGS = 0 V
Ta = 25°C
Pulse Test
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
20
15
10
5
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
VSD (V)
VGS = 10 V
5
ID = 10 mA
4
3
1 mA
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Drain to Source Breakdown Voltage
V(BR)DSS (V)
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
800
ID = 10 mA, VGS = 0
700
600
500
400
-25
0
25
50
75
Case Temperature
R07DS0245EJ0300 Rev.3.00
Feb 06, 2012
100 125 150
Tc (°C)
Page 4 of 6
RJK60S5DPK-M0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.65°C/W, Tc = 25°C
0.1
05
0.1 0.
2
0
.
0
PDM
D=
PW
T
0.01 1 shot pulse
0.01
10 μ
PW
T
100 μ
1m
10 m
Pulse Width
100 m
1
10
100
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10 Ω
10%
Vout
10%
10%
VDD
= 300 V
Vin
10 V
90%
td(on)
tr
Avalanche Test Circuit
VDS
Monitor
90%
td(off)
tf
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
100 Ω
Vin
0
R07DS0245EJ0300 Rev.3.00
Feb 06, 2012
VDD
Page 5 of 6
RJK60S5DPK-M0
Preliminary
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZH-A
Previous Code
TO-3PSG/TO-3PSGV
15.60 ± 0.2
13.60
MASS[Typ.]
3.7g
Unit: mm
4.80 ± 0.2
0.60 ± 0.2
φ3.2 ± 0.2
20.0 ± 0.2
2.0
2.4
0.50typ
18.70 ± 0.2
1.0
3.50
14.90 ± 0.1
3.8
Package Name
TO-3PSG
5.00 ± 0.3
Package Dimension
1.40
3-1.00 ± 0.2
5.45 ± 0.5
5.45 ± 0.5
0.60 ± 0.1
1.50 ± 0.2
2.825 ± 0.15
Ordering Information
Orderable Part Number
RJK60S5DPK-M0#T0
R07DS0245EJ0300 Rev.3.00
Feb 06, 2012
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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