CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. PN: CMPA0060 002F Package Type : 780019 Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units 19.9 18.8 17.8 16.8 16.8 17.5 18.5 16.5 dB Saturated Output Power, PSAT 4.3 4.1 4.5 4.2 3.7 3.9 4.8 3.7 W Power Gain @ PSAT1 14.7 13.1 12.6 12.2 12.6 10.9 12.2 9.5 dB 34 28 29 28 24 26 33 20 % Gain 1 PAE @ PSAT 1 Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA. Note2: VDD = 28 V, IDQ = 100 mA Features Applications • 17 dB Small Signal Gain • Ultra Broadband Amplifiers • 3 W Typical PSAT • Fiber Drivers • Operation up to 28 V • Test Instrumentation • High Breakdown Voltage • EMC Amplifier Drivers 15 Rev 3.0 – May 20 • High Temperature Operation • 0.5” x 0.5” total product size Figure 1. Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Symbol Rating Drain-source Voltage Parameter VDSS 84 Units VDC Gate-source Voltage VGS -10, +2 VDC Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4 mA Soldering Temperature TS 245 ˚C Screw Torque τ 40 in-oz RθJC 4.3 ˚C/W TC -40, +150 ˚C 1 Thermal Resistance, Junction to Case Case Operating Temperature2,3 Note: 1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 2 Measured for the CMPA0060002F at PDISS = 2 W. Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage1 V(GS)TH -3.8 -3.0 -2.7 V Gate Quiescent Voltage V(GS)Q – -2.7 – VDC Saturated Drain Current IDC – 1.4 – A VDS = 6.0 V, VGS = 2.0 V Small Signal Gain S21 13.5 17 21.5 dB VDD = 28 V, IDQ = 100 mA Input Return Loss S11 – -9 -5 dB VDD = 28 V, IDQ = 100 mA Output Return Loss S22 – -9 -5 dB VDD = 28 V, IDQ = 100 mA Power Output POUT 2 3 – W Power Added Efficiency PAE – 23 – % GP 10 – – dB VSWR – – 5:1 Y DC Characteristics VDS = 20 V, ∆ID = 2 mA VDD = 28 V, IDQ = 100 mA RF Characteristics Power Gain Output Mismatch Stress VDD = 28 V, IDQ = 100 mA, Frequency = 4.0 GHz, PIN = 23 dBm VDD = 28 V, IDQ = 100 mA, Frequency = 4.0 GHz, PIN = 23 dBm VDD = 28 V, IDQ = 100 mA, Frequency = 4.0 GHz, PIN = 23 dBm No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 23 dBm Notes: 1 The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure. Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Small Signal Gain and Return Losses vs Frequency at 28 V S21_28V 24 0 S21_28V S11_28V -2 S22_28V 20 -4 18 -6 16 -8 14 -10 12 -12 10 -14 8 -16 6 -18 4 -20 2 -22 0 Input/Ouput Return Loss (dB) Gain (dB) 22 -24 0 1 2 3 4 5 6 5.0 6.0 Frequency (GHz) Power Gain vs Frequency at 28V 20 18 16 Gain (dB) 14 12 10 8 6 Gain (Output Power = 34dBm, 28V) 4 Gain (Output Power = 33dBm, 28V) 2 0 0.0 1.0 2.0 3.0 4.0 Frequency (GHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Saturated Output Power Performance (PSAT) vs Frequency Psat_28V Frequency PSAT at 28V PSAT at 28V (GHz) (dBm) (W) 0.02 36.6 4.3 38.0 0.5 36.2 4.1 37.0 1.0 36.5 4.5 36.0 1.5 36.8 4.7 2.0 36.3 4.2 2.5 35.1 3.3 40.0 35.0 34.0 3.0 35.7 3.7 33.0 3.5 34.6 2.9 32.0 4.0 35.9 3.9 31.0 4.5 35.7 3.8 5.0 36.8 4.8 5.5 34.8 3.0 6.0 34.3 2.7 30.0 0.0 1.0 2.0 3.0 Frequency (GHz) 4.0 5.0 6.0 Note: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA. PAE at 33 & 34 dBm Output Power vs Frequency at 28 V PAE vs Freq. 28 V 30% 25% Power Added Efficiency (%) Saturated Output Power (dBm) 39.0 20% 15% 10% 5% PAE at 34dBm, 28V PAE at 33dBm, 28V 0% 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf General Device Information The CMPA0060002F is a GaN HEMT MMIC Distributed Driver Amplifier, which operates between 20 MHz - 6.0 GHz. The ampli- fier typically provides 17 dB of small signal gain and 2 W saturated output power with an associated power added efficiency of better than 20 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from appropriate Bias-T’s, through the RF input and output ports. The CMPA0060002F is provided in a flange package format. The input and output connections are gold plated to enable gold bond wire attach at the next level assembly. The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. The CMPA0060002F-AMP and the device were then measured using external Bias-T’s, (Aeroflex: 8800, SMF3-12; TECDIA: AMPT-06M20 or similar), as shown in Figure 2. The Bias-T’s were included in the calibration of the test system. All other losses associated with the test fixture are included in the measurements. VGG VDD RF Out RF In Output Bias T Input Bias T CMPA2560002F mounted CMPA0060002F in the test fixture Figure 2. Typical test system setup required for measuring CMPA0060002F-AMP Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA0060002F-TB Demonstration Amplifier Circuit CMPA0060002F-TB Demonstration Amplifier Circuit Outline Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CMPA0060002F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty J1,J2 CONNECTOR, SMA, AMP1052901-1 2 - PCB, TACONIC, RF-35-0100-CH/CH 1 CMPA0060002F 1 Q1 Notes 1 The CMPA0060002F is connected to the PCB with 2.0 mil Au bond wires. 2 An external bias T is required. Product Dimensions CMPA0060002F (Package Type — 780019) Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CMPA0060002F GaN MMIC Each Test board without GaN MMIC Each Test board with GaN MMIC installed Each CMPA0060002F-TB CMPA0060002F-AMP Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA0060002F Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA0060002F Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf