RENESAS RJK2006DPJ_09

RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0512-0200
Rev.2.00
Nov 19, 2009
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L)
: PRSS0004AE-B
LDPAK(S)-(1)
4
: PRSS0004AE-C
LDPAK(S)-(2) )
D
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
2
1
3
2
3
S
3
RJK2006DPJ
RJK2006DPE
RJK2006DPF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 1 of 7
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
100
40
100
27
48.6
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
200
—
—
3.0
15
—
Typ
—
—
—
—
26
0.052
Max
—
1
±0.1
4.5
—
0.059
Unit
V
μA
μA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
1800
330
43
30
180
85
100
43
11
20
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
—
—
1.0
150
0.8
1.5
—
—
V
ns
μC
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 2 of 7
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 20 A
VGS = 10 V
RL = 5 Ω
Rg = 10 Ω
VDD = 160 V
VGS = 10 V
ID = 40 A
IF = 40 A, VGS = 0 Note4
IF = 40 A, VGS = 0
diF/dt = 100 A/μs
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
50
1000
7V
8V
PW
=
10
10
0
μs
Drain Current ID (A)
100
10
μs
Operation in this
area is limited by
RDS(on)
1
0.1
10
100
Ta = 25°C
Pulse Test
6V
30
20
5.5 V
10
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS(on) (Ω)
40
0
1000
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
−25°C
25°C
10
0
6.5V
VGS = 5 V
Tc = 25°C
1 shot
0.01
0.1
1
0
2
4
6
8
1
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
0.01
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
100
1000
0.20
VGS = 10 V
Pulse Test
0.16
ID = 40 A
0.12
20 A
0.08
10 A
0.04
0
-25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
10 V
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 3 of 7
1
10
Reverse Drain Current IDR (A)
100
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
Crss
10
0
VGS = 0
f = 1 MHz
50
100
Reverse Drain Current IDR (A)
VGS
VDD = 160 V
100 V
50 V
300
200 V
DS
100
20
40
0
60
80
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
20
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 4 of 7
12
4
VDD = 160 V
100 V
50 V
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
VGS = 0 V
Ta = 25 °C
Pulse Test
16
8
Gate Charge Qg (nC)
30
0
ID = 40 A
Ta = 25 °C
Drain to Source Voltage VDS (V)
50
40
400
0
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ta = 25°C
5
100
VDS = 10 V
4
3
ID = 10 mA
1 mA
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Gate to Source Voltage VGS (V)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
e
0.0 puls
t
ho
1s
0.01
10 μ
D=
PW
T
PW
T
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
V DD
= 100 V
Vout
10%
10%
90%
td(on)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 5 of 7
tr
10%
90%
td(off)
tf
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Package Dimensions
• RJK2006DPJ
JEITA Package Code
⎯
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
4.44 ± 0.2
(1.4)
Package Name
LDPAK(L)
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.4 ± 0.1
• RJK2006DPE
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
(1.5)
10.0
2.54 ± 0.5
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 6 of 7
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
RJK2006DPJ, RJK2006DPE, RJK2006DPF
• RJK2006DPF
JEITA Package Code
⎯
RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
(1.4)
4.44 ± 0.2
7.8
6.6
(2.3)
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
1.3 ± 0.15
10.0
(1.5)
8.6 ± 0.3
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part No.
RJK2006DPE-00-J3
Quantity
1000 pcs
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 7 of 7
Shipping Container
Taping
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2