Cree C3D02060F Silicon Carbide Schottky Diode - Z-Rec

C3D02060F
VRRM = Silicon Carbide Schottky Diode
IF (TC=128˚C) = 2 A
Z-Rec™ Rectifier (Full-Pak)
Qc = Features
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600 V
4.8 nC
Package
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Fully Isolated Case
TO-220-F2
Benefits
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PIN 1
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
No Additional Isolation Required
Applications
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CASE
PIN 2
Part Number
Package
Marking
C3D02060F
TO-220-F2
C3D02060
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 150W-300W
Motor Drives
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
Continuous Forward Current
4
2
1.8
A
TC=25˚C
TC=128˚C
TC=135˚C
IFRM
Repetitive Peak Forward Surge Current
12
8
A
TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3
TC=110˚C, tP = 10 ms, Half Sine Wave, D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
20
16
A
TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3
TC=110˚C, tp = 10 mS, Half Sine Wave, D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
65
A
TC=25˚C, tP = 10 µs, Pulse
Ptot
Power Dissipation
10.8
4.7
W
TC=25˚C
TC=110˚C
-55 to
+175
˚C
1
8.8
Nm
lbf-in
IF
TJ , Tstg
Operating Junction and Storage Temperature
TO-220 Mounting Torque
1
Value
C3D02060F Rev. D
M3 Screw
6-32 Screw
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
1.8
1.7
2.4
V
IF = 2 A TJ=25°C
IF = 2 A TJ=175°C
IR
Reverse Current
10
20
50
100
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QC
Total Capacitive Charge
4.8
nC
VR = 600 V, IF = 2A
di/dt = 500 A/μs
TJ = 25°C
C
Total Capacitance
120
12
11
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Typ.
Unit
Thermal Resistance from Junction to Case
13.8
°C/W
Typical Performance
4.0
4.0
66
IF Forward Current (A)
IF Forward Current (A)
3.0
3.0
25°C
75°C
125°C
175°C
55
2.5
2.5
D1_25C
D1_75C
2.0
2.0
D1_125C
D1_175C
1.5
1.5
1.0
1.0
IR Reverse Current (uA)
TJ =
TJ =
TJ =
TJ =
IR Reverse Current (μA)
3.5
3.5
44
Current(A)
D2_75C
33
D2_125C
D2_175C
22
TJ = 25°C
TJ = 75°C
TJ = 125°C
11
TJ = 175°C
0.5
0.5
0.0
0
0.0
0.0
00
0.5
0.5
1.0
1.0
1.5
1.5
2.0
2.0
2.5
2.5
V Forward Voltage (V)
F
VF Forward
Voltage (V)
Figure 1. Forward Characteristics
2
C3D02060F Rev. D
3.0
3.0
0
0
100
100
200
200
300
300
400
400
500
500
600
600
700
700
(V) (V)
R Reverse Voltage
VR VReverse
Voltage
Figure 2. Reverse Characteristics
800
800
900
900
Typical Performance
C3D02060F Current Derating
D3_2A_FP
10
10
60
60
50
50
88
20%
30%
50%
70%
DC
66
55
Duty*
Duty*
Duty*
Duty*
C Capacitance (pF)
77
44
C Capacitance (pF)
F(PEAK)
(A)(A)
Forward Current
Peak
I Peak
Forward
Current
IF(PEAK)
99
40
40
30
30
D3_2A_FP
20
20
33
22
10
10
11
00
25
25
50
50
75
75
100
100
125
125
TCC Case
Case Temperature
Temperature (°(°°C)C)
T
150
150
00
175
175
1
1
10
10
100
100
1000
1000
VR Reverse
VR Reverse
Voltage(V)
(V)
Voltage
* Frequency > 1KHz
Figure 3. Current Derating
Figure 4. Capacitance vs. Reverse Voltage
1E1
Zth (°C/W)
1E0
E-1
E-2
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
Time (s)
Figure 5. Transient Thermal Impedance
3
C3D02060F Rev. D
1E1
1E2 1E3
Typical Performance
15
15.0
Power Dissipation (W)
Power Dissipation (W)
12
12.0
9
9.0
6
6.0
3
3.0
0
0.0
25
25
50
50
75
75
100
100
125
125
150
150
175
175
Case Temperature(°(°C)
TC CaseTcTemperature
C) Figure 6. Power Derating
Package Dimensions
Package TO-220-F2
E
A
F
POS
B
G
C
H
P
L
S
D
T
M
N
PIN 1
PIN 2
4
C3D02060F Rev. D
CASE
Inches
Millimeters
Min
Max
Min
A
.177
.193
4.5
Max
4.9
B
.092
.108
2.34
2.74
6.9
C
.248
.272
6.3
D
.098
.114
2.5
2.9
E
.390
.406
9.9
10.3
3.4
F
.118
.134
3.0
G
.122
.137
3.1
3.5
H
.617
.633
15.67
16.07
L
.039
.055
1.0
1.4
M
.016
.031
0.4
0.8
N
.185
.217
4.7
5.5
P
0
.154
0
3.9
S
.476
.508
12.1
12.9
T
.016
.031
0.4
0.8
NOTE:
1. Dimension L, M, T apply for Solder Dip
Finish
Recommended Solder Pad Layout
TO-220-F2
Part Number
Package
Marking
C3D02060F
TO-220-F2
C3D02060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
Diode Model
VfT = VT + If * RT
RT = 0.21 + (T j *1.71*10 −3 )
VT = 0.98 + (T j * −1.7 *10 −3 )
Note: Tj = Diode Junction Temperature In Degrees Celsius
5
C3D02060F Rev. D
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
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C3D02060F Rev. D
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power