CMPA0060002D

CMPA0060002D
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier
Cree’s CMPA0060002D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon
or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and
wider bandwidths compared to Si and GaAs transistors. This
MMIC employs a distributed (traveling-wave) amplifier design
approach, enabling extremely wide bandwidths to be achieved
in a small footprint.
Typical Performance Over 0.5-6.0 GHz
Parameter
Gain
Saturated Output Power @ PIN 23 dBm
Power Gain @ PIN 23 dBm
PAE @ PIN 23 dBm
PN: CMPA00
6000
2D
(TC = 25˚C)
0.5 GHz
1.0 GHz
2.5 GHz
4.0 GHz
6.0 GHz
Units
18.7
17.4
17.6
17.4
17.6
dB
7.0
6.3
5.7
4.3
3.6
W
15.4
15.0
14.5
13.3
12.5
dB
43
40
36
28
31
%
Note: VDD = 28 V, ID = 100 mA
il 2012
Rev 1.1 – Apr
Features
Applications
• 17 dB Small Signal Gain
• Ultra Broadband Amplifiers
• 2 W Typical PSAT
• Fiber Drivers
• Operation up to 28 V
• Test Instrumentation
• High Breakdown Voltage
• EMC Amplifier Drivers
• High Temperature Operation
• Size 0.169 x 0.066 x 0.004 inches
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Units
Drain-source Voltage
VDSS
84
VDC
Gate-source Voltage
VGS
-10, +2
VDC
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
2
mA
Thermal Resistance, Junction to Case (packaged)1
RθJC
4.0
˚C/W
Note1 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuW carrier.
Electrical Characteristics (Frequency = 20 MHz to 6,000 MHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
V(GS)TH
-3.8
-3.0
-2.7
V
VGS(Q)
–
-2.7
–
VDC
IDS
–
1.94
–
A
Small Signal Gain3
S21
13.5
18
–
dB
VDD = 26 V, IDQ = 100 mA
Input Return Loss
S11
–
9
–
dB
VDD = 26 V, IDQ = 100 mA
Output Return Loss
S22
–
11
–
dB
VDD = 26 V, IDQ = 100 mA
Output Power4
POUT
2
4
–
W
VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
Power Added Efficiency
PAE
–
30
–
%
VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
GP
–
13.0
–
dB
VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
VSWR
–
–
5:1
Y
No damage at all phase angles,
VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
DC Characteristics
Gate Threshold Voltage1
Gate Quiescent Voltage
Saturated Drain Current
2
RF Characteristics
VDS = 20 V, ∆ID = 2 mA
VDD = 26 V, IDQ = 100 mA
VDS = 6.0 V, VGS = 2.0 V
5
Power Gain
Output Mismatch Stress
Notes:
1
The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure.
2
Scaled from PCM data.
3
The lowest test frequency is 1.0 GHz due to the lack of a low frequency termination.
4
Test frequencies 1.0, 2.5, and 4.0 GHz.
5
All data pulsed with Pulse Width = 10 μsec, Duty Cycle = 0.1%.
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Die Dimensions (units in microns)
Overall die size 4280 x 1670 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
Function
Description
Pad Size (microns)
1
RF IN1
RF-Input pad. Matched to 50 ohm. Requires gate control from
an external bias –T from -2.3 V to -3.8 V.
2
Gate Termination
Off Chip termination for the Gate. It needs to be DC-blocked .
200 x 150
3
Drain Termination
Off Chip termination for the Drain. It needs to be DC-blocked.
200 x 150
RF OUT1
RF-Output pad. Matched to 50 ohm. Requires Drain supply
from an external bias –T up to 26 V , 800 mA
200 x 150
4
200 x 150
Notes:
1
The RF In and Out pads have a ground-signal-ground configuration with a pitch of 1 mil (25 um)..
Die Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/wireless.
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
3
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Functional Block Diagram
This device employs a wideband, traveling wave amplifier topology. It has an internal termination for both
the Drain and the Gate, which works well over 2.5-6.0 GHz. For operation below 2.5 GHz an external termination is
required. This termination needs to be DC-blocked and suitable to withstand up to 3 W of RF power. (Refer to the
reference design section for the LF-termination in this data sheet for more details). The circuits also require external
wideband Bias –T’s to supply voltage to the Gate and Drain. The Bias-T at the Drain needs to be designed to handle 28
V and up to 800 mA.
Figure 1.
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
External Termination Reference Design
The following is a plot of the gain of the die only.
Die only
30
28
26
S21 (Die Only)
Gain (dB)
24
22
20
18
16
14
12
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Notes:
1
2
An off chip termination is needed to reduce the high gain peak at low frequencies.
The off chip termination should be designed to minimize the impact on the MMIC’s performance at higher
frequencies.
LRC Reference Circuit
The Drain and Gate circuit use the same L and C components but different values for the resistor.
Figure 2.
The Drain resistor needs to be dimensioned to handle 3 W of RF dissipation for the lowest frequencies while the Gate
resistor needs to handle 0.5 W. The suppliers of the SMT components are:
L1 = 47 nH, CoilCraft PN: 0402CS –47NXJB
C1 = 470 pf Murata PN: GRM1885C2A471A01D
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Typical Performance
Power Gain vs Frequency
VDD = 28 V, PIN = 23 dBm
Power Output vs Frequency
VDD = 28 V, PIN = 23 dBm
Power Output at 28V + 48V at PIN = 23 dBm
Power Gain at 28 + 48V at Pin = 23 dBm
50
20
48
18
46
44
16
42
Power Output (dBm)
12
10
\
8
6
Power Gain, 28V
40
38
36
34
32
30
28
26
4
Power Output, 28V
24
2
22
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
6.5
0.5
1.0
1.5
2.0
2.5
Power Added Efficiency vs Frequency 23 dBm
VDD = [email protected]
28V, PPIN
= 23 dBm
IN
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Gain and Return Losses vs Frequency
VDD = 28 V, IDQ = 100 mA
50
20
0
45
18
-2
16
-4
40
35
14
30
Gain (dB)
Power Added Efficiency (%)
3.0
Frequency (GHz)
Frequency (GHz)
25
20
S21_28V
S22_28V
-6
S11_28V
12
-8
10
-10
8
-12
6
-14
4
-16
2
-18
15
10
PAE, 28V
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
4.5
5.0
5.5
6.0
6.5
0
-20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Frequency (GHz)
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
6
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Input/Output Return Losses (dB)
Gain (dB)
14
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
7
CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless