C4D15120A VRRM = 1200 V Silicon Carbide Schottky Diode IF (TC=135˚C) = 20 A Z-Rec Rectifier ® Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • • • • = 77.5 nC TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C4D15120A TO-220-2 C4D15120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 41 20 15 A TC=25˚C TC=135˚C TC=150˚C IFRM Repetitive Peak Forward Surge Current 68 44 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 100 85 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 900 750 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Ptot Power Dissipation 192 83 W TC=25˚C TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C4D15120A Rev. B M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.6 2.3 1.8 3 V IF = 15 A TJ=25°C IF = 15 A TJ=175°C IR Reverse Current 35 120 200 300 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 77.5 nC VR = 800 V, IF = 15A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 1200 70 50 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz 1. Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.78 Max. Unit Test Conditions Note °C/W Typical Performance 2 30 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 25 1.8 1.6 1.4 IR (mA) IF (A) 20 15 10 1.2 1 0.8 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 0.6 0.4 5 0.2 0 0 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 1. Forward Characteristics 2 C4D15120A Rev. B 3.5 4 200 400 600 800 1000 1200 1400 VR (V) Figure 2. Reverse Characteristics 1600 1800 Typical Performance 200 140 180 120 IF(peak) (A) 100 80 160 Duty Duty Duty Duty Duty 140 PTot (W) 10% 20% 30% 50% 70% DC 60 120 100 80 60 40 40 20 20 0 0 25 50 75 100 125 150 175 25 50 75 TC ˚C 100 125 150 175 TC ˚C Figure 4. Power Derating Figure 3. Current Derating 1400 90 80 1200 70 1000 50 C (pF) Qrr (nC) 60 40 30 800 600 400 20 200 10 0 0 0 200 400 600 800 0.1 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D15120A Rev. B 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 40 40.0 1000 1000 35 35.0 EC Capacitive Energy (uJ) C 30 30.0 (A) IFSMIFSM (A) E (mJ) 25 25.0 20 20.0 15 15.0 100 100 TJ = 25°C TJ = 110°C 10.0 10 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Thermal Resistance 1 0.5 0.3 100E-3 0.1 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D15120A Rev. B 100E-3 1 Package Dimensions Package TO-220-2 A P F J C Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 D B D X S E Y G T Z U H W N F A B C G D E H F J G L H M J N L M P N Q P S Q V L M Max C P OS Q T U V S T U V W W PIN 1 PIN 2 X X Y Y z CASE Millimeters Min E 1 2 Inches POS Z Inc hes .100 .120M illim eters 2.540 M in M ax M in M ax .223 .337 5.664 .395 .410 10.033 10.414 .590 .615 14.986 .235 .255 5.969 6.477 .143 .102 .337 1.105 .590 .500 .149 R 1.127 .025 .530 .112 R 0.010 .045 .028 .195 .036 .045 .055 .165 .195 .205 .048 .180 .170 .0483° .153 2.591 .337 1.147 8.560 .610 14.986 .550 .153 3.785 0.197 1.147 28.626 .550 .036 13.462 .054 3.632 2.845 3°3° .395 .385 5.5°3° .410 .410 10.033 5° 3° 10.414 9.779 3.302 .150 3.810 3.302 Part Number Package Marking C4D15120A TO-220-2 C4D15120 TO-220-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C4D15120A Rev. B 4.699 1.372 6° 2.794 .635 5.5° 10.414 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout 5.207 6° 5° 3° 5° 3° 5° 2.388 2.794 .356 .533 .150 1.397 6° 6° 3° 5° 3° 6° 5° 3° .110 .110 2.54 .021 .025 .356 5° 3.886 3° 1.371 3°3° 3° 3° 3° .094 .100 .014 .014 .130 .130 5° 8.560 15.621 8.560 28.067 29.134 15.494 12.700 13.970 3.886 R 0.197 29.134 .635 .914 13.970 .055 R 0.254 1.143 .711 .914 .205 4.953 1.143 1.397 .185 4.191 4.953 5.207 .054 1.219 4.318 4.572 6°1.219 3.048 Diode Model Diode Model CSD04060 Vf T = V T + If*R Vf = VT T T + If * RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VT = 0.97 + (Tj * -2.12*10-3) RT = 0.031 + (Tj * 3.92*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D15120A Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power