Cree C3D03060E Silicon Carbide Schottky Diode - Z

C3D03060E
VRRM = Silicon Carbide Schottky Diode
600 V
IF (TC=135˚C) = 5.5 A
Z-Rec™ Rectifier
Qc Features
Package
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TO-252-2
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
= 6.7 nC
Benefits
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Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
Applications
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CASE
PIN 2
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 300W-450W
Part Number
Package
Marking
C3D03060E
TO-252-2
C3D03060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
Continuous Forward Current
11.5
5.5
A
TC=25˚C
TC=135˚C
TC=160˚C
18
13.5
A
TC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
IF
3
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
26
23
A
TC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
100
A
TC=25˚C, tP=10 µS, Pulse
Ptot
Power Dissipation
53
23
W
TC=25˚C
TC=110˚C
-55 to
+175
˚C
TJ , Tstg
1
Value
Operating Junction and Storage Temperature
C3D03060E Rev. B
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
1.7
2.4
V
IF = 3 A TJ=25°C
IF = 3 A TJ=175°C
50
100
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
VF
Forward Voltage
IR
Reverse Current
10
20
QC
Total Capacitive Charge
6.7
nC
VR = 600 V, IF = 3A
di/dt = 500 A/μS
TJ = 25°C
C
Total Capacitance
155
13
12
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Note
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
TO-252 Package Thermal Resistance from Junction to Case
Typ.
Unit
2.8
°C/W
Typical Performance
14
1.4E-05
6.06.0
Reverse Current (A)
12
1.2E-05
4.04.0
Forward Current
IF Forward Current (A)
25°C
75°C
125°C
175°C
3.03.0
2.02.0
TJ = 25°C
TJ = 75°C
2.0E-062
TJ = 175°
8.0E-068
Current 25C
Current 25C
Current 75C
6.0E-066
Current 125C
Current 125
Current 175C
4.0E-064
1.01.0
00.0
0.0 0.0
Current 75C
TJ = 125°C
0.0E+000
0.5 0.5
1.0 1.0
1.5 2.0 2.5 3.0 1.5
2.0
2.5
3.0
VF Forward Voltage (V)
Forward Voltage
Figure 1. Forward Characteristics
2
1.0E-05
10
IR Reverse Current (μA)
TJ =
TJ =
TJ =
TJ =
5.05.0
C3D03060E Rev. B
00 100 200 300 400 500 600 700 800 100
200
300
400
500
600
700
800
VR Reverse Voltage (V)
Reverse Bias (V)
Figure 2. Reverse Characteristics
Current 175
Capacitance
Typical Performance
C3D03060A Current Derating
80
30
30
80
70
70
60
60
20
20
20%
30%
50%
70%
DC
15
15
Duty*
Duty*
Duty*
Duty*
10
10
C Capacitance (pF)
Capacitance (pF)
(A)
Current
Forward
Peak
IF(PEAK)
IF(PEAK)
Peak
Forward
Current
(A)
25
25
50
50
40
40
30
30
20
20
5
5
0
0
25
25
10
10
0
0
50 75 100 125 150 175
50
75
100
125
150
175
1
1
Case Temperature (°°(
C)°C)
TC CaseTCTemperature
Reverse Voltage
Figure 3. Current Derating
Zth (°C/W)
Figure 4. Capacitance vs. Reverse Voltage
Time (s)
Figure 5. Transient Thermal Impedance
C3D03060E Rev. B
100
10
100
V Reverse Voltage (V)
R
* Frequency > 1KHz
3
10
1000
1000
Typical Performance
70.0
70
Power Dissipation (W)
Power Dissipation (W)
60
60.0
50
50.0
40
40.0
30
30.0
20
20.0
10
10.0
0.00
25 50 75 100 125 150 175 25
50
75
100
125
150
175
TcTemperature
Case Temperature(°
(°C)
TC Case
C) Figure 6. Power Derating
Package Dimensions
Package TO-252-2
*
POS
Inches
Millimeters
Min
Max
Min
Max
A
.250
.289
6.350
7.341
B
.197
.215
5.004
5.461
C
.027
.050
.686
1.270
D*
.270
.322
6.858
8.179
E
.178
.182
4.521
4.623
F
.025
.045
.635
1.143
G
44˚
46˚
44˚
46˚
H
.380
.410
9.652
10.414
J
.090 TYP
2.286 TYP
K
6˚
8˚
6˚
8˚
L
.086
.094
2.184
2.388
M
.018
.034
.457
.864
N
.035
.050
.889
1.270
P
.231
.246
5.867
6.248
Q
0.00
.005
0.00
.127
R
R0.010 TYP
.017
.023
.432
.584
T
.038
.045
.965
1.143
U
.021
.029
.533
.737
Note:
* Tab “D” may not be present
4
C3D03060E Rev. B
R0.254 TYP
S
Recommended Solder Pad Layout
.08
TO-252-2
Part Number
Package
Marking
C3D03060E
TO-252-2
C3D03060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
Diode Model
Diode Model CSD04060
Vf VT ==VTV++If*R
If*RT
T
T
T
-3
VT==0.965
+ (Tj **-1.3*10
) -3)
V
1.01+(T
-1.26*10
T
J
-3
RT==0.096
+ (Tj **1.06*10
) -3)
R
0.14+(T
1.13*10
T
J
Note: Tj = Diode Junction Temperature In Degrees Celsius
VT
5
C3D03060E Rev. B
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D03060E Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power