CGH40035F 35 W, RF Power GaN HEMT Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package. Package Type : 440193 PN: CGH4003 5F FEATURES APPLICATIONS • Up to 4 GHz Operation • 2-Way Private Radio • 15 dB Small Signal Gain at 2.0 GHz • Broadband Amplifiers • 13 dB Small Signal Gain at 4.0 GHz • Cellular Infrastructure • 45 W typical PSAT • Test Instrumentation • 60 % Efficiency at PSAT • Class A, AB, Linear amplifiers suitable for • 28 V Operation 15 Rev 4.0 – May 20 OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Symbol Rating Units Conditions VDSS 84 Volts 25˚C 25˚C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 10.0 mA 25˚C Maximum Drain Current IDMAX 4.5 A 25˚C Soldering Temperature2 TS 245 ˚C 1 Screw Torque Thermal Resistance, Junction to Case3 Case Operating Temperature3,4 τ 80 in-oz RθJC 3.0 ˚C/W TC -40, +150 ˚C 85˚C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40035F at PDISS = 42 W. 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 10.8 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 500 mA Saturated Drain Current IDS 8.7 10.5 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 10.8 mA DC Characteristics1 RF Characteristics (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted) 2 Small Signal Gain GSS 13 14 – dB VDD = 28 V, IDQ = 500 mA Power Output3 PSAT 30 45 – W VDD = 28 V, IDQ = 500 mA η 50 60 – % VDD = 28 V, IDQ = 500 mA, PSAT VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 500 mA, POUT = 35 W CW Input Capacitance CGS – 14.7 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 4.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40035F-AMP 3 PSAT is defined as IG = 1.08 mA. 4 Drain Efficiency = POUT / PDC Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Simulated Small Signal Gain and Input Return Loss of CGH40035 Pagevs3Frequency Top the CGH40035F-AMP VDD = 28 V, IDQ = 500 mA PSAT, Gain, and Drain Efficiency vs Frequency of the Psat,CGH40035F Gain, and Drain vs Frequency of the inEfficiency the CGH40035F-AMP CGH40035F in the CGH40035-TB VDD V, IIDQDQ==500 500 V ==28 28 V, mAmA DD 50 80 75 PSAT 40 70 35 65 30 60 Efficiency 25 55 20 50 15 45 Psat 10 40 Gain 5 0 3.30 Gain 35 Drain Eff 3.35 3.40 Drain Efficiency (%) PSAT (W), Gain (dB) 45 3.45 3.50 3.55 3.60 3.65 30 3.70 Frequency (GHz) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance 16 80% 14 70% Gain 12 Gain 10 Gain (dB) 60% 50% Drain Efficiency 8 40% PAE 6 30% 4 PAE 20% 2 Efficiency 10% 0 Drain Efficiency, PAE (%) Swept CW Data of CGH40035 vs. Output Power with Source and Load Impedances Optimized for PSAT Power in CGH40035F-AMP VDD = 28 V, IDQ = 500 mA, Freq = 3.5 GHz 0% 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGH40035F Rev 4.0 K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH40035F VDD = 28 V, IDQ = 500 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Noise Performance Noise Resistance (Ohms) Minimum Noise Figure (dB) Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40035F VDD = 28 V, IDQ = 500 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 500 5.12 + j8.3 15.5 + j5.67 1000 2.97 + j1.38 11.29 + j7.27 6.6 + j5.56 1500 1.15 - j0.38 2500 0.91 - j5.13 6.17 - j0.4 3500 2.0 - j9.9 4.78 – j2.58 Note 1. VDD = 28V, IDQ = 500mA, in the 440193 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40035F Power Dissipation De-rating Curve CGH40035F CW Power Dissipation De-rating Curve 45 40 Power Dissipation (W) 35 30 25 20 Note 1 15 10 5 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40035F-AMP Demonstration Amplifier Circuit Schematic CGH40035F-AMP Demonstration Amplifier Circuit Outline Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGH40035F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, ≤5%, 5.1 OHMS 1 R2 RES, 1/16W, 0603, 1%, 100 OHMS 1 CAP, 470PF, 5%, 100V, 0603 3 C6,C13,C19 C16,C22 CAP, 33 UF, 20%, G CASE 2 C15,C21 CAP, 1.0UF, 100V, 10%, X7R, 1210 2 CAP 10UF 16V TANTALUM 1 C8 C1 CAP, 0.6pF, +/-0.05pF, 0603 1 C2 CAP, 1.2pF, +/-0.1pF, 0603 1 C10 CAP 4.7PF, +/- 0.25pF, ATC 100B 1 C4,C11,C17 C5,C12,C18,C30,C31 C7,C14,C20 J2,J3 J1 Q1 CAP, 7.5pF, +/-0.1pF, 0603 3 CAP, 47pF,+/-5%pF, 0603 5 CAP,33000PF, 0805,100V, X7R 3 CONN SMA STR PANEL JACK RECP 2 HEADER RT>PLZ .1CEN LK 9POS 1 PCB, RO4350B, Er = 3.48, h = 20 mil 1 CGH40035F 1 CGH40035F-AMP Demonstration Amplifier Circuit Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40035F (Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.921 -166.38 9.09 82.39 0.015 -1.84 0.555 -165.89 600 MHz 0.921 -169.49 7.57 78.16 0.015 -4.89 0.564 -166.40 700 MHz 0.922 -171.87 6.47 74.31 0.015 -7.54 0.574 -166.63 800 MHz 0.922 -173.79 5.65 70.73 0.015 -9.90 0.583 -166.74 900 MHz 0.923 -175.42 5.00 67.35 0.015 -12.05 0.593 -166.81 1.0 GHz 0.923 -176.84 4.49 64.12 0.014 -14.02 0.604 -166.89 1.1 GHz 0.924 -178.11 4.06 61.01 0.014 -15.84 0.614 -166.99 1.2 GHz 0.925 -179.29 3.71 58.01 0.014 -17.52 0.625 -167.14 1.3 GHz 0.925 179.62 3.41 55.10 0.014 -19.07 0.635 -167.34 1.4 GHz 0.926 178.57 3.16 52.28 0.014 -20.50 0.645 -167.59 1.5 GHz 0.927 177.57 2.94 49.54 0.014 -21.81 0.656 -167.90 1.6 GHz 0.927 176.59 2.75 46.86 0.013 -23.01 0.665 -168.25 1.7 GHz 0.928 175.62 2.58 44.26 0.013 -24.09 0.675 -168.65 1.8 GHz 0.928 174.67 2.43 41.71 0.013 -25.06 0.684 -169.08 1.9 GHz 0.928 173.72 2.30 39.21 0.013 -25.91 0.692 -169.56 2.0 GHz 0.929 172.76 2.19 36.77 0.013 -26.65 0.700 -170.07 2.1 GHz 0.929 171.80 2.09 34.37 0.012 -27.27 0.708 -170.61 2.2 GHz 0.929 170.83 2.00 32.01 0.012 -27.77 0.715 -171.18 2.3 GHz 0.928 169.84 1.92 29.69 0.012 -28.16 0.721 -171.77 2.4 GHz 0.928 168.83 1.85 27.40 0.012 -28.43 0.727 -172.38 2.5 GHz 0.928 167.80 1.78 25.14 0.012 -28.59 0.733 -173.02 2.6 GHz 0.927 166.74 1.73 22.89 0.012 -28.62 0.738 -173.67 2.7 GHz 0.926 165.64 1.68 20.66 0.012 -28.53 0.743 -174.33 2.8 GHz 0.925 164.51 1.63 18.45 0.012 -28.32 0.747 -175.02 2.9 GHz 0.924 163.34 1.59 16.24 0.012 -27.99 0.751 -175.72 3.0 GHz 0.923 162.12 1.56 14.03 0.012 -27.54 0.754 -176.43 3.2 GHz 0.919 159.52 1.51 9.58 0.012 -26.32 0.759 -177.91 3.4 GHz 0.914 156.66 1.48 5.07 0.012 -24.69 0.762 -179.44 3.6 GHz 0.908 153.49 1.46 0.42 0.012 -22.78 0.764 178.96 3.8 GHz 0.901 149.91 1.46 -4.42 0.013 -20.73 0.764 177.29 4.0 GHz 0.891 145.85 1.47 -9.52 0.014 -18.75 0.761 175.54 4.2 GHz 0.879 141.16 1.50 -14.99 0.015 -17.12 0.757 173.69 4.4 GHz 0.863 135.68 1.55 -20.92 0.017 -16.10 0.750 171.73 4.6 GHz 0.844 129.19 1.62 -27.45 0.020 -16.00 0.742 169.65 4.8 GHz 0.819 121.39 1.70 -34.74 0.023 -17.08 0.730 167.41 5.0 GHz 0.788 111.88 1.81 -42.97 0.027 -19.60 0.717 164.98 5.2 GHz 0.750 100.13 1.93 -52.34 0.032 -23.79 0.701 162.29 5.4 GHz 0.707 85.49 2.07 -63.07 0.039 -29.84 0.682 159.23 5.6 GHz 0.662 67.25 2.21 -75.29 0.046 -37.88 0.660 155.58 5.8 GHz 0.626 45.06 2.33 -89.03 0.054 -47.89 0.634 151.00 6.0 GHz 0.611 19.67 2.41 -104.14 0.063 -59.66 0.599 144.99 To download the s-parameters in s2p format, go to the CGH40035F Product Page and click on the documentation tab. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40035F (Small Signal, VDS = 28 V, IDQ = 500 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.933 -168.22 9.15 83.17 0.012 0.59 0.599 -170.98 600 MHz 0.933 -171.13 7.63 79.30 0.012 -1.75 0.604 -171.44 700 MHz 0.933 -173.38 6.54 75.79 0.012 -3.72 0.610 -171.69 800 MHz 0.933 -175.22 5.72 72.50 0.012 -5.44 0.615 -171.82 900 MHz 0.933 -176.78 5.09 69.38 0.012 -6.98 0.621 -171.89 1.0 GHz 0.933 -178.16 4.57 66.38 0.012 -8.36 0.628 -171.96 1.1 GHz 0.934 -179.40 4.16 63.48 0.012 -9.61 0.634 -172.02 1.2 GHz 0.934 179.45 3.81 60.66 0.012 -10.74 0.641 -172.11 1.3 GHz 0.934 178.38 3.52 57.92 0.011 -11.75 0.647 -172.22 1.4 GHz 0.934 177.35 3.26 55.24 0.011 -12.67 0.654 -172.37 1.5 GHz 0.934 176.35 3.05 52.61 0.011 -13.47 0.661 -172.55 1.6 GHz 0.934 175.38 2.86 50.04 0.011 -14.18 0.667 -172.77 1.7 GHz 0.934 174.43 2.70 47.51 0.011 -14.78 0.673 -173.03 1.8 GHz 0.933 173.48 2.55 45.02 0.011 -15.29 0.679 -173.32 1.9 GHz 0.933 172.54 2.43 42.58 0.011 -15.69 0.685 -173.64 2.0 GHz 0.933 171.59 2.32 40.16 0.011 -15.99 0.691 -174.00 2.1 GHz 0.932 170.63 2.22 37.78 0.011 -16.19 0.696 -174.39 2.2 GHz 0.932 169.66 2.13 35.43 0.011 -16.29 0.701 -174.80 2.3 GHz 0.931 168.67 2.05 33.10 0.011 -16.30 0.706 -175.25 2.4 GHz 0.930 167.66 1.98 30.79 0.011 -16.21 0.710 -175.71 2.5 GHz 0.929 166.62 1.92 28.49 0.011 -16.02 0.714 -176.21 2.6 GHz 0.928 165.56 1.86 26.21 0.011 -15.75 0.718 -176.72 2.7 GHz 0.927 164.46 1.81 23.93 0.011 -15.40 0.721 -177.26 2.8 GHz 0.925 163.32 1.77 21.66 0.011 -14.96 0.724 -177.82 2.9 GHz 0.924 162.14 1.73 19.38 0.011 -14.46 0.727 -178.40 3.0 GHz 0.922 160.90 1.70 17.09 0.011 -13.89 0.729 -179.00 3.2 GHz 0.917 158.28 1.65 12.48 0.012 -12.64 0.732 179.75 3.4 GHz 0.912 155.38 1.62 7.77 0.012 -11.30 0.733 178.42 3.6 GHz 0.905 152.15 1.61 2.90 0.013 -10.03 0.733 177.01 3.8 GHz 0.896 148.51 1.61 -2.18 0.014 -8.98 0.731 175.53 4.0 GHz 0.885 144.37 1.63 -7.56 0.016 -8.34 0.726 173.97 4.2 GHz 0.871 139.58 1.67 -13.32 0.018 -8.28 0.720 172.31 4.4 GHz 0.853 133.98 1.73 -19.56 0.020 -8.99 0.712 170.56 4.6 GHz 0.831 127.34 1.80 -26.43 0.023 -10.65 0.701 168.71 4.8 GHz 0.804 119.36 1.89 -34.07 0.027 -13.45 0.688 166.73 5.0 GHz 0.770 109.64 2.01 -42.66 0.032 -17.57 0.673 164.60 5.2 GHz 0.729 97.64 2.14 -52.39 0.038 -23.19 0.656 162.24 5.4 GHz 0.684 82.72 2.28 -63.43 0.045 -30.48 0.637 159.52 5.6 GHz 0.638 64.19 2.41 -75.89 0.052 -39.52 0.615 156.18 5.8 GHz 0.603 41.77 2.53 -89.77 0.061 -50.28 0.587 151.85 6.0 GHz 0.592 16.41 2.59 -104.90 0.069 -62.57 0.551 146.03 To download the s-parameters in s2p format, go to the CGH40035F Product Page and click on the documentation tab. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Package S-Parameters for CGH40035F (Small Signal, VDS = 28 V, IDQ = 750 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.938 -168.93 9.06 83.42 600 MHz 0.938 -171.77 7.56 79.69 0.011 1.67 0.616 -172.64 0.011 -0.35 0.620 -173.09 700 MHz 0.938 -173.96 6.49 800 MHz 0.938 -175.76 5.68 76.30 0.011 -2.03 0.625 -173.35 73.13 0.011 -3.46 0.629 900 MHz 0.938 -177.30 -173.51 5.05 70.10 0.011 -4.72 0.634 -173.61 1.0 GHz 0.938 1.1 GHz 0.938 -178.66 4.55 67.20 0.011 -5.83 0.639 -173.69 -179.89 4.14 64.38 0.011 -6.82 0.644 1.2 GHz -173.77 0.938 178.97 3.80 61.63 0.011 -7.70 0.649 -173.86 1.3 GHz 0.938 177.90 3.51 58.96 0.011 -8.47 0.655 -173.98 1.4 GHz 0.938 176.88 3.26 56.33 0.011 -9.15 0.660 -174.12 1.5 GHz 0.937 175.89 3.05 53.76 0.011 -9.72 0.665 -174.28 1.6 GHz 0.937 174.92 2.87 51.23 0.010 -10.21 0.671 -174.48 1.7 GHz 0.937 173.96 2.71 48.74 0.010 -10.60 0.676 -174.71 1.8 GHz 0.936 173.02 2.57 46.28 0.010 -10.89 0.681 -174.97 1.9 GHz 0.936 172.07 2.44 43.86 0.010 -11.10 0.685 -175.26 2.0 GHz 0.935 171.12 2.33 41.47 0.010 -11.22 0.690 -175.58 2.1 GHz 0.935 170.16 2.24 39.10 0.010 -11.24 0.694 -175.93 2.2 GHz 0.934 169.18 2.15 36.76 0.010 -11.19 0.699 -176.30 2.3 GHz 0.933 168.19 2.07 34.43 0.010 -11.05 0.702 -176.70 2.4 GHz 0.932 167.18 2.00 32.12 0.011 -10.83 0.706 -177.13 2.5 GHz 0.931 166.14 1.94 29.81 0.011 -10.54 0.709 -177.58 2.6 GHz 0.930 165.06 1.89 27.52 0.011 -10.18 0.712 -178.06 2.7 GHz 0.928 163.96 1.84 25.23 0.011 -9.76 0.715 -178.55 2.8 GHz 0.927 162.81 1.80 22.94 0.011 -9.28 0.717 -179.07 2.9 GHz 0.925 161.62 1.77 20.64 0.011 -8.77 0.719 -179.61 3.0 GHz 0.923 160.39 1.74 18.33 0.011 -8.23 0.720 179.83 3.2 GHz 0.918 157.74 1.69 13.65 0.012 -7.10 0.722 178.65 3.4 GHz 0.912 154.81 1.66 8.87 0.013 -6.03 0.723 177.40 3.6 GHz 0.904 151.56 1.65 3.92 0.014 -5.15 0.721 176.07 3.8 GHz 0.895 147.88 1.66 -1.26 0.015 -4.59 0.718 174.66 4.0 GHz 0.883 143.69 1.68 -6.74 0.017 -4.52 0.713 173.17 4.2 GHz 0.869 138.85 1.72 -12.62 0.019 -5.08 0.706 171.60 4.4 GHz 0.851 133.18 1.78 -19.00 0.022 -6.42 0.697 169.94 4.6 GHz 0.828 126.46 1.86 -26.01 0.025 -8.72 0.685 168.18 4.8 GHz 0.799 118.38 1.95 -33.80 0.029 -12.12 0.671 166.32 5.0 GHz 0.764 108.54 2.07 -42.55 0.034 -16.81 0.655 164.31 5.2 GHz 0.723 96.40 2.20 -52.44 0.040 -22.96 0.638 162.10 5.4 GHz 0.677 81.32 2.34 -63.62 0.047 -30.70 0.618 159.52 5.6 GHz 0.631 62.63 2.47 -76.21 0.055 -40.13 0.596 156.31 5.8 GHz 0.597 40.10 2.58 -90.17 0.063 -51.20 0.568 152.08 6.0 GHz 0.588 14.75 2.64 -105.34 0.071 -63.71 0.531 146.31 To download the s-parameters in s2p format, go to the CGH40035F Product Page and click on the documentation tab. Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGH40035F (Package Type — 440193) Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGH40035F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGH40035F-TB CGH40035F-AMP Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40035F Rev 4.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGH40035F Rev 4.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf