CGHV60075D 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS • 18 dB Typical Small Signal Gain at 4 GHz • 2-Way Private Radio • 17 dB Typical Small Signal Gain at 6 GHz • Broadband Amplifiers • 65% Typical Power Added Efficiency at 4 GHz • Cellular Infrastructure • 60% Typical Power Added Efficiency at 6 GHz • Test Instrumentation • 75 W Typical PSAT • Class A, AB, Linear amplifiers suitable • 50 V Operation for OFDM, W-CDMA, EDGE, CDMA • High Breakdown Voltage waveforms • Up to 6 GHz Operation Packaging Information • Bare die are shipped on tape or in Gel-Pak® containers. • Non-adhesive tacky membrane immobilizes die during ember 2014 Rev 0.0 – Dec shipment. Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 150 VDC 25˚C Gate-source Voltage VGS -10, +2 VDC 25˚C Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C Maximum Drain Current1 IMAX 6.3 A 25˚C Maximum Forward Gate Current IGMAX 10 mA 25˚C Thermal Resistance, Junction to Case (packaged)2 RθJC 2.67 ˚C/W 85˚C, 41.6W Dissipation Thermal Resistance, Junction to Case (die only) RθJC 1.66 ˚C/W 85˚C, 41.6W Dissipation TS 320 ˚C 30 seconds Operating Junction Temperature Mounting Temperature Note Current limit for long term reliable operation. Note2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier. 1 Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions VP -3.8 -3.0 –2.3 V VDS = 10 V, ID = 10 mA Drain Current1 IDSS 8 10 – A VDS = 6 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 150 – – V VGS = -8 V, ID = 10 mA On Resistance RON – 0.28 – Ω VDS = 0.1 V VG-ON – 1.9 – V IGS = 10 mA Small Signal Gain GSS – 17 – dB VDD = 50 V, IDQ = 125 mA Saturated Power Output2,3 PSAT – 75 – W VDD = 50 V, IDQ = 125 mA η – 60 – % VDD = 50 V, IDQ = 125 mA, PSAT = 75 W IM3 – -30 – dBc VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 50 V, IDQ = 125 mA POUT = 75 W CW Input Capacitance CGS – 14.1 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 3.2 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.3 – pF VDS = 50 V, Vgs = -8 V, f = 1 MHz DC Characteristics Gate Pinch-Off Voltage Gate Forward Voltage RF Characteristics Drain Efficiency3 Intermodulation Distortion Output Mismatch Stress VDD = 50 V, IDQ = 125 mA, POUT = 75 W PEP Dynamic Characteristics Notes: 1 Scaled from PCM data 2 PSAT is defined as IG = 1.0 mA. 3 Drain Efficiency = POUT / PDC Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV60075D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf DIE Dimensions (units in microns) Overall die size 3000 x 820 (+0/-50) microns, die thickness 100 microns. All Gate and Drain pads must be wire bonded for electrical connection. Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at www.cree.com/wireless. • Vacuum collet is the preferred method of pick-up. • The backside of the die is the Source (ground) contact. • Die back side gold plating is 5 microns thick minimum. • Thermosonic ball or wedge bonding are the preferred connection methods. • Gold wire must be used for connections. • Use the die label (XX-YY) for correct orientation. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV60075D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - CGHV60075D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25°C VDD = 50V, IDQ = 125 mA, Frequency = 2.7 GHz Figure 2. - CGHV60075D GMAX and K Factor vs. Frequency at Tcase = 25°C VDD = 50V, IDQ = 125 mA Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV60075D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Die S-Parameters (Small Signal, VDS = 50 V, IDQ = 125 mA, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.5 0.93309 -154.44 14.266 88.053 0.014402 -0.85181 0.35448 -119.95 0.6 0.93352 -158.34 11.838 83.444 0.01433 -5.2391 0.3779 -122.32 0.7 0.93452 -161.14 10.06 79.434 0.014195 -9.0268 0.40373 -124.1 0.8 0.93586 -163.24 8.7019 75.832 0.014019 -12.407 0.43075 -125.62 0.9 0.93743 -164.87 7.6297 72.531 0.013813 -15.485 0.45814 -127.01 1 0.93917 -166.17 6.761 69.468 0.013583 -18.326 0.48532 -128.36 -129.69 1.1 0.94101 -167.24 6.0431 66.6 0.013336 -20.972 0.51193 1.2 0.94292 -168.13 5.4398 63.9 0.013076 -23.449 0.5377 -131 1.3 0.94485 -168.89 4.926 61.348 0.012806 -25.779 0.56247 -132.31 1.4 0.9468 -169.55 4.4834 58.931 0.01253 -27.974 0.58611 -133.6 1.5 0.94872 -170.12 4.0987 56.635 0.012249 -30.047 0.60859 -134.86 1.6 0.95062 -170.64 3.7616 54.451 0.011966 -32.007 0.62986 -136.11 1.7 0.95247 -171.1 3.4641 52.373 0.011683 -33.861 0.64994 -137.32 1.8 0.95426 -171.51 3.2003 50.392 0.011401 -35.619 0.66885 -138.51 1.9 0.956 -171.89 2.9648 48.503 0.011122 -37.283 0.68662 -139.66 -140.77 2 0.95767 -172.24 2.7539 46.699 0.010846 -38.863 0.70331 2.1 0.95926 -172.56 2.5641 44.976 0.010574 -40.36 0.71895 -141.85 2.2 0.96079 -172.86 2.3927 43.33 0.010307 -41.781 0.73359 -142.89 2.3 0.96225 -173.14 2.2375 41.754 0.010045 -43.13 0.74731 -143.9 2.4 0.96364 -173.41 2.0963 40.247 0.0097893 -44.411 0.76014 -144.87 2.5 0.96496 -173.65 1.9677 38.802 0.0095396 -45.629 0.77216 -145.8 2.6 0.96621 -173.89 1.8502 37.416 0.0092961 -46.787 0.78341 -146.7 2.7 0.9674 -174.11 1.7425 36.087 0.0090588 -47.888 0.79393 -147.57 2.8 0.96853 -174.32 1.6437 34.811 0.0088279 -48.935 0.80379 -148.4 2.9 0.96959 -174.52 1.5528 33.584 0.0086033 -49.933 0.81303 -149.2 3 0.9706 -174.71 1.4689 32.404 0.0083851 -50.882 0.82169 -149.97 3.2 0.97246 -175.07 1.3198 30.177 0.0079668 -52.647 0.83741 -151.43 3.4 0.97412 -175.4 1.1918 28.105 0.0075724 -54.252 0.85128 -152.78 3.6 0.97561 -175.71 1.081 26.175 0.0072005 -55.712 0.86354 -154.03 3.8 0.97695 -175.99 0.98461 24.373 0.0068495 -57.041 0.87439 -155.19 4 0.97815 -176.26 0.90032 22.681 0.0065185 -58.254 0.88404 -156.27 4.2 0.97923 -176.5 0.82619 21.091 0.0062057 -59.361 0.89265 -157.28 4.4 0.9802 -176.74 0.76072 19.592 0.0059099 -60.372 0.90034 -158.21 4.6 0.98108 -176.96 0.70262 18.175 0.0056299 -61.295 0.90725 -159.09 4.8 0.98187 -177.17 0.65085 16.832 0.0053644 -62.137 0.91345 -159.91 5 0.98259 -177.36 0.60454 15.558 0.0051122 -62.903 0.91905 -160.68 5.2 0.98324 -177.55 0.56297 14.343 0.0048724 -63.603 0.92411 -161.41 5.4 0.98383 -177.73 0.52552 13.185 0.0046441 -64.237 0.9287 -162.09 5.6 0.98437 -177.91 0.49168 12.078 0.0044262 -64.81 0.93287 -162.73 5.8 0.98487 -178.07 0.46099 11.017 0.0042182 -65.327 0.93667 -163.34 6 0.98532 -178.23 0.4331 9.9987 0.0040191 -65.79 0.94015 -163.92 To download the s-parameters in s2p format, go to the CGHV60075D Product Page and click the documentation tab. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV60075D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV60075D Die Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units Upper Frequency 6.0 GHz Power Output 75 W Bare Die - 1 Package Table 1. Note : Alpha characters used in frequency 1 code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV60075D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/rf Sarah Miller Cree, Marketing & Export, RF Components 1.919.407.5302 Ryan Baker Cree, Marketing, RF Components 1.919.407.7816 Tom Dekker Cree, Sales Director, RF Components 1.919.407.5639 Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV60075D Rev 0.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf