CMPA601C025D 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA601C025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 6.0-12.0 GHz Parameter (TC = 25˚C) 6.0 GHz 8.0 GHz 10.0 GHz 12.0 GHz Units Small Signal Gain 40.0 42.0 43.0 36.0 dB POUT @ PIN = 19 dBm 48.0 49.0 47.4 47.3 dBm POUT @ PIN = 19 dBm 63.0 79.0 55.0 54.0 W Power Gain @ PIN = 19 dBm 29.0 30.0 28.4 27.3 dB PAE @ PIN = 19 dBm 33.0 49.0 35.0 32.0 % Note: All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%. Features Applications • • • • • 32 dB Small Signal Gain • 30 W Typical PSAT nuary 2015 Rev 1.0 – Ja • Operation up to 28 V • High Breakdown Voltage Jamming Amplifiers Test Equipment Amplifiers Broadband Amplifiers Radar Amplifiers • High Temperature Operation • Size 0.172 x 0.239 x 0.004 inches Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Symbol Rating Units Conditions Drain-source Voltage Parameter VDSS 84 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -55, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 15 mA 25˚C Maximum Drain Current1 IDMAX 0.6 A Stage 1, 25˚C Maximum Drain Current1 IDMAX 1.7 A Stage 2, 25˚C 1 Maximum Drain Current IDMAX 4.8 A Stage 3, 25˚C Thermal Resistance, Junction to Case (packaged) RθJC 0.83 ˚C/W 85˚C, PDISS = 92.8 W in 440213 package Thermal Resistance, Junction to Case (die only) RθJC 0.36 ˚C/W 85˚C, PDISS = 92.8 W TS 320 ˚C 30 seconds 2 Mounting Temperature (30 seconds) Note1 Current limit for long term, reliable operation Note2 Eutectic die attach using 80/20 AuSn mounted to a 10mil thick CuMo carrier. Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold VTH -3.8 -2.8 -2.3 V VDS = 10 V, ID = 23.2 mA Drain-Source Breakdown Voltage VBD 84 100 – V VGS = -8 V, ID = 23.2 mA Small Signal Gain @ 6 GHz S21 29.8 35 – dB VDD = 28 V, IDQ = 2.4 A, PIN = 10 dBm Small Signal Gain @ 10 GHz S21 30.2 35 – dB VDD = 28 V, IDQ = 2.4 A, PIN = 10 dBm Small Signal Gain @ 12 GHz S21 27.8 35 – dB VDD = 28 V, IDQ = 2.4 A, PIN = 10 dBm Power Output POUT 45.5 47 – W Power Added Efficiency @ 6 GHz PAE 23.0 30 – % VDD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Power Added Efficiency @ 10 GHz PAE 23.3 32 – % VDD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Power Added Efficiency @ 12 GHz PAE 23.7 31 – % VDD = 28 V, IDQ = 2.4 A, PIN = 19 dBm GP – 28 – dB VDD = 28 V, IDQ = 2.4 A, PIN = 19 dBm Input Return Loss S11 – -10 – dB VDD = 28 V, IDQ = 2.4 A Output Return Loss S22 – -8 – dB VDD = 28 V, IDQ = 2.4 A Y No damage at all phase angles, VDD = 28 V, IDQ = 2.4 A, POUT = 25W CW DC Characteristics RF Characteristics2 Power Gain Output Mismatch Stress VSWR – 5:1 – VDD = 28 V, IDQ = 2.4 A, PIN = 19 dBm, Frequency = 6.0, 10.0, 12.0 GHz Notes: 1 Scaled from PCM data. 2 All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 0.1%. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA601C025D Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Die Dimensions (units in microns) Overall die size 4380 x 6080 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function Description Pad Size (in) Note 1 RF IN RF-Input pad. Matched to 50 ohm. The DC impedance ~ 0 ohm due matching circuit. 150 x 200 4 2 VD1_A Drain supply for stage 1A. VD = 28 V. 150 x 150 1 3 VD1_B Drain supply for stage 1B. VD = 28 V. 150 x 150 1 4 VG1&2_A Gate control for stage 1&2A. VG = -2.0 to - 3.5 V. 150 x 150 1,2 5 VG1&2_B Gate control for stage 1&2B. VG = -2.0 to - 3.5 V. 150 x 150 1,2 6 VD2_A Drain supply for stage 2A. VD = 28 V. 129 x 129 1 7 VD2_B Drain supply for stage 2B. VD = 28 V. 129 x 129 1 8 VG3_A Gate control for stage 3A. VG = -2.0 to - 3.5 V. 129 x 129 1,3 9 VG3_B Gate control for stage 3B. VG = -2.0 to - 3.5 V. 129 x 129 1,3 10 VD3_A Drain supply for stage 3A. VD = 28 V. - 1 11 VD3_B Drain supply for stage 3B. VD = 28 V. - 1 12 RF-OUT RF-Output pad. Matched to 50 ohm. 150 x 200 4 Notes: 1 Attach bypass capacitor to pads 2-11 per application circuit. 2 VG1&2_A and VG1&2_B are connected internally so it would be enough to connect either one for proper operation. 3 VG3_A and VG3_B are connected internally so it would be enough to connect either one for proper operation. 4 The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 10 mil (250 um). The RF ground pads are 100 x 100 microns. Die Assembly Notes: • • • • • • • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/~/media/Files/Cree/RF/Application%20Notes/Appnote%202%20Eutectic.pdf Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA601C025D Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Block Diagram Showing Additional Capacitors for Operation Over 6.0 to 12.0 GHz C1 C3 C5 C12 VD C11 C2 C4 VG VD1_B VG1&2_B VD2_B VG3_B VD3_B RF_IN RF_OUT VD1_A C13 VG1&2_A VD2_A C7 C6 VG3_A VD3_A C9 C8 C10 C14 Designator Description Quantity C1,C2,C3,C4,C5,C6,C7,C8,C9,C10 CAP, 51pF, +/-10%, SINGLE LAYER, 0.030”, Er 3300, 100V, Ni/ Au TERMINATION 10 C11,C12,C13,C14 CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V, Ni/Au TERMINATION 4 Notes: 1 The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 2 The MMIC die and capacitors should be connected with 1 mil gold bond wires. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA601C025D Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Part Number System CMPA601C025D Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 6.0 GHz Upper Frequency1 12.0 GHz 25 W Bare Die - Power Output Package Table 1. Note : Alpha characters used in frequency 1 code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA601C025D Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA601C025D Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 Fax: +1.919.869.2733 www.cree.com/RF