CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J 025D FEATURES APPLICATIONS • 17 dB Typ. Small Signal Gain at 10 GHz • Satellite Communications • 60% Typ. PAE at 10 GHz • PTP Communications Links • 25 W Typical Psat • Marine Radar • 40 V Operation • Pleasure Craft Radar • Up to 18GHz Operation • Port Vessel Traffic Services • Broadband Amplifiers • High Efficiency Amplifiers Packaging Information • • Bare die are shipped in Gel-Pak® containers or on tape. Non-adhesive tacky membrane immobilizes die during ust 2014 Rev 1.1 – Aug shipment. Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 100 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 4.8 mA 25˚C Maximum Drain Current1 IDMAX 2.0 A 25˚C Thermal Resistance, Junction to Case (packaged)2 RθJC 5.83 ˚C/W 85˚C Thermal Resistance, Junction to Case (die only) RθJC 3.91 ˚C/W 85˚C TS 320 ˚C 30 seconds 2 Mounting Temperature Note1 Current limit for long term reliable operation. Note2 Eutectic die attach using 0.5 mil thick 80/20 AuSn mounted to a 40 mil thick CMC carrier. Bottom of the CMC carrier fixed at 85°C and is at 19.2 W dissipated power. Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage V(GS)TH -3.8 -3.0 –2.3 V Gate Quiescent Voltage V(GS)Q – -2.7 – VDC Saturated Drain Current1 ISAT 3.8 4.3 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID = 4.8 mA On Resistance RON – 0.6 – Ω VDS = 0.1 V, VGS = 0 V VG-ON – 1.85 – V IGS = 4.8 mA Small Signal Gain GSS – 17 – dB VDD = 40 V, IDQ = 240 mA Saturated Power Output1 PSAT – 25 – W VDD = 40 V, IDQ = 240 mA η – 60 – % VDD = 40 V, IDQ = 240 mA IM3 – -30 – dBc VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 40 V, IDQ = 240 mA, POUT = 25 W CW Input Capacitance CGS – 5.1 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 1.2 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.16 – pF VDS = 40 V, Vgs = -8 V, f = 1 MHz DC Characteristics Gate Forward Voltage VDS = 10 V, ID = 4.8 mA VDD = 40 V, IDQ = 240 mA RF Characteristics Drain Efficiency2 Intermodulation Distortion Output Mismatch Stress VDD = 40 V, IDQ = 240 mA, POUT = 25 W PEP Dynamic Characteristics Notes: 1 Scaled from PCM unit cell. 1 PSAT is defined as IG = 0.48 mA. 2 Drain Efficiency = POUT / PDC Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV1J025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Die Dimensions (units in microns) Overall die size 800 x 1920 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Size (microns) Drain 200 x 100 Gate 200 x 100 Interconnect 80 x 80 Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at http://www.cree.com/products/wireless_documents.asp • • • • • • Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV1J025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Gmax and K Factor CGHV1J025D G40V4 4.8mm die; Vdd Vdd=40 =40 volts, Idq=120 Idq=120 mA K Factor G Max (dB) Figure 1. CGHV1J025D - Stability with Gmax and K Factor VDD = 40 V, IDS = 120 mA CGHV1J025D G40V4 4.8mm die; Vdd=40 Vdd=40 volts, Idq=240 Idq=240 mA Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV1J025D Rev 1.1 K Factor G Max (dB) Figure 2. CGHV1J025D - Stability with Gmax and K Factor VDD = 40 V, IDS = 240 mA Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Source and Load Impedances Frequency (GHz) Source Impedance (ohms) Load Impedance (ohms) Series Gate Stability Resistor (ohms) 1.0 8.1 + j10.8 31.4 + j24.75 7.00 2.0 3.9 + j5.43 17.6 + j23.4 3.30 3.0 2.35 + j3.48 9.57 + j19.67 2.05 4.0 1.81 + j2.49 6.52 + j16.94 1.40 5.0 1.47 + j1.67 4.22 + j14.57 0.95 6.0 1.36 + j1.365 3.73 + j12.4 0.70 7.0 1.377 + j0.97 3.06 + j10.82 0.525 8.0 1.32 + j0.6 2.47 + j9.6 0.425 9.0 1.16 + j0.32 2.22 + j8.53 0.275 10.0 0.957 + j0.07 2.1 + j7.67 0.175 11.0 1 + j0.01 1.94 + j6.96 0.10 12.0 0.548 + j0.01 1.87 + j6.186 0.025 13.0 76 +j0 1.6 + j5.63 0 14.0 0.69 – j0.34 1.4 + j5.1 0 15.0 0.437 – j0.78 1.22 + j4.68 0 16.0 0.44 – j0.99 1.07 + j4.25 0 17.0 0.416 – j1.23 0.97 + j3.81 0 18.0 0.45 – j1.434 0.87 + j3.47 0 Table 1. Note: VDD = 40 V, IDQ = 178 mA. Figure 3. CGHV1J025D - Power Gain, Output Power and Drain Efficiency using Source and Load Pull Impedances (Series gate stability resistor values chosen to make K>1) Power Gain (dB), Output Power (W), Drain Efficiency (%) 70 60 50 Power Gain, dB 40 Output Power, Watts Drain Efficiency, % 30 20 10 0 1 2 3 4 5 6 7 8 9 10 11 Frequency (GHz) 12 13 14 15 Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV1J025D Rev 1.1 16 17 18 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical S-Parameters for CGHV1J025D (Small Signal, VDS = 40 V, IDQ = 120 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.928 -124.66 23.24 109.88 0.020 20.43 0.360 -95.71 1.00 GHz 0.918 -150.14 12.40 91.05 0.021 2.17 0.361 -115.87 1.50 GHz 0.919 -159.38 8.19 80.38 0.021 -7.95 0.408 -122.40 2.00 GHz 0.922 -164.05 5.98 72.24 0.020 -15.53 0.466 -126.33 2.50 GHz 0.927 -166.89 4.61 65.39 0.020 -21.82 0.524 -129.70 3.00 GHz 0.932 -168.83 3.68 59.40 0.019 -27.25 0.579 -132.87 3.50 GHz 0.937 -170.28 3.01 54.08 0.018 -32.00 0.628 -135.88 4.00 GHz 0.942 -171.43 2.51 49.32 0.017 -36.21 0.671 -138.72 4.50 GHz 0.946 -172.38 2.12 45.03 0.016 -39.94 0.708 -141.37 5.00 GHz 0.950 -173.20 1.82 41.14 0.015 -43.26 0.741 -143.82 5.50 GHz 0.954 -173.92 1.57 37.61 0.014 -46.22 0.769 -146.08 6.00 GHz 0.957 -174.57 1.37 34.39 0.013 -48.87 0.793 -148.15 6.50 GHz 0.960 -175.16 1.20 31.45 0.013 -51.25 0.814 -150.06 7.00 GHz 0.962 -175.70 1.07 28.73 0.012 -53.39 0.832 -151.80 7.50 GHz 0.965 -176.19 0.95 26.23 0.011 -55.32 0.847 -153.41 8.00 GHz 0.966 -176.66 0.85 23.91 0.011 -57.07 0.861 -154.89 8.50 GHz 0.968 -177.10 0.77 21.74 0.010 -58.65 0.873 -156.25 9.00 GHz 0.970 -177.51 0.70 19.72 0.010 -60.09 0.883 -157.51 9.50 GHz 0.971 -177.90 0.63 17.83 0.009 -61.40 0.892 -158.68 10.00 GHz 0.972 -178.27 0.58 16.04 0.009 -62.59 0.900 -159.77 10.50 GHz 0.973 -178.63 0.53 14.36 0.008 -63.68 0.907 -160.78 11.00 GHz 0.974 -178.97 0.49 12.76 0.008 -64.67 0.914 -161.72 11.50 GHz 0.975 -179.30 0.45 11.25 0.008 -65.58 0.919 -162.61 12.00 GHz 0.976 -179.61 0.42 9.80 0.007 -66.42 0.924 -163.44 12.50 GHz 0.976 -179.92 0.39 8.42 0.007 -67.18 0.929 -164.22 13.00 GHz 0.977 179.78 0.36 7.10 0.007 -67.87 0.933 -164.96 13.50 GHz 0.977 179.49 0.34 5.83 0.006 -68.51 0.937 -165.65 14.00 GHz 0.978 179.21 0.32 4.61 0.006 -69.08 0.940 -166.31 14.50 GHz 0.978 178.93 0.30 3.44 0.006 -69.60 0.943 -166.94 15.00 GHz 0.979 178.66 0.28 2.30 0.006 -70.07 0.946 -167.53 15.25 GHz 0.979 178.53 0.27 1.75 0.005 -70.29 0.947 -167.82 15.50 GHz 0.979 178.40 0.26 1.20 0.005 -70.49 0.948 -168.10 15.75 GHz 0.979 178.26 0.26 0.67 0.005 -70.68 0.949 -168.37 16.00 GHz 0.979 178.13 0.25 0.14 0.005 -70.86 0.951 -168.64 16.25 GHz 0.979 178.00 0.24 -0.38 0.005 -71.03 0.952 -168.90 16.50 GHz 0.980 177.88 0.24 -0.89 0.005 -71.19 0.953 -169.16 16.75 GHz 0.980 177.75 0.23 -1.40 0.005 -71.33 0.954 -169.41 17.00 GHz 0.980 177.62 0.22 -1.89 0.005 -71.46 0.955 -169.65 17.25 GHz 0.980 177.50 0.22 -2.39 0.004 -71.58 0.955 -169.89 17.50 GHz 0.980 177.37 0.21 -2.87 0.004 -71.69 0.956 -170.13 17.75 GHz 0.980 177.25 0.21 -3.35 0.004 -71.78 0.957 -170.36 18.00 GHz 0.980 177.13 0.20 -3.82 0.004 -71.87 0.958 -170.58 To download the s-parameters in s2p format, go to the CGHV1J025D Product Page and click on the documentation tab. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV1J025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical S-Parameters for CGHV1J025D (Small Signal, VDS = 40 V, IDQ = 240 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 500 MHz 0.936 -131.40 24.37 107.30 0.017 17.88 0.330 -112.72 1.00 GHz 0.928 -154.25 12.80 90.22 0.017 1.38 0.350 -128.83 1.50 GHz 0.929 -162.37 8.46 80.49 0.017 -7.76 0.396 -132.36 2.00 GHz 0.932 -166.47 6.19 72.98 0.017 -14.68 0.450 -134.10 2.50 GHz 0.935 -168.95 4.80 66.58 0.016 -20.49 0.504 -135.82 3.00 GHz 0.939 -170.65 3.85 60.92 0.015 -25.56 0.556 -137.73 3.50 GHz 0.943 -171.91 3.17 55.83 0.015 -30.06 0.603 -139.77 4.00 GHz 0.947 -172.91 2.65 51.23 0.014 -34.07 0.646 -141.86 4.50 GHz 0.950 -173.73 2.25 47.04 0.013 -37.67 0.684 -143.92 5.00 GHz 0.954 -174.45 1.93 43.22 0.013 -40.89 0.717 -145.91 5.50 GHz 0.957 -175.07 1.68 39.72 0.012 -43.79 0.746 -147.80 6.00 GHz 0.959 -175.64 1.47 36.51 0.011 -46.40 0.771 -149.58 6.50 GHz 0.962 -176.15 1.30 33.55 0.011 -48.75 0.793 -151.25 7.00 GHz 0.964 -176.63 1.15 30.82 0.010 -50.87 0.812 -152.81 7.50 GHz 0.966 -177.07 1.03 28.29 0.010 -52.79 0.829 -154.26 8.00 GHz 0.968 -177.48 0.92 25.93 0.009 -54.53 0.844 -155.62 8.50 GHz 0.969 -177.87 0.83 23.73 0.009 -56.11 0.857 -156.88 9.00 GHz 0.970 -178.25 0.76 21.67 0.008 -57.54 0.868 -158.05 9.50 GHz 0.972 -178.60 0.69 19.74 0.008 -58.84 0.878 -159.15 10.00 GHz 0.973 -178.94 0.63 17.91 0.008 -60.02 0.887 -160.17 10.50 GHz 0.974 -179.27 0.58 16.19 0.007 -61.10 0.895 -161.13 11.00 GHz 0.975 -179.58 0.54 14.55 0.007 -62.07 0.902 -162.04 11.50 GHz 0.975 -179.88 0.49 13.00 0.007 -62.96 0.909 -162.88 12.00 GHz 0.976 179.82 0.46 11.52 0.006 -63.76 0.914 -163.68 12.50 GHz 0.977 179.54 0.43 10.10 0.006 -64.49 0.919 -164.43 13.00 GHz 0.977 179.26 0.40 8.74 0.006 -65.14 0.924 -165.15 13.50 GHz 0.978 178.99 0.37 7.44 0.005 -65.72 0.928 -165.82 14.00 GHz 0.978 178.72 0.35 6.19 0.005 -66.24 0.932 -166.46 14.50 GHz 0.978 178.46 0.33 4.98 0.005 -66.70 0.936 -167.07 15.00 GHz 0.979 178.20 0.31 3.82 0.005 -67.09 0.939 -167.65 15.25 GHz 0.979 178.08 0.30 3.25 0.005 -67.26 0.940 -167.93 15.50 GHz 0.979 177.95 0.29 2.69 0.004 -67.42 0.942 -168.21 15.75 GHz 0.979 177.82 0.28 2.15 0.004 -67.57 0.943 -168.47 16.00 GHz 0.979 177.70 0.28 1.60 0.004 -67.69 0.944 -168.74 16.25 GHz 0.980 177.58 0.27 1.07 0.004 -67.81 0.945 -168.99 16.50 GHz 0.980 177.45 0.26 0.55 0.004 -67.90 0.947 -169.24 16.75 GHz 0.980 177.33 0.25 0.03 0.004 -67.99 0.948 -169.49 17.00 GHz 0.980 177.21 0.25 -0.48 0.004 -68.05 0.949 -169.73 17.25 GHz 0.980 177.09 0.24 -0.98 0.004 -68.10 0.950 -169.97 17.50 GHz 0.980 176.97 0.23 -1.48 0.004 -68.14 0.951 -170.20 17.75 GHz 0.980 176.85 0.23 -1.97 0.004 -68.15 0.952 -170.43 18.00 GHz 0.980 176.73 0.22 -2.45 0.003 -68.15 0.953 -170.65 To download the s-parameters in s2p format, go to the CGHV1J025D Product Page and click on the documentation tab. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV1J025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV1J025D Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage HEMT Product Line Parameter Value Units Lower Frequency DC GHz Upper Frequency 18.0 GHz 25 W Bare Die - 1 Power Output Package Table 1. Note : Alpha characters used in frequency 1 code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CGHV1J025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Cree, Marketing, RF Components 1.919.407.7816 Tom Dekker Cree, Sales Director, RF Components 1.919.313.5639 Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CGHV1J025D Rev 1.1 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf